MRF10120 MACOM | Alldatasheet
Document overview
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Technical content
/C0097 /C0080 /C0080 /C0097 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters.
- Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ)
- 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
- Hermetically Sealed Industry Standard Package
- Silicon Nitride Passivated
- Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
- Internal Input and Output Matching for Broadband Operation MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 15 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 380 2.17 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Junction Temperature TJ 200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (3) R θJC 0.46 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ICBO — — 25 mAdc NOTES: (continued) 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
120 W (PEAK), 960–1215 MHz
CASE 355C–02, STYLE 1 Order this document by MRF 10120/DSEMICONDUCTOR TECHNICA L D ATA REV 8
Figure 1. Test Circuit
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