MRF21060 MOTOROLA | Alldatasheet

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MRF21060R3 MRF21060SR3MOTOROLA RF DEVICE DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

  • Typical W-CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power — 6.0 Watts Power Gain — 12.5 dB Drain Efficiency — 15%
  • Internally Matched, Controlled Q, for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Integrated ESD Protection
  • Designed for Maximum Gain and Insertion Phase Flatness
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 0.98 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.02 °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF21060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060R3 MRF21060SR3

2170 MHz, 60 W, 28 V

CASE 465-06, STYLE 1 NI-780 MRF21060R3 CASE 465A-06, STYLE 1 NI-780S MRF21060SR3  Motorola, Inc. 2004 REV 6 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 6 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 4.7 — S DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 2.7 — pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP , IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 — dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP , IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) η 31 34 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP , IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IMD — -30 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP , IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IRL — -12 — dB Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) P1dB — 60 — W Output Mismatch Stress (VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Figure 1. MRF21060 Test Circuit Schematic Freescale Semiconductor, Inc.

Figure 2. MRF21060 Test Circuit Component Layout Freescale Semiconductor, Inc.

Figure 3. Class AB Broadband Circuit Performance Figure 4. W-CDMA ACPR, Power Gain and Figure 5. Intermodulation Distortion Figure 6. Intermodulation Distortion Products Figure 7. Power Gain versus Output Power Figure 8. Power Gain and

15 DTCH

Freescale Semiconductor, Inc.

Figure 9. Series Equivalent Source and Load Impedance

2170 MHz

Freescale Semiconductor, Inc.

MRF21060R3 MRF21060SR3MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 465-06 ISSUE F NI-780 MRF21060R3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.772 0.788 19.60 20.00 Q .118 .138 3.00 3.51 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H S F S 0.365 0.375 9.27 9.52 M 0.774 0.786 19.66 19.96 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) CASE 465A-06 ISSUE F NI-780S MRF21060SR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE D K C E H F U (FLANGE) Z (LID) bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.005 REF 0.127 REF S 0.365 0.375 9.27 9.52 N 0.772 0.788 19.61 20.02 MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT A A (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21060/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...