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MOTOROLA SC {XSTRS/R FF Ab vey 6367254 0082489 2 ii

6367254 MOTOROLA SC (XSTRS/R F) 96D 82489 D

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Derate above 26°C mwre NPN SILICON ‘Operating and Storage Junction Ty, Testo —65 to +200 c Temperature Range . Refer to MD3726 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [Characteristle SY Symbot Tmin [tye [mex [unit] OFF CHARACTERISTICS t Collector-Emitter Breakdown Voltage(1) V\\BRICEO Vde lig = 10 mAde, ip = 0) Collector-Emitter Breakdown Voltage Vde (ic = 10 wAde, Vee = 0) Collector-Base Breakdown Voltage 70 Vide {ig = 10 4Adc, Ie = 0) ‘Emitter-Base Breakdown Voltage Ve Aig = 10 wAde, Ic = 0 Collector Cutoff Current Icgo (Wop = 30 Vide, Ie = 0) ON CHARACTERISTICS(1) ‘DC Current Gain lic = 100 mAde, VcE = 1.0 Vde) 50 100 (ic = 500 mAde, VCE = 1.0 Vde) 30 60 lig = 1.0 Ade, Voce = 5.0 Vdc) 20 45 1 Collector-Emitter Saturation Voltage (Ic = 100 mAdo, Ip = 10 mAde) | Vce;sat) 0.14 0.26 Vde . (lc = 590 mAds, Ip = 50 mAdc) 0.23 0.62 : {ig = 1.0 Ade, Ig = 100 mAde) 0.36 0.95 Base-Emitter Saturation Voltage (ic = 100 mAde, Ip = 10mAdc) | Vee%sat) 0.78 Vide : {ic = 600 mAde, Ig = 60 mAdc) 0.88 : {ig = 1.0 Ade, Ig = 100 mAdc) 1.0 SMALL-SIGNAL CHARACTERISTICS ‘Current-Gain — Bandwidth Product(1) ft . lig = 80 mAdo, Voce = 10 Vdo, f = 100 MHz) Output Capacitance Cobo pF (Vcp = 10 Vde, le = 0, f = 1.0 MHz) Input Capacitance 70 pF (VBE = 0.5 Vdo, Ic = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS ‘Tumn-On Time ° ton (Wee = 30 Vde, Io = 0.5 Adc, Vee = 3.8 Vdc, Ipr = 60 mAdo) ‘Turn-Off Time toff (Vcc = 30 Vde, Ic = 0.6 Ade, Ipi = Ip2 = 50 mAdc) (1) Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. ! a i MOTOROLA SMALL-SIGNAL SEMICONDUCTORS i . 5115

MOTOROLA SC {XSTRS/R F} Ab ey b3b7254 0082440 4 i

6367254 MOTOROLA SC CXSTRS/R FD 96D 82490 D

. - T-43-a5 7 ' [Rating | Symbol [wnonora [noaore| Unit _| MHQ4014 i [colietoréminerVotege | Ves | oo | 70 | vae_| CASE 632-02, STYLE 1 : [cottstor-Base Voltage | Voso | eo | 70 {vac | 0-116 : [Emitersese Vortegs | Veso | 60 ae i [Ccavsctor Curent—Contnuows | te [18 | Ade | Four fransistors| . Esch Equal qT ‘Total Device Dissipation ‘@TA = 250 760 2600 | mW QUAD : Derate above 25°C 43 143_| mre MEMORY DRIVER TRANSISTOR : . Total Device Dissipation ' ‘ @T¢ = 2 Watts NPN SILICON { Derate above 26°C mwrc ‘Operating end Storage Junction TyTetg | 85 to +200 c ‘Temperature Range t * lefer to MD3725 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) i [— haractereis | Sombot [tnin [tye [Moe [unt | ' OFF CHARACTERISTICS t Collector-Emitter Breakdown Voltage(1) ViBRICEO Ve ~ fic = 10 mAde, Ig = 0) (MHO4013 Meador Collector-Emitter Breakdown Voltage ViBRICES (ic = 10 wAdo, Vge = 0) MHa4013 ! Mioaoia CaleciorBace Breakdown Volage Vianio5o ‘ (ic = 10 wAde, Ie = 0) MHa4013 60 Miodo%4 % i [EmiterGeseGreatdownVolage We 10uAdcic=0) | Wangs | 60 | = | — | vae_| : [coletor Gutoft Curent (Veg =0Ve,te-0 it itso | — | — [soo | nade | ‘ON CHARACTERISTICS(1) DC Current Gain (ic = 100 mAdo, Voge = 1.0 Vdo) 60 100 {ic = 00 mAdo, VcE = 1.0 Vdc) 3 65 | lig = 1.0 Ade, Voge = 8.0 Vdo) 25 50 : Collector-Emitter Saturation Voltage (lc = 100 mAdc, Ip = 10 mAdc} Vcetsat) 0.14 0.26 {ic = 500 mAde, Ig = 50 mAdc) 0,23 0.52 . lig = 1.0 Ade, ig = 100 mAdc) 0.36 0,95 . Bese-Emitter Seturation Voltage {Ic = 100 mAdo, Ig = 10 mAdc) ‘VBE(sat) 0.75 0.86 Vee : {ic = 600 mAde, Ip = 50 mAdc) 0.88 1 7 (ig = 1,0 Ade, Ig = 100 mAdc) 1.0 17 'SMALL-SIGNAL CHARACTERISTICS ‘Current-Gain — Bandwidth Product(1) ft 218 llc = 50 mAde, Voe = 10 Vdc, f = 100 MHz) _ . : ‘utput Capacitance 7 (Vcp = 10 Vdo, tg = 0, f = 1 MHz) Tnpat Copactienco Wee = 0.5 Vde, ic = 0, f = 1 MHz) SWITCHING CHARACTERISTICS i ‘Turn-On Time : (Woe = 30 Vide, Ic = 0.5 Adc, Vge{off) = 3-8 Vide, Igy = 50 mAdo) | Turn-Of Time ‘of H (Wee = 30 Vde, Ic = 0.8 Ade, Ips = Ig2 = 50 mAdc) {1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2,0%. a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-116

