MPQ6610 MPS | Alldatasheet
Document overview
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Technical content
55V, 3A, Half-Bridge Power Driver, AEC-Q100 Qualified MPQ6610 Rev. 1.0 www.MonolithicPower.com 1 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved.
DESCRIPTION
The MPQ6610 is a half-bridge driver with current measurement and regulation features . It can operate from a 4V to 55V supply voltage , and can deliver up to 3A of output current (depending on the package, PCB design, and ambient temperature) . The MPQ6610 can be used to drive brushed DC motors, solenoids, or other loads. An internal current -sense circuit provides an output with a voltage that is proportional to the load current. Cycle-by-cycle current regulation and limiting are also provided. These features do not require the use of a low -Ohmic shunt resistor. Internal diagnostic and protection features include open-load detection, over-current protection (OCP), under-voltage lockout (UVLO), and thermal shutdown. The MPQ6610 is available in 8-pin TSOT23 and SOIC-8 packages. Note that due to the small pin spacing, the TSOT23 package is only recommended for applications up to 45V, unless conformal coating or encapsu lation is used.
FEATURES
Wide 4V to 55V Input Voltage Range 3A Maximum Output Current Internal Half-Bridge Driver Cycle-by-Cycle Current Regulation/Limiting Low On Resistance (High Side: 100mΩ, Low Side: 120mΩ) No Control Power Supply Required Simple, Versatile Logic Interfaces Inputs Compatible with 2.5V, 3.3V, and 5V Logic Over-Current Protection (OCP) Open-Load Detection Thermal Shutdown Under-Voltage Lockout (UVLO) Fault Indication Output Thermally Enhanced Package Available in TSOT23 and SOIC-8 Packages Available in AEC-Q100 Grade 1
APPLICATIONS
Solenoid Drivers Relay Drivers Brushed DC Motor Drivers All MPS parts are lead-free, halogen-free, and adhere to the RoHS directive. For MPS green status, please visit the MPS website under Quality Assurance. “MPS”, the MPS logo, and “Simple, Easy Solutions” are trademarks of Monolithic Power Systems, Inc. or its subsidiaries. TYPICAL APPLICATION BST VIN OUT ISET IN EN VIN MPQ6610 GND µC nFAULT
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 2 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number* Package Top Marking MSL Rating MPQ6610GJ-AEC1* TSOT23-8 See Below 1 MPQ6610GS-AEC1** SOIC-8 See Below * For Tape & Reel, add suffix –Z (e.g. MPQ6610GJ-AEC1–Z). ** For Tape & Reel, add suffix –Z (e.g. MPQ6610GS-AEC1–Z). TOP MARKING (MPQ6610GJ-AEC1) AVR: Product code of MPQ6610GJ-AEC1 Y: Year code TOP MARKING (MPQ6610GS-AEC1) MP6610: Part number LLLLLLLL: Lot number MPS: MPS prefix Y: Year code WW: Week code PACKAGE REFERENCE ISET VIN nFAULT IN BSTEN TOP VIEW TSOT23-8 GND OUT SOIC-8 TOP VIEW BST VIN OUT GND EN IN ISET nFAULT TSOT23-8 SOIC-8
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 3 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. PIN FUNCTIONS Pin # (TSOT23) Pin # (SOIC-8) Name Description 1 8 EN H-bridge enable input. Drive EN hig h to enable the half -bridge driver. The EN pin is pulled down with an internal resistor. 2 7 IN H-bridge input pin. Drive IN high to drive the output high. The IN pin is pulled down with an internal resistor. 3 6 ISET Current configuration resistor. Connect a resistor from ISET to ground to set the current limit and ISET pin voltage scaling. 4 5 nFAULT Fault indication. The nFAULT pin is an open drain. It is logic low if a fault condition (e.g. over-current protection [OCP], over-temperature protection [OTP], or open load) occurs. 5 4 GND System ground connection. 6 3 OUT Output terminal. 7 2 VIN Input supply v oltage. Decouple VIN to GND with a minimum 100nF ceramic capacitor. 8 1 BST Bootstrap pin. Connect a 100nF capacitor to the BST and OUT pins. ABSOLUTE MAXIMUM RATINGS (1) Continuous power dissipation (TA = 25°C) (2) ESD Ratings Recommended Operating Conditions (3) Operating junction temp (TJ) .... -40°C to +125°C Thermal Resistance (4) θJA θJC Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temp erature, TJ (MAX), the junction -to- ambient thermal resistance , θJA, and the ambient temperature, TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by P D (MAX) = (T J (MAX) - TA) / θJA. Exceeding the maximum allowable power dissipation can cause excessive die temperature, and the regulator may go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB.
