MRF140 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
MRF140MOTOROLA RF DEVICE DATA The RF MOSFET Line /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range.
- Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40% (Typ)
- Superior High Order IMD
- IMD (d3) (150 W PEP) — –30 dB (Typ)
- IMD (d11) (150 W PEP) — –60 dB (Typ)
- 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc Gate–Source Voltage VGS ± 40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.7 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.6 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF140/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0082/C0070/C0049/C0052/C0048
150 W, to 150 MHz
N–CHANNEL MOS LINEAR RF POWER FET CASE 211–11, STYLE 2 Motorola, Inc. 1997 D G S REV 8
- To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit (Class AB)
Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Figure 6. Gate Voltage versus Drain Current
30 MHz 150 MHz
MRF140MOTOROLA RF DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capaci- tance from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capaci- tances and those given on data sheets are shown below. The C iss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operat- ing conditions in RF applications. C gd GATE SOURCE C gs DRAIN C ds C iss = Cgd + Cgs C oss = Cgd + Cds C rss = Cgd LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional informa- tion on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–cir- cuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY VCE(sat) IC rDS(on) = VDS(on) ID
CASE 211–11 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A U M MQ R B D K E SEATING PLANE C J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.960 0.990 24.39 25.14 B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 M 45 NOM 45 NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 /C0095/C0095 STYLE 2: PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://motorola.com/sps MRF140/D◊