MRF401 MOTOROLA | Alldatasheet
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25 W PEP — 30 MHz :
NPN SILICON RF POWER TRANSISTORS NPN SILICON ...designed primarily for applications as a high-power linear amplifier from 2.0 to 75 MHz. © Specified 28 Volt, 30 MHz Characteristics — 2) / Output Power = 25 W (PEP) ¥, Minimum Gain = 13 dB x, Efficiency = 40% vy) © Intermodulation Distortion at 25 W (PEP) IMD = -32 dB (Max) © Isothermal-Resistor Design Results in Rugged Device OO f a ji b/d BazNA st c SEATING PLANE — WRENCH FLAT ay “Ts awa [.| \\ « MAXIMUM RATINGS <== [ating Symbot YT Vewwe [Unit | SY ZI to [cores Enit Votuye | veg “30 | vee] eee | Emiter-Bave Voltage | Mego | 80 |e | ® | couector Gurrent—Continuous | ic | | Ade | Total Device Dissipation @ Tc = 25°C(1) 50 Watts See EMITTER Derate above 25°C 28.6 wit 2. BASE ER rT Lona ea ees| ments tee sapere oo [e-}a792 [oor }as7o-| 0.790" (1) These devices are designed for RF operation. The total device dissipation ratin {1.78} applies only when the devices are operated ax class Bor CRF amplifiers ose | ae Foon | HOOT | fot 140 | 78 008s [0070 [m[—ssenom | 45° NOM a ene CR] 7a] 780 | 0798-0307 | fs aor tse oust one] [rar] 264 [oes | 0.100 (uae [-335 [ones [0.132 | 1450-09 3-7
ELECTRICAL CHARACTERISTICS (T, 25°C unless otherwise noted.) [cee | sem | wm |e | ee | om] Bi Collector-Emitter Breakdown Voltage BYcEO Vde & (ig = 50 mAde, Ig = 0) lig = 1.0 Ade, Vee = 5.0 Vde) (Vcp = 30 Vde, le = 0, f = 1.0MHz) (Pout = 25 Watts PEP, Ic (max) = 1.12 Ade, Vcc = 28 Vde, (Pout = 25 Watts PEP, Ic (max) = 1.12 Ade, Voc = 28 Vde, f = 30 MHz) Intermodulation Distortion -32 dB FIGURE 1 — 30 MHz LINEAR TEST CIRCUIT. RECT 28 Vde Input 7 = oT ~ cc CRI - - TT I re ove ct a => r o % os ce 1.0 BF 36 V Tantes RFC2 — 3-Ferroxcube 5653065-3B crt 1Na997 RI — 10 2 1/2 Watt 10% 3-8
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