MRF421 MACOM | Alldatasheet
Document overview
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Technical content
/C0078 /C0078 /C0083 Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40%
- Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (Min)
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstand Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 290 1.66 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.6 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) V(BR)CES 45 — — Vdc Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) V(BR)CBO 45 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) ICES — — 10 mAdc (continued)
100 W (PEP), 30 MHz
CASE 211–11, STYLE 1 Order this document by MRF 421/DSEMICONDUCTOR TECHNICA L D ATA REV 1
- To proposed EIA method of measurement. Reference peak envelope power.
Figure 1. 30 MHz Test Circuit Schematic L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
Figure 8. Output Capacitance versus Frequency Figure 9. Output Resistance versus Frequency Specifications subject to change without notice. Visit www.macom.com for additional data sheets and product information.