MRF136 MACOM | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

/C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0069/C0110/C0104/C0097/C0110/C0099/C0101/C0109/C0101/C0110/C0116/C0045/C0077/C0111/C0100/C0101 /C0077/C0079/C0083/C0070/C0069/C0084 Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

  • Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain = 16 dB (Typ) Efficiency = 60% (Typical)
  • Small–Signal and Large–Signal Characterization
  • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
  • Excellent Thermal Stability, Ideally Suited For Class A Operation
  • Facilitates Manual Gain Control, ALC and Modulation Techniques MAXIMUM RATINGS Rating Symbol Value UnitRating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 65 Vdc Gate–Source Voltage VGS ± 40 Vdc Drain Current — Continuous ID 2.5 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 55 0.314 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max UnitCharacteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 3.2 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. /C0077/C0082/C0070/C0049/C0051/C0054

15 W, to 400 MHz

N–CHANNEL MOS BROADBAND RF POWER FET CASE 211–07, STYLE 2 D G S Order this document by MRF 136/DSEMICONDUCTOR TECHNICA L D ATA REV 7

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) V(BR)DSS 65 — — Vdc Zero–Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 2.0 mAdc Gate–Source Leakage Current (VGS = 40 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 250 mA) gfs 250 400 — mmhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C iss — 24 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C oss — 27 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C rss — 5.5 — pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 28 Vdc, ID = 500 mA, f = 150 MHz) NF — 1.0 — dB Common Source Power Gain (Figure 1) (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) G ps 13 16 — dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) η 50 60 — % Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA, VSWR 30:1 at all Phase Angles) ψ No Degradation in Output Power NOTES: 1. Each side measured separately. REV 7

Figure 1. 150 MHz Test Circuit

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power Figure 4. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage

150 MHz 200 MHz f = 100 MHz

200 MHz

150 MHz

Figure 8. Output Power versus Supply Voltage Figure 9. Output Power versus Gate Voltage Figure 10. Drain Current versus Gate Voltage Figure 11. Gate–Source Voltage versus Figure 12. Capacitance versus Drain–Source Voltage Figure 13. DC Safe Operating Area

400 MHz

400 MHz150 MHz

Figure 14. Output Power versus Input Power Figure 15. Output Power versus Gate Voltage

Table 1. Common Source Scattering Parameters

The MRF136 is an RF power N–Channel enhancement mode field–effect transistor (FET) designed especially for HF and VHF power amplifier applications. M/A-COM RF MOS FETs feature planar design for optimum manufacturability. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from ther- mal runaway, and the ability to withstand severely mis- matched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF136 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied without gate bias. A positive gate voltage causes drain current to flow (see Figure 10). RF power FETs require forward bias for optimum gain and power output. A Class AB condition with quiescent drain current (IDQ ) in the 25–100 mA range is sufficient for many applications. For special requirements such as linear amplification, IDQ may have to be adjusted to optimize the critical parameters. The MOS gate is a dc open circuit. Since the gate bias circuit does not have to deliver any current to the FET, a simple resistive divider arrangement may sometimes suffice for this function. Special applications may require more elaborate gate bias systems. GAIN CONTROL Power output of the MRF136 may be controlled from rated values down to the milliwatt region (>20 dB reduction in power output with constant input power) by varying the dc gate voltage. This feature, not available in bipolar RF power devices, facilitates the incorporation of manual gain control, AGC/ALC and modulation schemes into system designs. A full range of power output control may require dc gate voltage excursions into the negative region. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for MRF136. See M/A-COM Applied to RF Power Transistors. Both small signal scattering parameters and large signal impedance parameters are provided. Large signal impedances should be used for network designs wherever possible. While the s parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is particularly useful at frequencies outside those presented in the large signal impedance plots. RF power FETs are triode devices and are therefore not unilateral. This, coupled with the very high gain, yields a device capable of self oscillation. Stability may be achieved using techniques such as drain loading, input shunt resistive loading, or feedback. S parameter stability analysis can provide useful information in the selection of loading and/or feedback to insure stable operation. The MRF136 was characterized with a 27 ohm input shunt loading resistor. For further discussion of RF amplifier stability and the use of two port parameters in RF amplifier design, see M/A-COM LOW NOISE OPERATION Input resistive loading will degrade noise performance, and noise figure may vary significantly with gate driving imped- ance. A low loss input matching network with its gate impedance optimized for lowest noise is recommended. REV 7

CASE 211–07 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A U M MQ R B 3 2 D K E SEATING PLANE C J H S DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.960 0.990 24.39 25.14 B 0.370 0.390 9.40 9.90 C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.66 H 0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15 K 0.395 0.405 10.04 10.28 M 40 50 40 50 Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 /C0095/C0095/C0095/C0095 STYLE 2: PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. R EV 7