MRF141 MACOM | Alldatasheet
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Technical content
/C0082/C0070/C0080/C0111/C0119/C0101/C0114/C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116/C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
- Guaranteed Performance at 30 MHz, 28 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40%
- Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB
- Low Thermal Resistance
- Ruggedness Tested at Rated Output Power
- Nitride Passivated Die for Enhanced Reliability MAXIMUM R ATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc Gate–Source Voltage VGS ± 40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.71 W atts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R qJC 0.6 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. /C0077/C0082/C0070/C0049/C0052/C0049
150 W , 28 V, 175 MHz
N–CHANNEL BROADBAND RF POWER MOSFET CASE 2 11–11, STYLE 2 D G S Order this document by MRF 141/DSEMICONDUCTOR TECHNICA L D ATA REV 9
- To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit (Class AB)
Table 1. Common Source S–Parameters (VDS = 24 V, ID = 5 A)
Table 1. Common Source S–Parameters (VDS = 24 V, ID = 5 A) continued Table 2. Common Source S–Parameters (VDS = 28 V, ID = 5 A)
Table 2. Common Source S–Parameters (VDS = 28 V, ID = 5 A) continued
- Drain shorted to source and positive voltage at the gate.
- Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower. ing conditions in RF applications. dissipation within the device. resulting in a leakage current of a few nanoamperes. damage to the oxide layer in the gate region. capacitor due to leakage currents or pickup. tion is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate–drain capacitance. If the gate–to–source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate–threshold voltage and turn the device on. HANDLING CONSIDER ATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is ap- plied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIG N CONSIDER ATIONS The MRF141 is an RF Power, MOS, N–channel enhance- men t mode field–effect transistor (FET) designed for HF and VHF power amplifier applications. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF141 is an enhancement mode FET and, there- fore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum perfor- mance. The value of quiescent drain current (I DQ ) is not criti- cal for many applications. The MRF141 was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ . For special applications such as linear amplifi- cation, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. There- fore, the gate bias circuit may be just a simple resistive divid- er network. Some applications may require a more elaborate bias sytem. GAIN CONTROL Power output of the MRF141 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. REV 9
CASE 211–11 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A U M MQ R B 3 2 D K E SEATING PLANE C J H DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 M 45 NOM 45 NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 /C0095/C0095 STYLE 2: PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. R EV 9