MRF1001A MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Silicon NPN, To-39 packaged VHF/UHF Transistor
- Ftau = 3.0 Ghz ( typ) @ 300MHz, 14v, 90mA,
- G U max = 11.5 dB ( typ) @ 300 MHz, 14v, 90mA
- |S 21 |2 = 11 dB ( typ) @ 300 MHz, 14v, 90mA RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MSC1311.PDF 10-25-99 MRF1001A ELECTRICAL SPECIFICATIONS ( Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc) 20 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IC= 0.1 mAdc) 3.5 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC=1.0 mAdc) 30 - - Vdc ICBO Collector-Base (VCB = 10 Vdc) - 50 - µA VCE(sat) Collector-Emitter Saturation Voltage (IC = 50mA, IC/IB = 10) - 100 - mV (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 50 - 300 - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 90 mAdc, VCE = 14 Vdc, f = 300 MHz) - 3.0 - GHz
Table 1. Common Emitter S-Parameters, @ VCE = 14 V, IC = 90 mA
MSC1311.PDF 10-25-99 MRF1001A