MPQ6001 MOTOROLA | Alldatasheet

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MOTOROLA MPacoo2'N Cc ute a MPQ6502, QUAD DUAL-IN-LINE QUAD DUAL-IN-LINE SILICON ANNULAR® SILICON COMPLEMENTARY PAIR TRANSISTORS COMPLEMENTARY PAIR TRANSISTORS designed for high-speed switching circuits, DC to VHF amplifier applications and complementary circuitry. © Maximum Power Dissipation @ Ta = 25°C Pp = 1.25 Watts — MPQ6001,MP.6002,MPQ6501,MPQ6502 =0.9 Watts — MPQ6001N,MPQ6002N,MPQ6501N,MPQ6502N CASE 646 . i © DC Current Gain Specified ~ 1.0 to 300 mAde PLASTIC PACKAGE | t @ High Current-Gain—Bandwidth Product | ft = 400 MHz (Typ) @ Ic = 50 mAdc © NPN Transistor Similar to 2N2218 or 2N2219 AAA © PNP Transistor Similar to 2N2904 or 2N2905 ‘ Oo { © Compact Size Compatible with IC Automatic Insertion ja \\ Equipment ; —— | ba |e MAXIMUM RATINGS —- [ i [Rating J Symbotfvetue unit] i i ! I = Hope \\_ [Collector-Base Voltage ce | 6o vac | WY YEE [EmirterBaseVoltge ew [OL ae | i igi -[i-Seating le” ii Four Each | sistors [a fie.t6 {raa0 tors [or40 | nores Tran: Equal [eT 6.10 | 6.60 i 0240 [0.260 | Tawar 5 [o—poaetasrtoois Teas] (000s raoius oF TRUE Total Power Dissipation @ Tq = 25°C (1) Watts Pee safe] ere MPa6001, MPaEO02, MPd6SO%, MPa6S02 oss | 1.28 He eae eee Pane ar MAKIN MPQ6OOIN, MPQ6002N, MPQ6SO1N, MPQ6502NI} Os 09 7.831005 [0.072 |] MATERIAL CONDITION. Derate above 25°C mw/’c [9.200.307 008 To012 | 2. oIMENsiON “L” TO Meagoo1, MPas002, MPassor, Meagso2 sis | 10 Genrer oF ueans MPQ6001N. MPQ6002N, MPQ6501N. MPQ6502NI 4.0 7.2 fm} — {eT 0°} PARALLEL Total Power Dissipation @ Tc = 25°C Wars | | [#-[ ost {az coat fone] MPQ6001, MPQ6002, MPQ6S501, MPO6502 1.0 3.0 ‘Oost }-076 {0070 [0030 | MPQS001N, MPQ6OO2N, MPasSOIN, MPassozn| os2s | 24 a Derate above 25°C. mw MPa6001, MPA6002, MPA6SO1, MPa6s02 8.0 24 MPQ6001N, MPQ6002N, MPQ6501N, MPQ6S02ZN} 6.7 19.2 CONNECTION DIAGRAM [cveraina and Storose Junction Temperature Range | T4.Tsx erent Operating and Storage Junction Temperature Range | Ty.T, erating and Storage Junction Temperature Range | Ta." seq ° [| las O02, (1)Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 14] mM oO mM Mm sh THERMAL CHARACTERISTICS Ea Lk | Junction to | Junction to loa a3 Characteristic Case Ambient Thermal Resistance cw at a2, Cech Die | MPa6001, MPa6002, MPAGSO1, MPQ6SO2 128 193 MPaGOOIN, MPAGOO2N, MPQGSOIN, MPasSCaN 151 250 1 s 7m Effective, 4 Die ~ MPQ6001, MPQ6002, MPQ6501, MPQ6502 41.6 100 MPQ6501,N, MPQ6502,N MPQGOOIN, MPAGOO2N, MPOGSOIN, MPQGSO2N 52 134 wy ef & 8 oe Coupling Factors | MPQ6001, MPQ6002 30 60 meagso1, MPasso2 01.04 or 22.0: MPasSOIN, MPaGSOIN a a MPasoo1, MPa6002 20 2a ] arozy asos | MPA5501, MPasso2 |] | MPQ6001N, MPQ6002N 20 26 uuu od Ou MPOGSOIN, MPaGsOIN Ton BO * Annular Semiconductors Patented by Motorola tic QNCTOROLA INE. 14-3 OS 4557 R2

THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE In multiple chip devices, coupling of heat between die occurs. Assuming equal thermal resistance for each die, equation (1) The junction temperature can be calculated as follows: simplifies to - (3) 4Ty1 = Roy (Por + Ko2 Pp2 * Ky3?p3 * Koa Ppa) (1) aTy1 = Roa Pot + Rez Ko2 Po2 * Ra3 Ko3Pp3 31° Bor or * Bo2 "D2 * Bus! 03" oa "04 - + Roa Kad Ppa For the conditions where Pp 1 = Pp2 = Po3 = Ppa. Pot =4 Pp: 5 Where oT} is the change in junction temperature of die 1 equation (3) can be further simplified and by substituting into Rat thru 4 is the thermal resistance of die 1 through 4 equation (2) results in POI thru 4 is the power dissipated in die 1 through 4 (4) Ro(EFF) = Roa) + Kog + Kog > Koall Kg2 thru 4 is the thermat coupling between die 1 and die 2 through 4. Values for the coupling factors when either the case or the An effective package thermal resistance can be defined as ambient is used as a reference are given in the table on page 1. If follows: significant power is to be dissipated in two die, die at the opposite (2) Ra (erry = “Ta1/Por ends of the package should be used so that lowest possible junction where: Poy is the total package power dissipation. temperatures will result. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) [wwe emt mn ee Te OFF CHARACTERISTICS Colector-Emitter Breakdown Vottagelt ®VcEO Vee lic = 10.mAde. 1g * 0) Collector Bane Breakdown Voliage Vae ic = 10nAde, Ig =O! ‘Emitter Gase Breakdown Voltoge BVE8O Vae ig = 10 wAde, ic = 0) Coiecior Cutott Current (Wg * 50 Vac, ie «01 Emitter Gutoll Corrent = (eg 30 Vde. 1c * 01 ON CHARACTERISTICS (DC Current Gaintt) rE lig NO made, Veg = 10 Vase 1?06001.N - MPO6SOI.N 28 MPQ6OO2.N - MPOSSO2.N 50 lic + 10 mAée, Veg * 10-Vde) MPO6001.N - MPOSSOI.N 35 1we06002.N - PO6502.N 5 (ic = 150 made, Vee * 10 Vael MPC6001.N - MPO6SOI.N 40 /'MPQG002,N - MPQ6SO2.N- 100 ig + 200 mAde, Vee * 10 Ve) MPQGOO1N - MPQGSOIN 20 MPO6OO2.N - MPO6SO2.N 30 Gotietor Emitter Saturation Voltage (1) Vee teat vee {ig = 150 mAde, ig * 15 mAded ic = 300 mAde, ig + 30 mado! Base: Emitter Saturation Voltage (1) Vae teat vee ic 150 mde, tg = 18 made) 13 {ic = 300 mace, 1g = 30 made) 20 DYNAMIC CHARACTERISTICS ‘Current:Gain~Bandwidth Product (1) © lig = 60 made. Veg = 20 Ve. = 100MHE) ‘Output Capacitance pF (Wp * 10 Vde. 1g «0, = 100 Kite) PNP 80 NPN 80 Input Capacitance Cin (Weg = 2.0 Vde, 1c = 0, f= 100KH2} PNP 20 NPN v7 ‘SWITCHING CHARACTERISTICS Torn-On Tome ‘on (Nce = 30 Vee, Vag otf = 05 Vide, Ic = 150 made, gn = 15 mAde, Figure 1) Tern OH Time ‘ott Wc = 30 Vee, Ie + 160. mAde, lan= taz = 1SeAde, Figure 2) (irvine Test: Pulse Wiath $ 200 ws, Duty Cycle = 2% NPN SATURATED SWITCHING TIME TEST CIRCUITS For PNP Switching Tests, reverse the diodes, voltage polarities, and input pulses. FIGURE 1 — NPN TURN-ON TIME FIGURE 2 — NPN TURN-OFF TIME GENERATOR “Cs he if oscil nd test fi Ring time e 20 me Csistotal shunt capacitance of oxcioscope and test fixture + i ~ 10 to 100 us Ne —| p-<s.0ns Pw <200 4162V Duty Cycle <2.0% +9.9V v 619 zooaov 1000 200 +30 /S$<120F - Cs" $12 oF B 191 o-}-4e ~-FF-= 6 =k . 0.5 = Duty Cycles 2.0%|_} aay = Oscilloscope ~500us|--| “30 oscittoscore ty <5.0 ns : tS 5.005 (AA) MOTOROLA Semiconductor Products Inc.

