MRF275G MOTOROLA | Alldatasheet
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MRF275GMOTOROLA RF DEVICE DATA The RF MOSFET Line /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.
- Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency — 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
- Overall Lower Capacitance @ 28 V C iss — 135 pF C oss — 140 pF C rss — 17 pF
- Simplified AVC, ALC and Modulation Typical data for power amplifiers in industrial and commercial applications:
- Typical Performance @ 400 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 12.5 dB Efficiency — 60%
- Typical Performance @ 225 MHz, 28 Vdc Output Power — 200 Watts Power Gain — 15 dB Efficiency — 65% MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 65 Vdc Gate–Source Voltage VGS ± 40 Adc Drain Current — Continuous ID 26 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 400 2.27 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.44 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF275G/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA
150 W, 28 V, 500 MHz
N–CHANNEL MOS BROADBAND 100 – 500 MHz RF POWER FET CASE 375–04, STYLE 2 /C0077/C0082/C0070/C0050/C0055/C0053/C0071 Motorola, Inc. 1997 D G S (FLANGE) D G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 1 mA Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1 µA ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 5 A) VDS(on) 0.5 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 3 3.75 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C iss — 135 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C oss — 140 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C rss — 17 — pF FUNCTIONAL CHARACTERISTICS (2) (Figure 1) Common Source Power Gain (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) G ps 10 11.2 — dB Drain Efficiency (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) η 50 55 — % Electrical Ruggedness (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA, VSWR 30:1 at all Phase Angles) ψ No Degradation in Output Power (1.) Each side of device measured separately. (2.) Measured in push–pull configuration.
Figure 1. 500 MHz Test Circuit εr = 2.55, copper clad both sides, 2 oz. copper. Points A are connected together on PCB. Points B are connected together on PCB.
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Gate Voltage Figure 4. Drain Current versus Gate Voltage Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage
500 MHz400 MHz
225 MHz
Figure 11. Series Equivalent Input/Output Impedance ZOL * = output power, voltage and frequency.
Figure 12. 400 MHz Test Circuit εr = 2.55, copper clad both sides, 2 oz. copper.
Figure 13. 225 MHz Test Circuit εr /C0094 5, Two sided, 1 oz. Copper. are ATC Type 100 or Equivalent. T2 1:9 Impedance Ratio, RF Transformer. NOTE: same is required for the output transformer.
Figure 16. MRF275G Test Fixture
- Drain shorted to source and positive voltage at the gate.
- Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower. ing conditions in RF applications. current level. This is equivalent to fT for bipolar transistors. dissipation within the device. resulting in a leakage current of a few nanoamperes.
MRF275GMOTOROLA RF DEVICE DATA Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating (or any of the maximum ratings on the front page). Ex- ceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of this device are essen- tially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protec- tion is required, an external zener diode is recommended. Using a resistor to keep the gate–to–source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is ap- plied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment. DESIGN CONSIDERATIONS The MRF275G is a RF power N–channel enhancement mode field–effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. Power output can be varied over a wide range with a low power dc control sig- nal. DC BIAS The MRF275G is an enhancement mode FET and, there- fore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum perfor- mance. The value of quiescent drain current (IDQ ) is not criti- cal for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ . For special applications such as linear amplifi- cation, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. There- fore, the gate bias circuit may be just a simple resistive divid- er network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems.
CASE 375–04 ISSUE D STYLE 2: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE D QU G R K RADIUS 2 PL –B– –T– E H J C SEATING PLANE N MAM0.25 (0.010) B MT –A– DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.330 1.350 33.79 34.29 B 0.370 0.410 9.40 10.41 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96 E 0.050 0.070 1.27 1.77 G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84 J 0.004 0.006 0.11 0.15 K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23 Q 0.060 0.070 1.52 1.78 R 0.390 0.410 9.91 10.41 U 1.100 BSC 27.94 BSC NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax INTERNET : http://motorola.com/sps MRF275G/D◊