~ - oe a = — 4 MOTOROLA SC {XSTRS/R F} 9b DE bab7254 ooée44ib u | : - i mete : : 6367254 MOTOROLA SC CXSTRS/R F) 86D 82491 D i ‘MHQ4013, MHQ4014 - } T:43-a5 i . Vines9? Bara L atv 1 as | Duty Oyle= 2.05 | : i : MOTOROLA SMALL-SIGNAL SEMICONDUCTORS : 5-117 na _ ae

: MOTOROLA SC {XSTRS/R FF 9b vey 6367254 O04e44e ec r

6367254 MOTOROLA SC (XSTRS/R F) 960 82492 D i

T-43-a5 | MAXIMUM RATINGS. : : [rating Svmbot [veut | [Goecorenitarvotese | Vero [| var] | - CASE GUM STYLE [‘collector-Base Voge | Vowo | go ee | [Emiter-Base Votege | Vewo | 80 |e | : [cater Curent Coniniows | Ie. | s00 | ma Total Device Dissipation ‘ . @ta= 250 oss | 19 | wots quad Dertte above 2616 shz_| wee | mwre Total Device Dissipation COMPLEMENTARY TRANSISTOR @Tc = 25°C Watts Derate sbove 25°C mwrc NPN/PNP SILICON ‘Operating and Storage Junction Ts Tstg =65 to +200 °c Fempersture Range Refer to MHO2222 for NPN graphs.* ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) (characteristic TT Svmbot [min [tye Mex [unit OFF CHARACTERISTICS [[cotlestor-mitter Breakdown Vottagelt) (ic = 10mAdig=0 | Vignyceo | 30 [ — | — [va | | Gotlestor-Base Breakdown Voltage (ic = 1 yAdate=0) | Vipnycwo | 62 | — | | vas | Emiter-Sace Breakdown Voltoge (ie =10yAdtc~0 | Mienewo | 80 | — | — | vae_| [Collector Cutoff Current Vop=80Vdaie=0) | cso | ~~ | a0 | nate | [Emitter Cutoff Current Vae=S0Vdtc=0 | eso | ~— [|| nace | ON CHARACTERISTICS: DC Current Gain(1) {ic = 1.0 mAde, Veg = 10 Vde) ‘MHQ6001 cy : tmnasooe fo | (ig = 10 mAde, Veg = 10 Vee) MHias001 35 | winasooe Fs i {ic = 160 mAde, Voce = 10 Vde) MHa6001 40 fy ‘MHa6002 100 5 {ic = 300 mAdc, Vee = 10 Vdc) ‘MHO«001 20

