MRF136 MOTOROLA | Alldatasheet

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MRF136 MRF136YMOTOROLA RF DEVICE DATA The RF MOSFET Line /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100/C0045/C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0069/C0110/C0104/C0097/C0110/C0099/C0101/C0109/C0101/C0110/C0116/C0045/C0077/C0111/C0100/C0101 /C0077/C0079/C0083/C0070/C0069/C0084/C0115 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.

  • Guaranteed 28 Volt, 150 MHz Performance MRF136 MRF136Y Output Power = 15 Watts Output Power = 30 Watts Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ) Efficiency = 60% (Typical) Efficiency = 54% (Typical)
  • Small–Signal and Large–Signal Characterization
  • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
  • Space Saving Package For Push–Pull Circuit
  • Excellent Thermal Stability, Ideally Suited For Class A Operation
  • Facilitates Manual Gain Control, ALC and Modulation Techniques MAXIMUM RATINGS Rating Symbol Value UnitRating Symbol MRF136 MRF136Y Unit Drain–Source Voltage VDSS 65 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ ) VDGR 65 65 Vdc Gate–Source Voltage VGS ± 40 Vdc Drain Current — Continuous ID 2.5 5.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 55 0.314 100 0.571 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction T emperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max UnitCharacteristic Symbol MRF136 MRF136Y Unit Thermal Resistance, Junction to Case R θJC 3.2 1.75 °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF136/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0082/C0070/C0049/C0051/C0054 /C0077/C0082/C0070/C0049/C0051/C0054/C0089

15 W, 30 W, to 400 MHz

N–CHANNEL MOS BROADBAND RF POWER FETs CASE 211–07, STYLE 2 MRF136 CASE 319B–02, STYLE 1 MRF136Y  Motorola, Inc. 1994 D G S D G S (FLANGE) MRF136 MRF136Y D G REV 6

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) V(BR)DSS 65 — — Vdc Zero–Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS — — 2.0 mAdc Gate–Source Leakage Current (VGS = 40 V, VDS = 0) IGSS — — 1.0 µAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 250 mA) gfs 250 400 — mmhos DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C iss — 24 — pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C oss — 27 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C rss — 5.5 — pF FUNCTIONAL CHARACTERISTICS (2) Noise Figure MRF136 (VDS = 28 Vdc, ID = 500 mA, f = 150 MHz) NF — 1.0 — dB Common Source Power Gain (Figure 1) MRF136 (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) G ps 13 16 — dB Common Source Power Gain (Figure 2) MRF136Y (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA) G ps 12 14 — dB Drain Efficiency (Figure 1) MRF136 (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) η 50 60 — % Drain Efficiency (Figure 2) MRF136Y (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA) η 50 54 — % (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA, VSWR 30:1 at all Phase Angles) ψ No Degradation in Output Power (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) ψ No Degradation in Output Power NOTES: 1. For MRF136Y , each side measured separately. 2.For MRF136Y measured in push–pull configuration.

Figure 3. Output Power versus Input Power Figure 4. Output Power versus Input Power Figure 5. Output Power versus Input Power Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage Figure 8. Output Power versus Supply Voltage

150 MHz 200 MHz f = 100 MHz

200 MHz

150 MHz

Figure 9. Output Power versus Supply Voltage Figure 10. Output Power versus Gate Voltage Figure 11. Drain Current versus Gate Voltage Figure 12. Gate–Source Voltage versus Figure 13. Capacitance versus Drain–Source Voltage* Figure 14. DC Safe Operating Area *Data shown applies to MRF136 and each half of MRF136Y.

