MRF140 MACOM | Alldatasheet

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Technical content

/C0082 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range.

  • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40% (Typ)
  • Superior High Order IMD
  • IMD (d3) (150 W PEP) — –30 dB (Typ)
  • IMD (d11) (150 W PEP) — –60 dB (Typ)
  • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc Gate–Source Voltage VGS ±40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.7 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.6 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. /C0077/C0082

150 W, to 150 MHz

N–CHANNEL MOS LINEAR RF POWER FET CASE 211–11, STYLE 2 Order this document by MRF 140/DSEMICONDUCTOR TECHNICA L D ATA REV 9

  1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

Figure 1. 30 MHz Test Circuit (Class AB)

Table 1. Common Source S–Parameters (VDS = 28 V, ID = 5 A)

Table 1. Common Source S–Parameters (VDS = 28 V, ID = 5 A) continued

RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci- tance from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capaci- tances and those given on data sheets are shown below. The C iss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operat- ing conditions in RF applications. %!’$ 4>> 2/ 2> :>> 2/ /> =>> 2/ LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional informa- tion on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, V DS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 10 9 ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, V GS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–cir- cuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY VCE(sat) IC rDS(on) = VDS(on) ID REV 9

CASE 211–11 ISSUE N !&% /C0049 "$ % */C0049/C0052 /C0049 ! &$! A U M MQ R B D K E /C0069 /C0071 /C0069 C J H /C0069/C0069 /C0069 /C0048/C0048 /C0048/C0048 /C0052 /C0049/C0052 /C0048/C0052 /C0048/C0049/C0048 /C0049/C0049 /C0049 /C0048 /C0048 /C0048 /C0049 /C0048 /C0052 /C0069/C0048/C0048/C0052 /C0048/C0049/C0049/C0048 /C0049/C0052 /C0048/C0049/C0052/C0052 /C0048/C0049 /C0052 /C0074/C0048/C0048/C0048 /C0048/C0048/C0048 /C0048/C0048 /C0048/C0049 /C0048/C0052 /C0049/C0049/C0048 /C0052 ! /C0052 ! /C0048/C0049/C0049 /C0048/C0049 /C0048 /C0048 /C0048 /C0052 /C0048 /C0052 /C0048 /C0048 /C0048 /C0048 /C0049 /C0049/C0052 %&* /C0049 %!’$ %!’$ /C0052 $ Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. R EV 9