MRF21180 MOTOROLA | Alldatasheet
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MRF21180R6MOTOROLA RF DEVICE DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
- Typical 2-carrier W-CDMA Performance for V DD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power 38 Watts (Avg.) Power Gain 12.1 dB Efficiency 22% IM3 37.5 dBc ACPR -41 dBc
- Internally Input and Output Matched, for Ease of Use
- High Gain, High Efficiency, and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power
- Excellent Thermal Stability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 380 2.17 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case RθJC 0.46 °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF21180/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21180R6
2170 MHz, 170 W, 28 V
CASE 375D-04, STYLE 1 NI-1230 Motorola, Inc. 2004 REV 4 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS 10 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS 1 µAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.18 0.22 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 6 S DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss 3.6 pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 11 12.1 dB Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 19 22 % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz) IM3 -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) ACPR -41 -39 dBc Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push-pull configuration. (continued) Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF21180R6MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps 12 dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η 33 % Two-Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -30 dBc Two-Tone Input Return Loss (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -12 dB Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz) P1dB 180 W (2) Measurements made with device in push-pull configuration. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Figure 1. MRF21180 Test Circuit Schematic Table 1. MRF21180 Test Circuit Component Designations and Values Freescale Semiconductor, Inc.
Figure 2. MRF21180 Test Circuit Component Layout Freescale Semiconductor, Inc.
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Figure 4. Intermodulation Distortion Products Figure 5. Intermodulation Distortion versus Figure 6. 2-Carrier W-CDMA Broadband Figure 7. CW Performance Figure 8. Two-Tone Intermodulation
3.84 MHz Channel Bandwidth
Freescale Semiconductor, Inc.
Figure 9. Two-Tone Power Gain versus Figure 10. Two-Tone Broadband Performance Figure 11. Intermodulation Distortion Figure 12. 2-Carrier W-CDMA Spectrum
3.84 MHz BW
Freescale Semiconductor, Inc.
Figure 13. Series Equivalent Input and Output Impedance gate to gate, balanced configuration. from drain to drain, balanced configuration. Freescale Semiconductor, Inc.
MRF21180R6MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF21180R6MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.615 1.625 41.02 41.28 B 0.395 0.405 10.03 10.29 C 0.150 0.200 3.81 5.08 D 0.455 0.465 11.56 11.81 E 0.062 0.066 1.57 1.68 F 0.004 0.007 0.10 0.18 G 1.400 BSC 35.56 BSC H 0.079 0.089 2.01 2.26 K 0.117 0.137 2.97 3.48 L 0.540 BSC 13.72 BSC N 1.218 1.242 30.94 31.55 Q 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 A G L DK4X Q2X M 1.219 1.241 30.96 31.52 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF SEATING PLANE N C E M MAMaaa B MT B B (FLANGE) H F MAMccc B MT R (LID) S (INSULATOR) MAMbbb B MT A T MAMbbb B MT (INSULATOR) MAMccc B MT (LID) PIN 5 MAMbbb B MT Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21180/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...