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t Collector-Emitter Saturation Voltage(t) (Ic = 150 mAdc, Ig = 1 mAde) Veeisat) 04 Vde ‘I lig = 300 mAdc, Ig = 30 mAdc) 14 i ‘Baso-Emitter Saturation Voltage(1) (ic = 180 mAdc, Ig = 15 mAdc) VeE(sat) Vde | {ig = 300 mAde, Ig = 30 mAdc} ‘SHALL SIGNAL CHARACTERISTICS : Current-Gain — Bandwidth Product(1) (Ic = 50 mAdc, Vcg = 20 Vde, fr . # = 100 kHz) eters neremeeres gl = [= tet | = PNP. - PNP. 17 : SWITCHING CHARACTERISTICS ° Turn-On Time (Voc = 30 Vde, VgE = 0.5 Vdo, ton Ig. = 160 mAdc, Igy = 15 mAdc) : Tum-Off Time (Vcc = 80 Vde, Ic = 150 mAdc, Toff . py = pa = 15 mAdc) (1) Pulse Tost: Pulse Width < 300 ps, Duty Cycle < 2.0%. "Refer to MHQ2907 for PNP graphs. # MOTOROLA SMALL-SIGNAL SEMICONDUCTORS i 5118

MOTOROLA SC {XSTRS/R FY 4b DEgp 6367254 0082493 4 |

6367254 MOTOROLA SC (XSTRS/R F) S6D 82493 D : ‘

MAXIMUM RATINGS T-43B-a2asz . [‘cotectorémiverVotage | Vego | 8 ae | [enitcane Votes Weng [ 39 [ve | MPQ918 [ Geesr Gant Caninaoas [te [ 20 | mao Tour CASE 646-06, STYLE 1 Transistors 0-116 Equal Power ‘Total Device Dissipation @ TA = 2C 500 200 | mw Derate above 25°C 40 72 mwre . Total Device Dissipation : @Tc = 26°C 67 24 | Watts 4 i Derate above 25°C 0,825 19,2 mwrc 1 i ‘Operating and Storage Junction | Tj. Tstg 85 to +160 °C ' | Temperature Range auab ' AMPLIFIER TRANSISTOR THERMAL CHARACTERISTICS “Junction to . NPN SILICON: care meee Le |e Le i Bifoctive, 4 Oe Refer to MDSTS for graphs. ‘Coupling Factors Q1-04 or 02-03 70 % . Q1-02 or 03-04 26 % ELECTRICAL CHARACTERISTICS (Ta ~ 26°C unless otherwise noted.) [Charnceriete SS Symbot | main [typ [Mex [unit | OFF CHARACTERISTICS: [cotectorEmiter Breakdown Volage(ti ig = S0mAdetg=0 | Vipnyceo | 16 | — [= | vac | | [colletor-Boso Breakdown Voltage (ic = V0 nAdo.te=0) | Viericeo [90 [| — | = | vae_| ‘ [collector Cutoff Current Vop=16Vdqie=0) | topo |< | = [0 [nae | ‘ON CHARACTERISTICS(1) DC Current Gain (Ig = 0.1 mAde, VoE = 1.0 Vdc) 110 {ic = 3.0 mAdo, VoE = 1.0 Vdc) 80 lig = 10 mAde, Vor = 1.0 Vée) 50 [ catectormiver Saturation Voltage (ic = made ig = tomAdd | Veeioy | — | am | oa | vie | [ eese-Emiter Sturtion Voltage (¢= 1OmAde ig = 1OmAd) | Vaeieny | — | oea | 10 | vac | 1 ‘SMALL-SIGNAL CHARACTERISTICS ' ‘Current-Gain — Bandwidth Product (Ic = 4.0 mAde, Vcg = 10 Vde, pe [@] f = 100 MHz) ane Noa Sawer Sate Tima tape oe Hae carats Whe ass ig =o7r= in) | eye [= fs [20 | or] [ Noise Figure lig = 1.0 mAde, Vog = 60Vde,fig = a000hms,f= comma] nF | — | ao | eo [ae | (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle = 2.0%. a * MOTOROLA SMALL-SIGNAL SEMICONDUCTORS. 5-119

