MRF21090 MOTOROLA | Alldatasheet
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MRF21090R3 MRF21090SR3MOTOROLA RF DEVICE DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
- Typical W-CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power 11.5 Watts Efficiency 16% Gain 12.2 dB ACPR -45 dBc
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power
- Excellent Thermal Stability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 0.65 °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF21090/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21090R3 MRF21090SR3
2170 MHz, 90 W, 28 V
CASE 465C-02, STYLE 1 NI-880S MRF21090SR3 CASE 465B-03, STYLE 1 NI-880 MRF21090R3 Motorola, Inc. 2004 REV 6 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model MRF21090R3 MRF21090SR3 2 (Minimum) 1 (Minimum) Machine Model MRF21090R3 MRF21090SR3 M3 (Minimum) M4 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS 1 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS 10 µAdc ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs 7.2 S Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) VGS(Q) 3 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 1 A) VDS(on) 0.1 0.6 Vdc DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss 4.2 pF FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP , IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 10 11.7 dB Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP , IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) η 30 33 % Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP , IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD -30 -27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP , IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL -12 -9.0 dB Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Gps 11.7 dB Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) η 41 % Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Figure 3. Class AB Broadband Circuit Figure 4. CDMA ACPR, Power Gain and Drain Figure 5. Intermodulation Distortion versus Figure 6. Intermodulation Distortion Products Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation
4.096 MHz (5 MHz)
Freescale Semiconductor, Inc.
Figure 9. Series Equivalent Source and Load Impedance
2110 MHz
2170 MHz
Freescale Semiconductor, Inc.
iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF21090R3 MRF21090SR3MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 465B-03 ISSUE C NI-880 MRF21090R3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.535 0.545 13.6 13.8 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.175 0.205 4.44 5.21 N 0.871 0.889 19.30 22.60 Q .118 .138 3.00 3.51 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H F Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) S MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF CASE 465C-02 ISSUE A NI-880S MRF21090SR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.905 0.915 22.99 23.24 B 0.535 0.545 13.60 13.80 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE D K C E H F MAMbbb B MT B B (FLANGE) MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.007 REF 0.178 REF Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21090/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...