MPQ6100 MOTOROLA | Alldatasheet
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MPQ6100, MPQ6I00A (suicon) MPQ6600, MPQ6600A QUAD DUAL-IN-LINE SILICON ANNULAR: COMPLE! MENTARY PAIR TRANSISTORS QUAD DUAL-IN-LINE _ 7 — SILICON pene eisai to VHF amplifier applications and com COMPLEMENTARY PAIR. . TRANSISTORS + Coser Gain Epaeltad — 100, ve 10 made + cavern le Bonaniah Product < ‘f= 125 MHz (Typ) @ Ic = 0.5 mAde NN Tearstor Sir 1 282489 or 22404 © PNP Transistor Similar to 2N3798 or 2N3799 ‘© MPQ6600,A Matching Characteristics Available as Specials on 01-04 and 02-03 MAXIMUM RATINGS. (P6100 | MPQ6100A | [ring [mor | rouse | nessa] on] [cancoremnvome | veeo | «| 8 | var_| [eatetoctow vows] ven [0 | vor [EmiverGewvorge | Ven [| 80 ve | A J - roms Deipeim TAT TD Taw Derate above 25°C 72 mw/°C — Power Dissipetion @ Tc = 25°C Watts ne erate above 25°C miw/°C 7 Pear ST ete ieee eet A rE ling Factors -O4 oF 02-03 a1 ies tos Tea pare aa Cates Tea Tae | CONNECTION DIAGRAM FEB Thess tees LA. ala] [td td eee sao 'MPQ6100, MPQ6100A ‘MPQ6600, MPQ6G00A cameees 851
MPQ6100,A, MPQ6600,A (continued) THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE in muitipie chip devices, coupling of heat between die occurs. Assuming equal thermel resistance for each die, equation (1) The junction temperature can be calculated as follows: smpiifies to () aT yy = Roy !Pp1 + Ko2PO2* Ke2P09* Koa PDA) (0 Tas Rex Por# Roz Kon P02 * Rea KeaFo3 For the conditions where Pp 1 = Pp2 = P3* Poa, Por =4Pp-
194 S04 Foe equation (3) can be further simplified and by substituting into
Where oT it the change in junction temperature of die 1 saeation (2) rents in Foy enru a tthe thermal reistance of diet tough 4 P01 thru 4 is the power dissipated in die 1 through 4 (4) Re(ere) © Roll + Koz + Ky3* Kgal/4 i mal coupling between de 1 an ie 2 throu imal resstence can be defined os ambient is used ata reference are given in the table on page 1 if ton Hstve package thermal reuntance can be defied es Sint oma spn cimtstsin tn coe ae sapesie . fence ofthe pockage shouldbe used 30 that lowest Bowie junction (2) Rovere) * sTay/PoT temperatures wil rele where: POT isthe total package power dissipation ELECTRICAL CHARACTERISTICS (1, = 25°C uniess otherwise noted.) Characteristic [_symbor_ [win [tye [max Tune) Coliector-Emitter Breakdown Voltage(7) measi00,6600 | 8Vceo Vae lig = 10 mAde, 1g = 0) mPa6100A,66004| Collecter Gave Breakdown Voltage 880 Uig= 10wAde, Ie = 0} Emitter Boxe Breakdown Voltage 8Ve80 Vae Ug = 10 Ade, 1g = 0) Collector Gutott Gurrent 1e80 nade (Veg = 80 Vée, 1e = 0) ON CHARACTERISTICS 11 (DC Current Gain We (ig = 100 uAde, Vog = 5.0 Vde} ‘Me 06 100,600 50 Fa P06} 008, 66008 100 200 lig 500 wade, Vcg « 5.0 Ve 1P.06100,6600 5 140 MPQ6100A,6600A 150 300 lig = 10 mAde, Vg « §.0 Vae) 1MP.06100,600 75 140 §MPa6100A, 66008 150 200 lig = 10 made, Veg = 5.0 Vde) ‘MPa 100,6600 60 no MP061008, 66008 125 26 Collector-Emitter Saturation Voltage. VCE(sat {ig = 7.0 mAde, ig = 100 wAde) Bose: Emitter Saturation Voltage Vecveat cr lig ® 1.0 mAdc, Ig = 100 wAde) DYNAMIC CHARACTERISTICS. Current-Gain—Bandwidth Product aa Ug = 500 uAde, Vce = 5.0 Vde, t= 20 MHz) Ousput Capecitance Cob (Veg = 5.0 Vee, Ie = 0,1» 100 kHz) PNP NPN Input Capacitance (Wee = 0.5 Vee, i¢= 0,4 = 100 kHz) PnP 80 NPN 80 ‘Noite Figure {ic = 100 wade, Vog = 5.0 Vde, Ag = 10 kohms, #5 10Hr to 15.7 kHz, BW = 10 Khe) (1)Pule Test: Pulm Width < 300.4, Duty Cycle < 2.0%, 852