MPQ6001,N @ MPQ6002,N © MPO6501,N @ MPO6502,N >} NPN DATA : FIGURE 3 — NORMALIZED DC CURRENT GAIN 5 so a ecto] 8 mee Pee tote HE — — —Vvee-1ov{_| 2 el ee 7

5 RR eS

g : CO PEs = ee ee x A eS or 3 osbot bee EES ESS nN a OS 2 GS Ic, COLLECTOR CURRENT (mA) FIGURE 4 — “ON” VOLTAGES FIGURE 5 — TEMPERATURE COEFFICIENTS. “ A ioeate CETTE us Leo i rs Ha A a ee rc 5 S. +08 a so TT TT Hi avcieveetnn tt tT

3 ICO 8 rT ac ohaeh |

Le eS HAI EE = “HHT tt

5 I Coit re eel

HH oe I bead | HTC 8 IN PT oS octet tet LT PI 05 10 20 5.0 10 2 50 100200 500 os 10 20 50 1 20 50 100200 500 NOISE FIGURE (VcE = 10 Vde, Ta = 25°C) FIGURE 6 — FREQUENCY EFFECTS FIGURE 7 — SOURCE RESISTANCE EFFECTS “ [Nevo TT TT TTA TT IS NOTH AN YA 50S sol —N [ic Lomal eof et NOE) SERUiGM yeah

3 IN ne Bs Aako 8 AUN PY)

3 NT Se NIST

fs . s A SUMS UIE sss PSE eer i; Tot fi H LULL THIET, coef acini ,) 1, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (k OHMS) (A) MOTOROLA Semiconductor Products Inc.

MPQ6001,N @ MPO6002,N @ MPQ6501,N ¢ MPQ6502,N NPN DATA FIGURE 8 — CURRENT-GAIN — BANDWIDTH PRODUCT” “FIGURE 9 — CAPACITANCE = @COO Toe "TTT Tan Ameena Zool [voe-n0v IT TT TT) =< an pe EN ee ‘i

2 CU ei LT st rie [|

2 ao I Ts | MT

3 SSS ag Bh ins

2 DESAI ee HS

s COCCI) Ea SH CAE RR SH BLY ~ ACHES Ecce “a 0203 05 10 20 30 5.0 0 2 30 Mor 02 03° 05 10 20 30 «50 10 20 Ig, COLLECTOR CURRENT (mAdc) REVERSE VOLTAGE (VOLTS) SWITCHING TIME CHARACTERISTICS. FIGURE 10 — TURN-ON TIME FIGURE 11 — CHARGE DATA 200) y 10.000 FS CONT oo Ln SSS Nee GUCTIMMM se) EE S28 Sas ar NS all K t e/ls= 10 EE vec ~ sviunness nore athe WORN RTT Sa |_| meal ae PAR Se i a a= = LENNIE nts nore von TM al FIN Newer p00 te Ey, TOTAL CONTROL: 2 , SSS eee ors A Z ARES PT sa Se

5 NN Ny NI SB Eee Si lowoan ees} ae

CPIASNODRE A, TESS ete = NES ian a er oL LTTE | LIN aD ij 3.0 50 10 2 30 50 100 200 300 30 $0 70 10 20 wo 3070 100 200 300 Ic. COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) FIGURE 12 — TURN-OFF TIME 300 300 — Se SS A <a rs mo KSEE TRH 20 mores ASH ESET Chae Bw ON LN ToS 2 wl N UN LI SH 2 r Fe 2 27” eee 5 NS NSE SE Zz” PN Ss 2 ON 2 of — 1 N Sn oS 2 NOR = 50 Py 2 meer eacs a [T] Fe A DG a SD Po fee Ng [eee oO 3° HENH i a oj ~ oT TTT Te ; SE oot —|— | == cowaawrvees | | |]i hs [Sd win cain tees || in “eT TTT a 0 a 705 300 “o a 20030 tc. COLLECTOR CURRENT mA) Jc. COLLECTOR CuF#ENT ore (AA) MOTOROLA Semiconductor Products Inc.

