MRF313 MACOM | Alldatasheet
Document overview
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Technical content
/C0078 /C0078 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ
- Emitter Ballast and Low Current Density for Improved MTBF
- Common Emitter for Improved Stability MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 6.1 Watts mW/ °C Storage Temperature Range Tstg –65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 28.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 35 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 35 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc Collector Cutoff Current (VCE = 20 Vdc, IB = 0) ICEO — — 1.0 mAdc (continued) /C0077/C0082
1.0 W, 400 MHz
HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 305A–01, STYLE 1 Order this document by MRF 313/DSEMICONDUCTOR TECHNICA L D ATA
Figure 1. 400 MHz Power Gain Test Circuit
CASE 305A–01 ISSUE A /C0051 !! /C0052 $/C0052 M K F D C H J A /C0072 /C0051 /C0052 /C0051/C0051 /C0052 /C0070 /C0051 /C0052 /C0072/C0052 /C0055 /C0051 /C0055 /C0075/C0052/C0051 /C0052 /C0052 Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information.