MRF224 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICALDATA, The RF Line NPN Silicon RF Power Transistor . «designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. * Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 40 W Power Gain = 4.5 dB Min “ eoowen Efficiency = 70% Min RE ROWER NPN SILICON MAXIMUM RATINGS [Rang [Smt [vane [on] [caecorsie vo | Vong [| vee | aon [caecorcurn— cman [te | 70 | ae | ELS “Total Device Dissipation @ Te = 25°C (2) 80 Watts Derate above 25°C 046 wee ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) [—___eraernne | mbt [|e [te oe OFF CHARACTERISTICS Colector-Emiter Breakdown Volage (iG = TOO AGG, lp =O) vencco [| - [| - p= | Cotector Emir Breakdown Valago ¢=20 made, Vee=0) | Varyces | 3 | — | — | ve | ON CHARACTERISTICS DC Current Gain FE (ic = 1.0 Ade, Voce = 5.0 Vde) DYNAMIC CHARACTERISTICS ‘Output Capacitance Cob 170 (Vo = 15 Vdc, Ie = 0, 1= 0.1 MHz) FUNCTIONAL TESTS ‘Common-Emitter Amplifier Power Gain GPE (Pout = 40 W, Voc = 12.5 Vdc, {= 175 MHz) Collector Efficiency Ey 70 % (Pout = 40 W, Vcc = 12.5 Vdo, f = 175 MHz) NOTES: 1, For repeated assembly use 5 in. Ib. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF ‘amplifiers. a MRF224 MOTOROLA RF DEVICE DATA 2-436 We 6367254 0106800 735
ata given ouput power, voltage and frequency. Figure 4. Series Equivalent Impedance