MRD6S18060MR1 FREESCALE | Alldatasheet

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Technical content

multicarrier amplifier applications.

  • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz) Power Gain — 15 dB Drain Efficiency - 50%
  • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805-1880 MHz or 1930-1990 MHz) Power Gain — 15.5 dB Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -76 dBc EVM — 2% rms
  • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product. packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

  1. Part is internally matched both on input and output.

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz

Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1900 MHz Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1900 MHz

Figure 2. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1900 MHz

Figure 3. Power Gain, Input Return Loss and Drain Figure 4. Power Gain, Input Return Loss and Drain Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power

24 V20 V16 V12 V

MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature

Figure 14. Series Equivalent Source and Load Impedance — 1900 MHz

Figure 15. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1800 MHz Table 7. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1800 MHz

Figure 16. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1800 MHz

Figure 24. Series Equivalent Source and Load Impedance — 1800 MHz

MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor NOTES

MRF6S18060MR1 MRF6S18060MBR1 PACKAGE DIMENSIONS CASE 1486-03 ISSUE C TO-270 WB-4 PLASTIC MRF6S18060MR1 DATUM PLANE BOTTOM VIEW PIN 5 NOTE 8 AB C H DRAIN LEAD D AMaaa C D2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. F ZONE J A DIM A MIN MAX MIN MAX MILLIMETERS .100 .104 2.54 2.64 INCHES A1 .039 .043 0.99 1.09 A2 .040 .042 1.02 1.07 D .712 .720 18.08 18.29 D1 .688 .692 17.48 17.58 D2 .011 .019 0.28 0.48 E .551 .559 14 14.2 E1 .353 .357 8.97 9.07 E2 .132 .140 3.35 3.56 E3 .124 .132 3.15 3.35 F b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 BSC .106 BSC

0.64 BSC

2.69 BSC

STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE aaa .004 0.10 GATE LEAD e E SEATING PLANE ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ NOTE 7 E5 .346 .350 8.79 8.89

MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor

MRF6S18060MR1 MRF6S18060MBR1

MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor

MRF6S18060MR1 MRF6S18060MBR1 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7

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