400 MHz

400 MHz150 MHz

Figure 15. Output Power versus Input Power Figure 16. Power Gain versus Frequency Figure 17. Drain Efficiency versus Frequency Figure 18. Output Power versus Gate Voltage Figure 19. Output Power versus Input Power Figure 20. Output Power versus Gate Voltage

30 MHz

Table 1. Common Source Scattering Parameters

The MRF136 and MRF136Y are RF power N–Channel enhancement mode field–effect transistors (FETs) designed especially for HF and VHF power amplifier applications. Motorola RF MOS FET s feature planar design for optimum manufacturability. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from ther- mal runaway, and the ability to withstand severely mis- matched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF136 and MRF136Y are enhancement mode FETs and, therefore, do not conduct when drain voltage is applied without gate bias. A positive gate voltage causes drain current to flow (see Figure 11). RF power FETs require forward bias for optimum gain and power output. A Class AB condition with quiescent drain current (IDQ ) in the 25–100 mA range is sufficient for many applications. For special requirements such as linear amplification, IDQ may have to be adjusted to optimize the critical parameters. The MOS gate is a dc open circuit. Since the gate bias circuit does not have to deliver any current to the FET, a simple resistive divider arrangement may sometimes suffice for this function. Special applications may require more elaborate gate bias systems. GAIN CONTROL Power output of the MRF136 and MRF136Y may be controlled from rated values down to the milliwatt region (>20 dB reduction in power output with constant input power) by varying the dc gate voltage. This feature, not available in bipolar RF power devices, facilitates the incorporation of manual gain control, AGC/ALC and modulation schemes into system designs. A full range of power output control may require dc gate voltage excursions into the negative region. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for MRF136 and MRF136Y. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. Both small signal scattering parameters (MRF136 only) and large signal impedance parameters are provided. Large signal imped- ances should be used for network designs wherever possible. While the s parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is particularly useful at frequencies outside those presented in the large signal impedance plots. RF power FETs are triode devices and are therefore not unilateral. This, coupled with the very high gain, yields a device capable of self oscillation. Stability may be achieved using techniques such as drain loading, input shunt resistive loading, or feedback. S parameter stability analysis can provide useful information in the selection of loading and/or feedback to insure stable operation. The MRF136 was characterized with a 27 ohm input shunt loading resistor, while the MRF136Y was characterized with a resistive feedback loop around each of its two active devices. For further discussion of RF amplifier stability and the use of two port parameters in RF amplifier design, see Motorola Data (DL110 Rev 1). LOW NOISE OPERATION Input resistive loading will degrade noise performance, and noise figure may vary significantly with gate driving imped- ance. A low loss input matching network with its gate impedance optimized for lowest noise is recommended.

MRF136 MRF136YMOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 211–07 ISSUE N MRF136 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A U M MQ R B D K E SEATING PLANE C J H S DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.960 0.990 24.39 25.14 B 0.370 0.390 9.40 9.90 C 0.229 0.281 5.82 7.13 D 0.215 0.235 5.47 5.96 E 0.085 0.105 2.16 2.66 H 0.150 0.108 3.81 4.57 J 0.004 0.006 0.11 0.15 K 0.395 0.405 10.04 10.28 M 40 50 40 50 Q 0.113 0.130 2.88 3.30 R 0.245 0.255 6.23 6.47 S 0.790 0.810 20.07 20.57 U 0.720 0.730 18.29 18.54 /C0095 /C0095 /C0095 /C0095 STYLE 2: PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN CASE 319B–02 ISSUE C MRF136Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 1: PIN 1. GATE (INPUT) 2. GATE (INPUT) 3. DRAIN (OUTPUT) 4. DRAIN (OUTPUT) SOURCE IS FLANGE IDENTIFICATION NOTCH 4 3 1 2 –A– L K D F 4 PL Q 2 PL –N– H J B E C SEATING PLANE–T– MAM0.15 (0.006) N MT MAM0.38 (0.015) N MT MAM0.38 (0.015) N MT DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.965 0.985 24.51 25.02 B 0.355 0.375 9.02 9.52 C 0.230 0.260 5.84 6.60 D 0.055 0.065 1.40 1.65 E 0.102 0.114 2.59 2.90 F 0.055 0.065 1.40 1.65 H 0.160 0.170 4.06 4.31 J 0.004 0.006 0.10 0.15 K 0.120 0.140 3.05 3.55 L 0.725 BSC 18.42 BSC N 0.225 0.241 5.72 6.12 Q 0.125 0.135 3.18 3.42

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. MRF136/D /C0042/C0077/C0082/C0070/C0049/C0051/C0054/C0047/C0068/C0042