MRF393 MACOM | Alldatasheet

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Technical content

/C0078/C0080/C0078 /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0080/C0117/C0115/C0104/C0045/C0080/C0117/C0108/C0108 /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

  • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55% (Typ)
  • Built–In Input Impedance Matching Networks for Broadband Operation
  • Push–Pull Configuration Reduces Even Numbered Harmonics
  • Gold Metallization System for High Reliability
  • 100% Tested for Load Mismatch 1, 45, 8 The MRF393 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push–pull configuration. PUSH–PULL TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 16 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.65 °C/W NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull amplifier. /C0077/C0082/C0070/C0051/C0057/C0051

100 W, 30 to 500 MHz

CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON CASE 744A–01, STYLE 1 Order this document by MRF 393/DSEMICONDUCTOR TECHNICA L D ATA REV 7

  1. Each transistor chip measured separately.
  2. Both transistor chips operating in push–pull amplifier.

Figure 1. 500 MHz Test Fixture Board Material — 1 oz. Copper Clad both sides.

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage Figure 6. Series Equivalent Input/Output Impedance Figure 7. Class AB Output Power versus

400 MHz

500 MHz

225 MHz

NOTE: and collector–to–collector respectively. ZOL * = given output power, voltage and frequency.

CASE 744A–01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. STYLE 1: PIN 1. EMITTER (COMMON) 2. COLLECTOR 3. COLLECTOR 4. EMITTER (COMMON) 5. EMITTER (COMMON) 6. BASE 7. BASE 8. EMITTER (COMMON) –T– M K K L G F V Q 4 PL 2 PL U 4 PL D 4 PL R 56 78 12 34 –B– MAM0.76 (0.030) B M –A– SEATING PLANE N E C J H DIM MIN MAX MIN MAX INCHES MILLIMETERS A 22.60 23.11 0.890 0.910 B 9.52 10.03 0.375 0.395 C 6.65 7.16 0.262 0.282 D 1.60 1.95 0.063 0.077 E 2.94 3.40 0.116 0.134 F 2.87 3.22 0.113 0.127 G 16.51 BSC 0.650 BSC H 4.01 4.36 0.158 0.172 J 0.07 0.15 0.003 0.006 K 4.34 4.90 0.171 0.193 L 12.45 12.95 0.490 0.510 M 45 NOM 45 NOM N 1.051 11.02 0.414 0.434 Q 3.04 3.35 0.120 0.132 R 9.90 10.41 0.390 0.410 U 1.02 1.27 0.040 0.050 V 0.64 0.89 0.025 0.035 /C0095/C0095 Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 7