MRF255 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
MRF255MOTOROLA RF DEVICE DATA The RF MOSFET Line /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source amplifier applications in 12.5 Volt mobile and base station equipment.
- Guaranteed Performance at 54 MHz, 12.5 Volts Output Power — 55 Watts PEP Power Gain — 13 dB Min Two–Tone IMD — –25 dBc Max Efficiency — 40% Min, Two–Tone Test
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Excellent Thermal Stability
- All Gold Metal for Ultra Reliability
- Aluminum Nitride Package Electrical Insulator
- Circuit Board Photomaster Available by Ordering Document MRF255PHT/D from Motorola Literature Distribution. MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 36 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 36 Vdc Gate–Source Voltage VGS ± 20 Vdc Drain Current — Continuous ID 22 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction T emperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 1.0 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF255/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0082/C0070/C0050/C0053/C0053 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET CASE 211–11, STYLE 2 Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 20 mAdc) V(BR)DSS 36 — — Vdc Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS — — 5.0 mAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 5.0 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 mAdc) VGS(th) 1.25 2.3 3.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 4.0 Adc) VDS(on) — — 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc) gfs 4.2 — — S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) C iss — 140 — pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) C oss — 285 — pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) C rss — 38 44 pF FUNCTIONAL TESTS (In Motorola T est Fixture.) Common Source Amplifier Power Gain, f1 = 54, f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) G ps 13 16 — dB Intermodulation Distortion (1), f1 = 54.000 MHz, f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) IMD (d3,d5) — –30 –25 dBc Drain Efficiency, f1 = 54; f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA) η 40 45 — % Drain Efficiency, f = 54 MHz (VDD = 12.5 Vdc, Pout = 55 W CW, IDQ = 400 mA) η — 60 — % Output Mismatch Stress, f1 = 54; f2 = 54.001 MHz (VDD = 12.5 Vdc, Pout = 55 W (PEP), IDQ = 400 mA, VSWR = 20:1, at all phase angles) ψ No Degradation in Output Power Before and After T est (1) To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each T one.
Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic Figure 2. IMD versus Output Power Figure 3. Output Power versus Input Power Figure 4. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage
2 WPin = 4 W
Table 2. Common Source Scattering Parameters
Table 2. Common Source Scattering Parameters (continued) cal structure with a planar design. construction and characteristics of FETs. (Coss) and reverse transfer (C rss) capacitances on data sheets.
- Drain shorted to source and positive voltage at the gate.
- Positive voltage of the drain in respect to source and zero
the power dissipation within the device.
MRF255MOTOROLA RF DEVICE DATA GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — T he gates of these devices are essentially capacitors. Circuits that leave the gate open– circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protec- tion is required, an external zener diode is recommended. Using a resistor to keep the gate–to–source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. DC BIAS Since the MRF255 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 8 for a typial plot of drain current ver- sus gate voltage. RF power FETs operate optimally with a quiescent drain current (IDQ ), whose value is application de- pendent. The MRF255 was characterized for linear and CW operation at IDQ = 400 mA, which is the suggested value of bias current for typical applications. The gate is a dc open circuit and draws essentially no cur- rent. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some applications may re- quire a more elaborate bias sytem. GAIN CONTROL For CW applications, power output of the MRF255 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manua l gain control, AGC/ALC and m odulation systems. The characteristic is very dependent on frequency and load line.
CASE 211–11 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 2: PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN A U M MQ R B D K E SEATING PLANE C J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 M 45 NOM 45 NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 /C0095 /C0095 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE : Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298 MRF255/D /C0042/C0077/C0082/C0070/C0050/C0053/C0053/C0047/C0068/C0042