MRA0610 MOTOROLA | Alldatasheet
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laa, MOTOROLA I-33-O| @ SEMICONDUCTOR yyy TECHNICAL DATA The RF Line Series UHF Power Transistors \\,_ «++ designed primarily for wideband, large-signat output and driver amplifier stages in 7 to 7.8 dB \\ the 600 to 1000 MHiz frequency range. 600-1000 MHz @ Designed for Class C, Common Base Power Amplifiers 3 TO 40 WATTS ©@ Specified 28 Volt, 1000 MHz Characteristics: BROADBAND Output Power — 3 to 40 Watts UHF POWER Power Gain — 7 to 7.8 dB Min, Common Base . TRANSISTORS Collector Efficiency — 50 to 55% © Built-In Matching Network for Broadband Operation @ Gold Metallization for Improved Reliability @ Diffused Sallast Resistors Wz es CASE 394-01, STYLE 1 {MRA .25) MAXIMUM RATINGS | ColectorBesevonage Tce «| SSC*dCiéG~C*S | EmineraseVorage | Cec | SSC*dSCi‘i=CSd | Coisctor Current — Continous "dT | OS tS | ee | Cae | + [Operating Junction Temperature dT Ct | CSCSC*C“‘RSC*~C*d THERMAL CHARACTERISTICS [Thermal Resistance, AF, Junction Case | SRS] tS] SC] | 28 | cw
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage: {lc = 20 mA, Vee = 0) MRA0610-3, 50 {lc = 60 MA, Veg = 0) c) 50 {ic = 100 mA, Vge = 0} -18A 50 (Ig = 200 mA, Vee = 0) 404 50 Emiter-Base Breakdown Voltage VIBRIEBO. Vde ile = 0.25 mA, Ic = 0) MRA0610-3 {ig = 0.75 mA, Ic = 0) cE) (le = 1.25 mA, Ic = 0) -18A {lg = 2.5 mA, ic = 0) -40A Collector Cutoff Currant MRA0610-3 ‘80 (Vem = 28 V, le = 0) a “184 A (continued)
“Foil wrap or plate around ta ground plane. Board material 0.020 inch glass teflon er = 2.55. (1) Bypass capacitor to ground lor shunt inductor (220pF chap). (2) Use 8+ bypass of 0.01 and 1,4 capacitors at this pot. Figure 14. Test Circuit Boards for MRA0610 Series