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 4 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved.
ELECTRICAL CHARACTERISTICS
VIN = 24V, TA = -40°C to +125°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units Power Supply Input supply voltage VIN SOIC-8 package 4 55 V TSOT23 package 4 45 Quiescent current IQ VIN = 24V, EN = 0, no load current 1.3 5 mA Internal MOSFETs Output on resistance RHS VIN = 24V, IOUT = 1A, TJ = 25°C 100 120 mΩ VIN = 24V, IOUT = 1A, TJ = 125°C 120 200 mΩ RLS VIN = 24V, IOUT = 1A, TJ = 25°C 120 150 mΩ VIN = 24V, IOUT = 1A, TJ = 125°C 150 256 mΩ Body diode forward voltage VF IOUT = 1A 1.1 V Control Logic Input logic low threshold VIL 0.8 V Input logic high threshold VIH 2 V Logic input current IIN(H) VIH = 5V 6 14 µA IIN(L) VIL = 0.8V 4 µA Internal pull-down resistance RPD 530 kΩ nFault Output (Open-Drain Output) Output low voltage VOL IOUT = 5mA 0.8 V Output high leakage current IOH VOUT = 3.3V 1 µA Protection Circuits UVLO rising threshold VUV_RISE 4.1 V UVLO hysteresis VUV_HYS 300 mV OVP rising threshold VOV_RISE 55 65 V OVP hysteresis VOV_YS 900 mV Over-current trip level IOCP1 Sink 3 A IOCP2 Source 3 A Over-current deglitch time (5) tOCP 1 µs Over-current retry time tOCPR 1.6 ms Thermal shutdown TTSD 165 °C Thermal shutdown hysteresis ∆TTSD 15 °C Open-load current detection IOLD 90 µA Open-load detection threshold VOLD OUT = low 1 1.5 V OUT = high, VIN = 24V 21.5 23.2 Notes: 5) Not tested in production.
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 5 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS (continued) VIN = 24V, TA = -40°C to +125°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units Current Control Off time tITRIP After VITRIP is reached 16.5 µs Blanking time tBLANK 1 µs ISET current IISET HS source, IOUT = 1A 69 90 118 µA/A HS sink, IOUT = 1A 82 102 131 LS source, IOUT = 1A 83 104 130 LS sink, IOUT = 1A 82 103 129 Current trip voltage VITRIP At ISET pin 1.4 1.5 1.6 V
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 6 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. TYPICAL CHARACTERISTICS Quiescent Current vs. Temperature VIN = 24V VIN UVLO Rising Threshold vs. Temperature 0.8 0.9 1.1 1.2 1.3 1.4 1.5 -50 -20 10 40 70 100 130 IQ (mA) TEMPERATURE (°C) 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 -50 -20 10 40 70 100 130 VIN UVLO RISING THRESHOLD (V) TEMPERATURE (°C) OVP Rising Threshold vs. Temperature Current Trip Voltage vs. Temperature 58.5 59.5 60.5 61.5 62.5 -50 -20 10 40 70 100 130 OVP RISING THRESHOLD (V) TEMPERATURE (°C) 1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6 -50 -20 10 40 70 100 130 CURRENT TRIP VOLTAGE (V) TEMPERATURE (°C) ISET Current vs. Temperature High-side source current, IOUT = 1A ISET Current vs. Temperature High-side sink current, IOUT = 1A 88.5 89.5 90.5 91.5 -50 -20 10 40 70 100 130 ISET CURRENT (µA) TEMPERATURE (°C) 100 101 102 103 104 -50 -20 10 40 70 100 130 ISET CURRENT (µA) TEMPERATURE (°C)
