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Technical content
Features
Advanced GaN on SiC, for optimal thermal performance Characterized for CW, long pulse (up to several seconds) and short pulse operations Device can be used in a single- -ended or push- -pull configuration Input matched for simplified input circuitry Q u a l i f i e du pt o5 5V Suitable for linear application Typical Applications Industrial heating Welding and heat sealing Plasma generation Lighting Scientific instrumentation Medical – Microwave ablation – Diathermy Document Number: MRF24G300HS Rev. 0, 09/2019 NXP Semiconductors Technical Data 2400–2500 MHz, 300 W CW, 50 V WIDEBAND RF POWER GaN TRANSISTORS NI- -780H- -4L MRF24G300H NI- -780S- -4L MRF24G300HS MRF24G300HS MRF24G300H Figure 1. Pin Connections
42 Drain B
source terminal for the transistor.
Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted) Table 5. Ordering Information
- Reliability tests were conducted at 225C. Operation with TCH at 350C will reduce median time to failure.
- RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by
the expression MTTF (hours) = 10[A + B/(T + 273)], whereT is the channel temperature in degrees Celsius,A = –10.3 andB = 8263.
- Each side of device measured separately.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to –5 V 2. Turn on VDS to nominal supply voltage (48 V) 3. For Class AB operations increase VGS until desired IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce V GS d o w nt o– 5V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS
Figure 2. MTTF versus Dissipated Power and Case under indicated test conditions. MTTF calculator available athttp://www.nxp.com.
Table 6. 2400–2500 MHz Performance(1) (In NXP MRF24G300HS Reference Circuit, 50 ohm system)
- All data measured in fixture with device soldered to heatsink.
Figure 3. MRF24G300HS Reference Circuit Component Layout — 2400–2500 MHz Note: All data measured in fixture with device soldered to heatsink. Table 7. MRF24G300HS Reference Circuit Component Designationsand Values — 2400–2500 MHz
2500 MHz
Figure 4. Power Gain, Drain Efficiency and CW Output Power Figure 5. CW Output Power versus Input Power and Frequency Figure 6. Power Gain and Drain Efficiency versus
2450 MHz
2400 MHz
Figure 7. Series Equivalent Source and Load Impedance — 2400–2500 MHz Note: Side A and Side B are tied together for these measurements.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software RF High Power Model .s2p File (Each side of device measured separately.) Development Tools Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2019 Initial release of data sheet
Information in this document is provided solely to enablesystem and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address:nxp.com/ SalesTermsandConditions. NXP and the NXP logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2019 NXP B.V. How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Document Number: MRF24G300HS Rev. 0, 09/2019