MRF275G MACOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 16
Technical content
/C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz.
- Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency — 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
- Overall Lower Capacitance @ 28 V C iss — 135 pF C oss — 140 pF C rss — 17 pF
- Simplified AVC, ALC and Modulation Typical data for power amplifiers in industrial and commercial applications:
- Typical Performance @ 400 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 12.5 dB Efficiency — 60%
- Typical Performance @ 225 MHz, 28 Vdc Output Power — 200 Watts Power Gain — 15 dB Efficiency — 65% MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 65 Vdc Gate–Source Voltage VGS ± 40 Adc Drain Current — Continuous ID 26 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 400 2.27 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.44 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
150 W, 28 V, 500 MHz
N–CHANNEL MOS BROADBAND 100 – 500 MHz RF POWER FET CASE 375–04, STYLE 2 /C0077/C0082/C0070/C0050/C0055/C0053/C0071 D G S (FLANGE) D G Order this document by MRF 275G/DSEMICONDUCTOR TECHNICA L D ATA REV 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 1 mA Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1 µA ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 5 A) VDS(on) 0.5 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 3 3.75 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C iss — 135 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C oss — 140 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C rss — 17 — pF FUNCTIONAL CHARACTERISTICS (2) (Figure 1) Common Source Power Gain (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) G ps 10 11.2 — dB Drain Efficiency (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) η 50 55 — % Electrical Ruggedness (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA, VSWR 30:1 at all Phase Angles) ψ No Degradation in Output Power 1. Each side of device measured separately. 2. Measured in push–pull configuration. REV 1
Figure 1. 500 MHz Test Circuit εr = 2.55, copper clad both sides, 2 oz. copper. Points A are connected together on PCB. Points B are connected together on PCB.
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Gate Voltage Figure 4. Drain Current versus Gate Voltage Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage
500 MHz400 MHz
225 MHz
Figure 11. Series Equivalent Input/Output Impedance ZOL* = output power, voltage and frequency.
Figure 12. 400 MHz Test Circuit εr = 2.55, copper clad both sides, 2 oz. copper.
Figure 13. 225 MHz Test Circuit εr /C0094 5, Two sided, 1 oz. Copper. are ATC Type 100 or Equivalent. T2 1:9 Impedance Ratio, RF Transformer. NOTE: same is required for the output transformer.
NOTE: S–Parameter data represents measurements taken from one chip only. Table 1. Common Source S–Parameters (VDS = 12 V, ID = 4.5 A)
Table 1. Common Source S–Parameters (VDS = 12 V, ID = 4.5 A) continued Table 2. Common Source S–Parameters (VDS = 24 V, ID = 0.35 mA)
Table 2. Common Source S–Parameters (VDS = 24 V, ID = 0.35 mA) continued Table 3. Common Source S–Parameters (VDS = 28 V, ID = 0.39 mA)
Table 3. Common Source S–Parameters (VDS = 28 V, ID = 0.39 mA) continued
Figure 16. MRF275G Test Fixture
- Drain shorted to source and positive voltage at the gate.
- Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower. ing conditions in RF applications. dissipation within the device. resulting in a leakage current of a few nanoamperes. the oxide layer in the gate region. capacitor due to leakage currents or pickup. tion is required, an external zener diode is recommended.
may be large enough to exceed the gate–threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is ap- plied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment. DESIGN CONSIDERATIONS The MRF275G is a RF power N–channel enhancement mode field–effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. M/A-COM RF MOSFE Ts feature a vertical structure with a planar design. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage. Power output can be varied over a wide range with a low power dc control sig- nal. DC BIAS The MRF275G is an enhancement mode FET and, there- fore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum perfor- mance. The value of quiescent drain current (IDQ ) is not criti- cal for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ . For special applications such as linear amplifi- cation, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. There- fore, the gate bias circuit may be just a simple resistive divid- er network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. REV 1
CASE 375–04 ISSUE D STYLE 2: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE D QU G R K RADIUS 2 PL –B– –T– E H J C SEATING PLANE N MAM0.25 (0.010) B MT –A– DIM MIN MAX MIN MAX MILLIMETERS INCHES A 1.330 1.350 33.79 34.29 B 0.370 0.410 9.40 10.41 C 0.190 0.230 4.83 5.84 D 0.215 0.235 5.47 5.96 E 0.050 0.070 1.27 1.77 G 0.430 0.440 10.92 11.18 H 0.102 0.112 2.59 2.84 J 0.004 0.006 0.11 0.15 K 0.185 0.215 4.83 5.33 N 0.845 0.875 21.46 22.23 Q 0.060 0.070 1.52 1.78 R 0.390 0.410 9.91 10.41 U 1.100 BSC 27.94 BSC NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. R EV 1