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 7 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. TYPICAL CHARACTERISTICS (continued) ISET Current vs. Temperature Low-side source current, IOUT = 1A ISET Current vs. Temperature Low-side sink current, IOUT = 1A 101 101.5 102 102.5 103 103.5 104 104.5 105 -50 -20 10 40 70 100 130 ISET CURRENT (µA) TEMPERATURE (°C) 101 101.2 101.4 101.6 101.8 102 102.2 102.4 102.6 102.8 103 -50 -20 10 40 70 100 130 ISET CURRENT (µA) TEMPERATURE(°C) HS On Resistance vs. Temperature IOUT = 1A LS On Resistance vs. Temperature IOUT = 1A 100 105 110 115 120 125 130 135 140 -50 -20 10 40 70 100 130 HS ON RESISTANCE (mΩ) TEMPERATURE (°C) 100 110 120 130 140 150 160 170 180 -50 -20 10 40 70 100 130 LS ON RESISTANCE (mΩ) TEMPERATURE (°C)
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 8 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. TYPICAL PERFORMANCE CHARACTERISTICS VIN = 24V, EN = high, IN = 20kHz with 50% duty, RISET = 10kΩ, resistor + inductor load: 10Ω + 2mH, TA = 25°C, unless otherwise noted. Steady State Load to GND Steady State Load to VIN CH1: IN 2V/div. CH2: VOUT 20V/div. CH3: VISET 500mV/div. CH4: IOUT 500mA/div. CH1: IN 2V/div. CH2: VOUT 20V/div. CH3: VISET 500mV/div. CH4: IOUT 500mA/div. 20μs/div. 20μs/div. Power Ramping Up Load to GND Power Ramping Up Load to VIN CH1: VIN 20V/div. CH2: VOUT 20V/div. CH3: VISET 500mV/div. CH4: IOUT 500mA/div. CH1: VIN 20V/div. CH2: VOUT 20V/div. CH3: VISET 500mV/div. CH4: IOUT 500mA/div. 20ms/div. 20ms/div. Power Ramping Down Load to GND Power Ramping Down Load to VIN CH1: VIN 20V/div. CH2: VOUT 20V/div. CH3: VISET 500mV/div. CH4: IOUT 500mA/div. CH1: VIN 20V/div. CH2: VOUT 20V/div. CH3: VISET 500mV/div. CH4: IOUT 500mA/div. 10ms/div. 10ms/div.
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 9 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. TYPICAL PERFORMANCE CHARACTERISTICS (continued) VIN = 24V, EN = high, IN = 20kHz with 50% duty, RISET = 10kΩ, resistor + inductor load: 10Ω + 2mH, TA = 25°C, unless otherwise noted. Start-Up through EN Load to GND Start-Up through EN Load to VIN CH1: EN 2V/div. CH2: VOUT 20V/div. CH3: VISET 1V/div. CH4: IOUT 500mA/div. CH1: EN 2V/div. CH2: VOUT 20V/div. CH3: VISET 1V/div. CH4: IOUT 500mA/div. 200μs/div. 200μs/div. Shutdown through EN Load to GND Shutdown through EN Load to VIN CH1: EN 2V/div. CH2: VOUT 20V/div. CH3: VISET 1V/div. CH4: IOUT 500mA/div. CH1: EN 2V/div. CH2: VOUT 20V/div. CH3: VISET 1V/div. CH4: IOUT 500mA/div. 200μs/div. 200μs/div.
