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Microsemiconductor, Inc. Specifications are subject to change without notice. Aerospace Mgmt. Sys. Cert. AS/EN/JISQ9100:2009 Rev. C ISO9001:2008 Cert No. 45325 133 Kings Road, Madison, New Jersey 07940 United States of America Tel. Fax. www.americanmicrosemi.com Document Page of 3Revised
Description
a silicon NPN epitaxial planar transistor designed for RF power amplifiers on VHF band mobile radio
applications
The AMERICAN MICROSEMICONDUCTOR MRF342 is designed for VHF amplifier applications operating to 150 Mhz PACKAGE STYLE TO-220AB 1 = Base 2 = Emitter 3 = Collector 4 = Emitter MAXIMUM RATINGS IC 3.0 A VCEO 35 V VCBO 65 V VEBO 4.0 V PDISS 55 W @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C θJC 3.2 °C/W
Microsemiconductor, Inc. Specifications are subject to change without notice. Aerospace Mgmt. Sys. Cert. AS/EN/JISQ9100:2009 Rev. C ISO9001:2008 Cert No. 45325 133 Kings Road, Madison, New Jersey 07940 United States of America Tel. Fax. www.americanmicrosemi.com Document Page of Revised *EMC GREEN molding compound is Halogen-‐Free. **For Lead Free plating, add suffix “LEAD FREE” to part number. For Tin/Lead plating, add suffix “TIN/LEAD” to part number. No suffix designation allows for the supply of either lead-‐free or tin/lead plated product depending on availability.