MRF20030 MOTOROLA | Alldatasheet

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MRF20030MOTOROLA RF DEVICE DATA The RF Sub–Micron Bipolar Line /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0066/C0105/C0112/C0111/C0108/C0097/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.

  • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics Output Power — 30 Watts (PEP) Power Gain — 9.8 dB Efficiency — 34% Intermodulation Distortion — –28 dBc
  • Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power — 30 Watts Power Gain — 10.5 dB Efficiency — 40%
  • Excellent Thermal Stability
  • Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • S–Parameter Characterization at High Bias Levels
  • Designed for FM, TDMA, CDMA, and Multi–Carrier Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Collector–Base Voltage VCBO 60 Vdc Collector–Emitter Voltage (RBE = 100 Ω ) VCER 30 Vdc Emitter–Base Voltage VEB –3 Vdc Collector Current – Continuous IC 4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 0.71 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance, Junction to Case (1) R θJC 1.4 °C/W (1) Thermal resistance is determined under specified RF operating condition. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 25 26 — Vdc Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 60 70 — Vdc Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 60 70 — Vdc Order this document by MRF20030/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0082/C0070/C0050/C0048/C0048/C0051/C0048 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR CASE 395D–03, STYLE 1  Motorola, Inc. 1997 REV 1

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter–Base Breakdown Voltage (IB = 5 mAdc, IC = 0) V(BR)EBO 3 3.8 — Vdc Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ICES — — 10 mAdc ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, ICE = 1 Adc) hFE 20 40 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) C ob — 28 — pF FUNCTIONAL TESTS (In Motorola Test Fixture) Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) G pe 9.8 10.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) η 34 38 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD — –3 3 –2 8 dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 17 — dB Load Mismatch (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) ψ No Degradation in Output Power Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) G pe — 10.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) η — 34 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD — –3 5 — dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL — 14 — dB GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) G pe — 10.5 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) η — 40 — % Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) IRL — 14 — dB Output Mismatch Stress (VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) ψ Typically No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched.

Figure 1. Class AB Test Fixture Electrical Schematic

Figure 2. Class A Test Fixture Electrical Schematic

Figure 13. Series Equivalent Input and Output Impedence Zin(1)= Conjugate of fixture base impedance.

1.9 GHz

1.95 GHz

1.85 GHz

2 GHz

Table 1. Common Emitter S–Parameters at VCE = 24 Vdc, IC = 1.8 Adc

MRF20030MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 395D–03 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.739 0.750 18.77 19.05 B 0.240 0.260 6.10 6.60 C 0.165 0.198 4.19 5.03 D 0.215 0.225 5.46 5.72 E 0.060 0.070 1.52 1.78 H 0.084 0.096 2.13 2.44 J 0.004 0.006 0.10 0.15 K 0.178 0.208 4.52 5.28 N 0.315 0.330 8.00 8.38 Q 0.125 0.135 3.18 3.42 U 0.560 BSC 14.23 BSC –B– STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER –A– U D K EN 2 PL Q 2 PL MAM0.51 (0.020) B MT SEATING PLANE C J H –T– W 0.035 0.045 0.89 1.14 W

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://motorola.com/sps MRF20030/D◊