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 10 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. FUNCTIONAL BLOCK DIAGRAM Gate Driver Control Logic VREF Int. VCC LS Gate Drive V CP / Bootstrap EN µC MPQ6610 nFAULT UVLO OVP OTP Current Meas. ISET VIN VIN GND 1.5V Analog Current Reporting (Voltage) Current Regulation Comparator 100µA/A of Load Current BST OUT IN 15kΩ for 1A Current Regulation 1.5V/A Output Voltage OCP Open Load Detect. Figure 1: Functional Block Diagram
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 11 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. OPERATION The MPQ6610 is a half -bridge driver that integrates two N-channel power MOSFETs with a 3A current capability (depending on the package, ambient temperature, and PCB design). The device operates across a wide 4V to 55V input voltage range . It is designed to drive brushed DC motors, solenoids, or other loads. Current-Sense The current flowing in the low -side MOSFET (LS-FET) or high -side MOSFET (HS-FET) is sensed with an internal current -sense circuit. A voltage that is proportional to the output current is sourced on the ISET pin. The ISET pin voltage scaling is set by a resistor connected between the ISET pin and ground. For 1A of output current, 100 µA of current is sourced into the resistor connected to ISET. For example, if a 10kΩ resistor is connected between ISET and ground, the output voltage on the ISET pin is 1V/A of output current. The c urrent is sensed anytime that either the LS-FET or HS-FET is on. Current Limit and Regulation The current in the output is limited using constant-off-time (COT) pulse-width modulation (PWM) control circuitry. Figure 2 shows the device’s current regulation system, described below: 1. First, a MOSFET turns on and drives current through the load. 2. The current increases in the load, which is then sensed by the internal current-sense circuit. 3. If the load current reaches the current trip threshold, the output changes its state (if it was driving high, it goes low; if it was driving low, it goes high). 4. If the load current has fallen at 80% of the current limit threshold after a fixed off time (tITRIP), the original MOSFET is re-enabled. Then the cycle repeats. 5. If the current is still above this level, the off time is extended until the current falls to 80% of the current limit threshold. The current limit threshold is reached when the ISET pin reaches 1 .5V. For example, with a 10kΩ resistor connected from ISET to ground, the ISET pin voltage is 1V/A of output current. Therefore, when the current reaches 1 .5A, the ISET pin voltage reaches 1 .5V, and a current trip occurs. Blanking Time There is often a current spike while the MOSFET turns on, which can be caused by the body diode’s reverse recovery current or by the shunt capacitance of the load. Thi s current spike requires filtering to prevent it from erroneously shutting down the enabled MOSFET. An internal fixed blanking time (tBLANK) blanks the output of the current-sense comparator when the output is switched. This blanking time also se ts the minimum time for which the output remains high or low after the input has changed. tITRIP tITRIP tITRIP tITRIP tITRIP tITRIP EN OUT IOUT ITRIP - 20% ITRIP No ITRIP Decay < 80% of ITRIP Decay > 80% of ITRIP Figure 2: Current Regulation
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 12 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. Charge Pump and Bootstrap To generate the high-side gate drive voltage for the internal N -channel high-side MOSFET (HS- FET), a bootstrap capacitor is used in conjunction with an internal trickle charge pump. The bootstrap capacitor provides the high peak current required to switch the MOSFET quickly, and the internal trickle charge pump keeps the bootstrap capacitor charged during long periods when the output is not switching. Input Logic Each MOSFET in the MPQ6610 is controlled independently using the IN and EN pins (see Table 1). Table 1: Input Logic Table EN IN OUT 0 0 Hi-Z 0 1 Hi-Z 1 0 Low 1 1 High The input pins are designed such that they can be driven with a logic level voltage even when the main power to the device is inactive. Protection and Diagnostic Functions The MPQ6610 provides an nFAULT pin, which is driven active low if any of the protecti on circuits are activated. These fault conditions include over-current (OC) and over-temperature protection (OTP) , as well as open-load detection. nFAULT is not driven low if a current limit trip occurs. nFAULT is an open -drain output, and requires an