MRF433 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
MOTOROLA SC (XSTRS/R F) 4BE D Ml 6367254 OO94bb2 b MEMOTE MOTOROLA = S3-O7 m SEMICONDUCTOR So = TECHNICAL DATA MRF433 The RF Line 2 | 12.5 W (PEP) ~ 30 MHz SILICON RF POWER TRANSISTORS Thangtetrn designed primarily for application as complementary symmetry amplifiers in linear amplifiers from 2.0 to 30 MHz. NPN SILICON © Specified 12.5 Volt, 30 MHz Characterisites — Output Power = 12.5 W (PEP) Minimum Gain = 20dB Efficiency = 50% 4 intermodulation Distortion @ 12.5 W (PEP) ~ IMD = -30 dB (Max) - a gore. oe teen ' om ALS oe fo ya MAXIMUM RATINGS. s “ /y° [Ratig Symbian ni] Nv [Satecoreminwrvoinwe | Veco] 8 | ee | [Galetorate Voltage Veg | 36 Vee] |g roe [Gotector Current = Gonsinwaws | ie [28 Age] | po Femaer = [Tn Tee Derate above 25°C wee versus ano TLERANENG AR cs wees | oo s U 3? 10.990 | 0800 case 211.07 A A MOTOROLA RF DEVICE DATA 2-640
MOTOROLA SC (XSTRS/R F) WEE D MM 6367254 0094663 & MMOTE ELECTRICAL CHARACTERISTICS :T¢ = 25°C uniess otherwise noted.) (characterise TT Syembot Tin [tye [max [unit ) T-33-07 OFF CHARACTERISTICS Collector Emitter Breakdown Voltage Vae (ig = 20 made, Ig = 0) Collector Emitter Breakdown Voltage Vee lig = 10 made, Vag = 0} Emitter Base Breakdown Voltage ViaRIEsO Vae (ie + 20 made. ic + 0) Collector Cura Currant Tees made (ee * 15 Vide. Vag = 0. Te = 55°C! Collector Cutol Current ‘cao (Veg = 15 Vde. te = 0 (ON CHARACTERISTICS DE Current Gain lic = 05 Ade, Voe = $0 Vac) DYNAMIC CHARACTERISTICS (Output Capacitance (Veg * 15 Vde. ig = 0.1 = 1. 0MHe) FUNCTIONAL TESTS [Gommar-Emitter Amplifier Power Gaint?? (ec = 12.5 Vide. Pout = 12.5 W (PEP), 'ca'* 100 mage, 1» 20:30.001 MH) Calrector EMficwncy a (ec * 12.5 Ve, Pout > 12.5 W (PEP) 112) Taiermodvlation Distortion!) (Vee = 125 Vée, Pour = 12.5 W (PEP), log = 100 made, f= 30, 20.001 MH2) Series Equivalent Inout impedance ‘Ohms (Voc * 12.5 Ve, Pout = 12.50 (PEP) ca = 100 made, {= 30,30.001 MHz) Series Equivalent Output Impedance 480-300 (ec * 125 Vide, Pout * 12.5 (PEP), lca = 100 mage, #= 30, 30,001 MHz) (Class AB . (2iClass A (3) To Mil-St-1311 Version A, Test Mothod 22048, Two Tone, Referonce each Tone FIGURE 1 — 30 MHz TEST CIRCUIT SCHEMATIC 2 us Bint * +125V a0 ’ 7 thes des it nS crz 7 us wack RCP co gRe ben gas rs ca + Dur. —— nr ce a @) Co ontbut RFS input See Ss 2 w €1,¢2.64 170-780 pF. ARCO 469 2 1092. 5 Ware 13 10H Moldes choke 63 -25-2800F, ARCO A64 RaRA 1S, 1/4 Wore LA 15 Turns, #24 AWG Enamaiea Wire, ©5,C8 S00uF,2V.ELECTROLYTIC ASRS 102. 1/4 Watt Clowewound on » 100 2, 1 Watt 7.69 0. uE, Oise Ceramic cAicr2 —1Naoo1 Carbon Resistor ce 1000 oF Oise Ceramic Li 3 Turns, #18 AWG, 1/4" 1.0, 3/16" Long LS FERROXCUBE VK200 - 20/48, a 1002, 1/2 ware MOTOROLA RF DEVICE DATA 2-641