MOTOROLA SC {XSTRS/R F} Tb DE~Pb3b7254 OO82494 b T | -- ee ~ . : i - : ; 6367254 MOTOROLA SC (XSTRS/R F) 96D 82494 D t MAXIMUM RATINGS T-43-a t . [Toting [Symbor [Vato unit] : [collectorsese Votege | Vego | 40S do : i [EmitersueeVotage | Vego | __40__| vee | MPQ1000 | [Collector Current —Continuows | tc | 600 made | Hi rant CASE 646-06, STYLE 1 ! isto ! Equal Power! TO-116 . Total Device Dissipation _ : etna x0 mw . Derate above 25°C 5.18 mwrc . ‘Tota! Device Dissipation t @Tc = 26°C ‘Watts 14 Derate above 25°C mwre 1 Operating and Storage Junction Tye Tat -55 to +160 7 Peat en ete] Sere | | auap ~ AMPLIFIER TRANSISTOR ‘THERMAL CHARACTERISTICS Cee |e || Caso | “Ambient > aa a Effective, 4 Die “CW Coupling Factors Q1-04 oF 02-03 [Te [2 | Refer to M2218 for graphs. Q1-02 or 03-04 (1) Raja is measured with the device soldered into a typical printed circult board. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [Characteristic Symbot | Min [tye [Mex [unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) [ Weniceo [| vac lic = 10 mAde, Ig = 0} Collector-Base Breakdown Voltage [ vencso | | — | ve lig = 10 wAdo, Ie = 0) Emitter Bese Breakdown Voliage [ veneeo | | Mig = 10 wAde, Ic = 0) Collector Cutoff Current [ - | (cp = 30 Vde, Ie = 0) Emitter Cutoff Current (Veg = 2.0 Vac, Ic = 0) ON CHARACTERISTICS(2) ih ‘DC Current Gain i {Ic = 10 mAde, Voce = 10 Vdc) 50 Al (Ig = 80 mAde, Ve = 10 Vdc} 60 “" Ug = 180 mAdo, Voce = 10 Vdo) 40 Fi ColectorEmitar Saturation Voltage [var | - [| =| at lig = 150 mAdg, Ig = 15 mAdo) : Gese-Emivor Soturation Voltage s | veer [| Vie lig = 180 mAde, Ig = 15 mAdc) ‘SMALL-SIGNAL CHARACTERISTICS . Current-Gain — Bandwidth Product 176 (ig = 20 mAdc, Voce = 20 Vde, f = 100 MHz) Output Capacitance - (eg = 10 Vado, Ie = 0, f = 4 MHz) - Input Capacitance - (Wag = 0.5 Vdo, Ic = 0, f = 1 MHz) (2 Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS: lj 5-120 H

MOTOROLA SC {XSTRS/R F} Wb vey 6367254 g08e445 & I i

6367254 MOTOROLA SC (XSTRS/R-F) 86D 82495 BD t

f T-43-385 : MAXIMUM RATINGS H | Cotector-Emitter Vottege | Veco | 20 de : i | cotlectorBeseVotege | Vengo | ao ae | [_EmiterseseVotege | Vewo | 40 | CASE bean rye 1 ! | Cotlector Current Continuous [te [600 | mA | . i Four : Esch | Transistors Teansistor_ [Equal Power| : Total Device Dissipation | @TA = 2C 065 1.25 | Wot % Derate ebove 25°C 5.18 80 | mwrc 1 otal Device Dissipation @Tc = BC ° | ae | Watts QUAD Derate above 26°C mWwec TRANSISTOR ! ‘Operating end Storage Junction | Ty, Tet 8510 +160 *c : [ranean en [ete] sere | | mn suicon ‘THERMAL CHARACTERISTICS unetion to | Junction to Refer to MPO2307 for graphs. Gase__| Ambient “Thermal Resistance(t) “ow Each Dio 193 | Effective, 4 Die 100 H Coupling Factor 1-04 or 02-03, 1-02 oF 03-04 (Junction to ambient date epplies for typical printed circult board mounting. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [characteristic OT Symbot Tin [tye [mex [unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) [ Weniceo | Vee (ic = 10 mAdo, Ig = 0) ig = 10 wAdo, Ig = 0} : lg = 10 wade, Ic = 0} Collector Cutoff Current |‘ | ! WWog = 30 Vde, le = 0) . Emitter Cutoff Current [0 | Wes = 2.0 Vdc, Ic = 0) ‘ON CHARACTERISTICS(1) DC Current Gain {ig = 10 mAdc, Voge = 10 Vde) 50 100 ig = 60 mAdc, VE = 10 Vde) 50 120 : {ig = 150 mAdo, Vee = 10 Ve} 40 8 Coltector-Emitter Saturation Voltage [ vozean | Vado) {ig = 150 mAdo, Ig = 15 mAde) {ic = 150 mAdo, Ig = 16 mAde) ‘SMALL-SIGNAL CHARACTERISTICS {ic = 20 mAde, Voe = 20 Vdc, f = 100 MHz) ‘Output Capacitance Wop = 10 Vdc, le = 0,f = 1 MHz) Input Capacitance Cibo 7 (Wee = 0.6 Vde, Ic = 0,1 = 1 MHz) : (1) Pulse Test: Pulse Width < 800 1s, Duty Gycle = 2.0%. i MOTOROLA SMALL-SIGNAL SEMICONDUCTORS | 3 5-121 :

Product Information

MPQ918 specifications and overview.

Summary

6367254 MOTOROLA SC (XSTRS/R F)

Description

6367254 MOTOROLA SC (XSTRS/R F)

Source title MPQ918 Datasheet(PDF) - Motorola, Inc

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