external pull-up resistor. When the fault condition is removed, the nFAULT pin is pulled inactive high by the pull - up resistor. Over-Current Protection (OCP) If t he current through any MOS FET exceeds the over-current (OC) threshold for longer than the over -current deglitch time, an over -current fault is triggered. If an OC fault occurs, the state of the output is reversed until the current approaches 0A. Then both MOSFETs are disabled, and the nFAULT pin is driven low. The d river remains disabled for about 1.6ms, then is automatically re- enabled. OC conditions are sensed on both the high-side (HS) and low-side (LS) devices. OC conditions include a short to ground, to supply, or across the motor winding, which r esults in an over- current shutdown). Note that OCP does not use the same current-sense circuitry that is used for PWM current control, so it is independent of the ISET resistor value. Open-Load Detection When the output is in a high -impedance state (EN = 0), the internal circuits pull the OUT pin to VIN / 2 by a weak current. If a load is connected between OUT and ground, the n the load pulls the OUT pin close to ground. If a load is connected to VIN, then OUT is pulled close to the value on VIN. If t he voltage on OUT (VOUT) is almost VIN / 2, an open -load condition is detected, and the nFAULT pin is driven active low. The fault is cleared when EN is made active. Input Under-Voltage Lockout ( UVLO) Protection If the voltage on VIN (VIN) falls below the under- voltage lockou t (UVLO) threshold at any time , all circuitry in the device is disabled and the internal logic is reset. Once VIN exceeds the UVLO threshold, the MPQ6610 resumes normal operation. Over-Voltage Protection (OVP) If VIN exceeds the over-voltage protection (OVP) threshold, the device is disabled. Once VIN falls below the OVP threshold , the MPQ6610 resumes normal operation. Thermal Shutdown If the die temperature exceeds its safe limits, all MOSFETs in the H-bridge are disabled, and the nFAULT pin goes low. Once the die temperature drops to a safe level , the device automatically resumes normal operation.
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 13 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved.
PACKAGE INFORMATION
PACKAGE OUTLINE DRAWING FOR 8L TSOT23 MF-PO-D-0105 revision 3.0 FRONT VIEW NOTE: 1) ALL DIMENSIONS ARE IN MILLIMETERS. 2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSION, OR GATE BURR. 3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. 4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.10 MILLIMETERS MAX. 5) JEDEC REFERENCE IS MO-193, VARIATION BA. 6) DRAWING IS NOT TO SCALE. 7) PIN 1 IS LOWER LEFT PIN WHEN READING TOP MARKING FROM LEFT TO RIGHT (SEE EXAMPLE TOP MARKING). TOP VIEW RECOMMENDED LAND PATTERN SEATING PLANE SIDE VIEW DETAIL ''A'' SEE DETAIL ''A'' IAAAA PIN 1 ID See note 7 EXAMPLE TOP MARK
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 14 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. PACKAGE OUTLINE DRAWING FOR 8-SOIC MF-PO-D-0001, revision 3.0 0o-8o DETAIL "A" 0.010(0.25) 0.020(0.50) x 45o SEE DETAIL "A" 0.150(3.80) 0.157(4.00)PIN 1 ID 0.050(1.27) BSC 0.013(0.33) 0.020(0.51) SEATING PLANE 0.004(0.10) 0.010(0.25) 0.189(4.80) 0.197(5.00) 0.053(1.35) 0.069(1.75) TOP VIEW FRONT VIEW 0.228(5.80) 0.244(6.20) SIDE VIEW 1 4 8 5 RECOMMENDED LAND PATTERN 0.213(5.40) 0.063(1.60) NOTE: 1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN BRACKET IS IN MILLIMETERS. 2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. 4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.004" INCHES MAX. 5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA. 6) DRAWING IS NOT TO SCALE. 0.010(0.25) BSC GAUGE PLANE
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED MPQ6610 Rev. 1.0 www.MonolithicPower.com 15 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. CARRIER INFORMATION Pin1 1 1 1 1 ABCDABCDABCDABCD Feed Direction TSOT23-8 Pin1 ABCD ABCD ABCD ABCD1 1 1 1 Feed Direction SOIC-8 Part Number Package AEC1–Z TSOT23-8 3000 N/A N/A 7in 8mm 4mm MPQ6610GS- AEC1–Z SOIC-8 2500 100 N/A 13in 12mm 8mm
MPQ6610 – 55V, 3A HALF-BRIDGE DRIVER, AEC-Q100 QUALIFIED Notice: The information in this document is subject to change without notice. Users should warrant a nd guarantee that third - party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications. MPQ6610 Rev. 1.0 www.MonolithicPower.com 16 11/20/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved.
Revision History
Revision # Revision Date Description Pages Updated 1.0 11/20/2020 Initial Release -