MRF544 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Silicon NPN, high Frequency, high breakdown Transistor
- Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High F T - 1400 MHz RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Vdc BVCBO Collector-Base Breakdown Voltage (IC= 100 µ Adc, IE=0) 100 Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 100 µ Adc, IC = 0) 3.0 - Vdc ICBO Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) µ A ICES Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) 1.0 100 µ A (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) 2.5 pF CIB Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) 6.1 pF fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 250 MHz) 1000 1500 MHz
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.