MRF21045 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
MRF21045LR3 MRF21045LSR3MOTOROLA RF DEVICE DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- tions. To be used in Class AB fo r PCN - PCS/cellular radio and WLL applications.
- Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power 10 Watts Avg. Efficiency 23.5% Gain 15 dB IM3 -37.5 dBc ACPR -41 dBc
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power
- Excellent Thermal Stability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Low Gold Plating Thickness on Leads, 40µ″ Nominal.
- In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105 0.60 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.65 °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF21045/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21045LR3 MRF21045LSR3
2170 MHz, 45 W, 28 V
CASE 465E-04, STYLE 1 NI-400 MRF21045LR3 CASE 465F-04, STYLE 1 NI-400S MRF21045LSR3 Motorola, Inc. 2004 Rev. 9 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS 10 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS 1 µAdc ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs 3 S DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss 1.8 pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 13.5 15 dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 21 23.5 % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz.) IM3 -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz.) ACPR -41 -38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF21045LR3 MRF21045LSR3MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted) Characteristic UnitMaxTypMinSymbol FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) continued Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP , IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps 14.9 dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP , IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η 36 % Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP , IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -30 dBc Two-Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP , IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -12 dB Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz) P1dB 50 W Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Figure 1. MRF21045LR3(LSR3) Test Circuit Schematic Table 1. MRF21045LR3(LSR3) Component Designations and Values Freescale Semiconductor, Inc.
Figure 2. MRF21045LR3(LSR3) Test Circuit Component Layout Freescale Semiconductor, Inc.
3.84 MHz Channel Bandwidth
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Figure 4. Intermodulation Distortion Products Figure 5. Intermodulation Distortion versus Figure 6. 2-Carrier W-CDMA Broadband Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Freescale Semiconductor, Inc.
Figure 9. Two-Tone Power Gain versus Figure 10. Two-Tone Broadband Performance Figure 11. Intermodulation Distortion Figure 12. 2-Carrier W-CDMA Spectrum
3.84 MHz BW
Freescale Semiconductor, Inc.
Figure 13. Series Equivalent Source and Load Impedance Freescale Semiconductor, Inc.
MRF21045LR3 MRF21045LSR3MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF21045LR3 MRF21045LSR3MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 465E-04 ISSUE E NI-400 MRF21045LR3 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO (1.52±0.13) x 45° CHAMFER. STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE 2X D N (LID) E R (LID) F 2X K A T C MBMbbb A MT H B B G A MAMccc B MT MAMbbb B MT 2X Q M (INSULATOR) S (INSULATOR) MAMccc B MT MAMaaa B MT MAMaaa B MT DIM A MIN MAX MIN MAX MILLIMETERS .795 .805 20.19 20.44 INCHES B .380 .390 9.65 9.9 C .125 .163 3.17 4.14 D .275 .285 6.98 7.24 E .035 .045 0.89 1.14 F .004 .006 0.10 0.15 G H .057 .067 1.45 1.7 K .092 .122 2.33 3.1 M .395 .405 10 10.3 N .395 .405 10 10.3 Q .120 .130 3.05 3.3 R .395 .405 10 10.3 S .395 .405 10 10.3 aaa bbb ccc .600 BSC 15.24 BSC .005 BSC 0.127 BSC .010 BSC 0.254 BSC .015 BSC 0.381 BSC SEE NOTE 4 CASE 465F-04 ISSUE C NI-400S MRF21045LSR3 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE E F 2X K MAMbbb B MT A T C H B A DIM A MIN MAX MIN MAX MILLIMETERS .395 .405 10.03 10.29 INCHES B .395 .405 10.03 10.29 C .125 .163 3.18 4.14 D .275 .285 6.98 7.24 E .035 .045 0.89 1.14 F .004 .006 0.10 0.15 H .057 .067 1.45 1.70 K .092 .122 2.34 3.10 M .395 .405 10.03 10.29 S .395 .405 10.03 10.29 aaa .005 REF 0.127 REF 2X D MAMccc B MT bbb .010 REF 0.254 REF ccc .015 REF 0.38 REF N .395 .405 10.03 10.29 R .395 .405 10.03 10.29 MAMccc B MT MAMaaa B MT N (LID) M (INSULATOR) (FLANGE) B (FLANGE) R (LID) S (INSULATOR) MAMaaa B MT Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21045/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...