MRF10350 MACOM | Alldatasheet
Document overview
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Technical content
/C0077 /C0084 Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
- Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ)
- 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
- Hermetically Sealed Package
- Silicon Nitride Passivated
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Internal Input and Output Matching
- Characterized using Mode–S Pulse Format MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 65 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 31 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 1590 9.1 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (3) R θJC 0.11 °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case θJC measured using Mode–S pulse train, 128 µs burst 0.5 µs on, 0.5 µs off repeating at 6.4 ms interval.) /C0077
350 W (PEAK)
1025–1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355E–01, STYLE 1 REV 1 Order this document by MRF1 0350/DSEMICONDUCTOR TECHNICA L D ATA
Figure 1. Test Circuit
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