MRF373 MOTOROLA | Alldatasheet

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Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. MRF373 MRF373SMOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA The RF MOSFET Line /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

  • Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50%
  • Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc
  • Excellent Thermal Stability
  • 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,

60 Watts CW

Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc Drain Current – Continuous ID 7 Adc Total Device Dissipation @ TC = 25°C MRF373S Derate above 25°C PD 173 1.33 W W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case MRF373S R qJC 0.75 °C/W Thermal Resistance, Junction to Case MRF373 R qJC 1 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF373/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 2000

60 W, 470 – 860 MHz, 28 V

LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS CASE 360B–03, STYLE 1 (MRF373) CASE 360C–03, STYLE 1 (MRF373S) /C0077/C0082/C0070/C0051/C0055/C0051 /C0077/C0082/C0070/C0051/C0055/C0051/C0083 G D S REV 4

MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID =1 mA) V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS – – 1 mAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS – – 1 mAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 200 mA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 3 4 5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) – 0.6 0.8 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 2.2 2.9 – S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C iss – 79 – pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C oss – 46 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C rss – 4 – pF FUNCTIONAL CHARACTERISTICS, CW Operation Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) G ps 13 14.7 – dB Drain Efficiency (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) h 50 54 – % Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz, Load VSWR at 5:1 at All Phase Angles) y No Degradation in Output Power TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) G ps – 11.2 – dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) h – 40 – % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) IMD – –30 – dBc

Figure 7. Power Gain versus Output Power Figure 8. Performance in Narrowband Circuit Figure 9. Capacitance versus Voltage

14 Gp, POWER GAIN (dB)

Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A)

Figure 10. MRF373S Broadband Push–Pull Component Layout

Table 2. MRF373S Broadband Push–Pull Application Parts List

Figure 11. Intermodulation Distortion versus Output Figure 12. Broadband Power Gain versus Output Figure 13. Efficiency versus Output Power

470 MHz

660 MHz

860 MHz

MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA NOTES

MRF373 MRF373SMOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA NOTES

MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA PACKAGE DIMENSIONS CASE 360B–03 ISSUE D (MRF373) CASE 360C–03 ISSUE B (MRF373S) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A MIN MAX MIN MAX MILLIMETERS 0.370 0.390 9.40 9.91 INCHES B 0.220 0.240 5.59 6.09 C 0.105 0.155 2.67 3.94 D 0.205 0.225 5.21 5.71 E 0.035 0.045 0.89 1.14 F 0.004 0.006 0.11 0.15 H 0.057 1.45 K 0.085 0.115 2.16 2.92 N 0.350 0.370 8.89 9.39 K D E H N F C SEATING PLANE –B– –A– –T– 0.067 1.70 G K D EH N F C SEATING PLANE DIM A MIN MAX MIN MAX MILLIMETERS 0.790 0.810 20.07 20.57 INCHES B 0.220 0.240 5.59 6.09 C 0.125 0.175 3.18 4.45 D 0.205 0.225 5.21 5.71 E 0.050 0.070 1.27 1.77 F 0.004 0.006 0.11 0.15 G 0.562 BSC 14.27 BSC H 0.077 0.087 1.96 2.21 K 0.215 0.255 5.47 6.47 N 0.350 0.370 8.89 9.39 Q 0.120 0.140 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Q 2 PL MAM0.25 (0.010) B MT –B– –A– –T– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030” AWAY FROM EDGE OF FLANGE. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Motorola Japan Ltd.; SPS, T echnical Information Center, 3–20–1, Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. – http://sps.motorola.com/mfax/ 852–26668334 HOME PAGE : http://motorola.com/sps/ MRF373/D