MRF331 MOTOROLA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

84 DEBese7esy oovasze &

6367254 MOTOROLA SC (XSTRS/R F) 89D 78932 D |

T- 73-07 . MOTOROLA m= SEMICONDUCTOR SEE = . TECHNICAL DATA | The RF Line | 10 W — 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NEN SILICON « . designea primarily for wideband large-signal driver and predriver amplifier stages in the 100-500 MHz frequency range. @ Guaranteed Performance at 400 MHz and 28 Vde Output Power = 10 Watts Minimum Gain = 8 dB Efficiency = 55% © 100% Tested for Load Mismatch at All Phase Angles With 30:1 VSWR: @ Broadband Version of MRF321 © Gold Metallization System for High Reliability © Controlled Wirebonding Gives High Input Impedance © See EB74 for Broadband Circuit Details Ge LEM ——e en ' MAXIMUM RATINGS PE ae [rang symtot [vate [un | sen TSH [cotstrane vow | ~vego | so | vee _| [emiverSowvorwe | ven | 40 | vee | STAY eaten ‘Total Device Dissipation @ Ta = 26°C (11 27 ‘Watts Derate above 25°C 160 mec [Ree Tenseawe fiom | tay Lesrenseol °o | (a a] 5 ae eae fel THERMAL CHARACTERISTICS HECHT siete [characteriie Hebi tiaseat eae Tal Resitanes Junction to coe @ EP itisar| | Pe seach eal only when the devices are opersted as RF ampliirs Pe Gar ae ‘ (2) Thermal Resistance is determined under specified RF operating conditions by infrared ea Fey 9ee1 sere ‘ Treourement eclguet ering coon yi abuser Etta) cata sat MOTOROLA RF DEVICE DATA 3-422

Fy DE Ppezezess 0078933 4 Tt

6367254 MOTOROLA SC (XSTRS/R F) 89D 78933 07-33-69

i I ELECTRICAL CHARACTERISTICS (T¢ = 25°C unless otherwise noted) | OO | OFF CHARACTERISTICS Gollector-Emitter Breakdown Voltege vee {ig * 20 mAde, Ip =0) Collector Emitter Breakdown Vonage vae i= 20 made, Vee =O) Collector-Baze Breakdown Voltane Vianicao Vee lig= 20 mAde, Ig = 0) TEmitter-Base Breakdown Volione Vae lg 2.0 mAde, tc = 0) Caector Guiowt Current (Vee = 30 Va, te = 0} ‘ON CHARACTERISTICS DE Current Gain {ig 500 made, Voe = 6.0 Vase) DYNAMIC CHARACTERISTICS ‘Gutput Capacitance (oa = 28 Vie, Ie = 0,f = 1.0 MH) FUNCTIONAL TESTS ‘Common-Emitter Amplifier Power Gain (Voc = 28 Ve, Pour = 10, f= 400 MH} Toliestor EMficiency og = 28 Vae, Pou * 10, f= 400 Miz) Toad Mismatch ° ‘No Degradation ia Power Output (Wee = 28 Ve, Pout = 10W, f= 400 Miz, VSWR = 30:1 all phase angles! FIGURE 1 — 400 MHz TEST CIRCUIT = Oo "28 vse ! | cro ct | if i Cay BF ut ; ton “QO ee Gur3u4 i a 2 cok hee | Log fos cr | - ' 1, C2, C8 ~ 1.0-20 pF Johanson Trimmer (JMCBBO1) Ls ~ vK.200-19/48 : 3, C4'~ 60 pF Chip Capacitor Ua = 4 Turns #20 Enamel, 1/8" 1D 8,610 — 0.4 uF Erie Redcap 21 ~ Microstrip 0.1” WX 1.98" L 63 7 O85 10 BF tehanson Trimmer aMesz0r) 22 ~ Meron 0.1" W X O88" L 11 ~ 1.0uF 80.V Tantalum ° peoetauamen Board ~ Glass Tation ¢, = 2.66, t= 0.062" (1, L2 ~ 0.16 nH Molded Choke with Ferrite Beas fnven/Oetous Connecnors = Tvs 6 (Ferroxcube 66-500.08/48) ‘Transistor Unoor Test MOTOROLA RF DEVICE DATA 3-423 a

89 De Bese7esy oo7eqay o

6367254 MOTOROLA SC (XSTRS/R F) 83D 78934 07-33-09 |

FIGURE 2— POWER GAIN versus FREQUENCY FIGURE 3 — OUTPUT POWER venus INPUT POWER a | Ty yy Tec wo eLpem TA Te TT a tERET TPP TTT] & Pye YOY TT 3 wt Atte rf | = ST ane oe e LET RAAT PTT 3 uy yy y e, | | TT RET TT os HHA ee | x a Os 3 WIT VIA a | wel TTT Prey |) o3,uetaA yr rT ty a HWeI7T 7 Ty | | veces | atl [ | Ty Tt tT wl VY YT | | | ty Tf a a a a a | neque te sa. tror owen a FIGURE 4.— OUTPUT POWER vers SUPPLY VOLTAGE "TTT yy yy a wt TT Preston] Se a DD er a a 3 | oe a 3a er] TT Tr a a a a F Veo Suc VOLTAGE VOLT) ¢ . - oe : Sg over a i ~ FF i \\ ee % aN LVR © . / i : sees eet Be | po ent eee GO ek - cee a MOTOROLA RF DEVICE DATA 3-424

84 DE Be3e7254 0078435 2 i

6367254 MOTOROLA SC C(XSTRS/R F) 83D 78935 OT-33-0F

. MRF331 FIGURE 6 ~ SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCE A TES, x seit wena gestara = TE AER iss eae FASE see TRON NS xk Fey IO0 Miz 4 Hanne soveyyeeecel > ° C roe Sten nctirMnie ran reared iris aes R Ly SENS SO ee ee eg Hee OOK 2 UY BESTS po eattta erences Ys PY $C ESSA Pd HERR Ne EN SN POAT | a | me Oe PRR OK EA ACE MHz | Ohms Ohms % Z LAL ERK SEXO teeth 100 | 75-125 | 360-i76 PY ty SOAS 100 MHz‘s kt ij Hy REESE tae .14]20 | 120-131 TTR STEEL HR 4o0 | 1.34335 | 16.0-j175 i RR gc ceanermt 500 | 1.74353 | 14.5-j20.0 TARE SE *ZOL = Conjugate of the optimum load impedance | LL LAR RRS SH ; into which the device output operates at a | : ie FEROS malt jut por, vag and requney. i MOTOROLA RF DEVICE DATA 3-425