PNP DATA ° FIGURE 13 — DC CURRENT GAIN 20 ~ — | iy | EE et tt. PERCE Z LE Lh ef oN BRST EE ESSN z op ee yA | (ESSE tree

3 Leer ras

: wee Cee CET Sa Py —— Vee = 109 IN & To ELLE eee NSA = “FFE Litt | Trt Titi fT Tit | Tih PTR ars OF 10 20 30 50 70 10 20 30 50 70 100 200 300 500 Je, COLLECTOR CURRENT (mA) FIGURE 14 — "ON" VOLTAGES FIGURE 15 — TEMPERATURE COEFFICIENTS 20 +20 TTT TTT TT) TT TE TT \\s PETER ee ao TET CTT LUTTE Y La ATT TPT TTT TT z SEA TRRIIIMRATETITTIBE(Ah eee eI at essere TTT TT Bo eee TTT | te @ ee 10H] Bo Lf rT Th SRI eT oe CMT atnereainimeaue oA eC TTT | LT Trcemarern = mL TT iN ATED EHALILIMAAl Aiimesseec ime i Soll HET TE 3.0 05 10 20 50 10 0 50 100-200 500 05 10 20 50 10 20 so 100 200 © 500 Je, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) NOISE FIGURE (VcE = 10 V, Ta = 25°C) FIGURE 16 — FREQUENCY EFFECTS FIGURE 17 — SOURCE RESISTANCE EFFECTS se Pee . nave. tate (maw ani so HE LLIN Zl REC EAIET h C Hie He All T =z {\\ eo AIT KL Nt ECL Hl SO LEUNETIET TTT TUTTI eo Ni N xi i B COSMET esem COT Neri Mibu fi BCLS § AAUTTIN lh RSS TIES Seco ENE ro SHOT 29 sll AH ea EEE cea HH il in * CCCI ot CI Cn Ol 02 05 10 20 5.0 0 20 50 100 Or 02 05 10 20 $.0 Ww 20 $0 (100 1, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (k OHMS) (AA) MOTOROLA Semiconductor Products Inc.

MPQ6001,N @ MPQ6002,N ¢ MPQ6501,N e MPQ6502,N PNP DATA . FIGURE 18 — CURRENT-GAIN BANDWIDTH PRODUCT FIGURE 19 — CAPACITANCE ‘ 600, 0, =e HU TT Titi tet Tr Sain | |] 2 goo Lf vce-ove | TTT TT [eH T= 350 | ETT t= 30 Mie CU 20 meat — f= 100 kHz Z Js Hee g merle ti [| com Let Ts TUTE ST E 200 | 2 0 aw 2 7 Fe SANS r= | 3 a A | z 7 Fr ae eZee ee esses a es 50 PN & ota ein aot rit tera _L TTT TT TTT £ Os 10 20 30 $0 70 10 2 30 50 02 03 05 07 10 20 3.0 50 7.0 10 20 Ic,COLLECTOR CURRENT (MA) Vr. REVERSE VOLTAGE (VOLTS) FIGURE 20 — TURN ON TIME FIGURE 21 — CHARGE DATA 500 5000 = CTT ooo Cea eR CECT Fr) SS a a 20 Ha oer NR iolg=10 | CUT TT Ar [| PESTO TTE SCOTT) gal LA Pocono [TT

2 RRS SER ~

~ SSS eee et 8 oO Ae or 4] EB PN tS So EEE EE Ea CZ) , - so tN SINS) Se PO a LITT NR OISAERETTT Tr ¢ Tarr ee wo LLUTTNE BNE EET wo TTT ar COT RESINS 200 eee a no CLT _ESTSISEP RE} ao CO eo HE TONES eer [ea,Acrivenesioncuancel [TIT TTT 1 LH TTT TTT wT TTT TT FT 5070 10 20 30 50 70 «100 200 300 = 500 $0 70 10 2 30 50° 70 100 200 300 500 Ic, COLLECTOR CURRENT (mA) Ic. COLLECTOR CURRENT (mA) FIGURE 22 — STORAGE TIME. FIGURE 23 — FALL TIME CT Tee ‘on MUTT TT HHH TAF so LU TT oN IS TTT rr COE MESSE

200 HPAES i a PES SC cea

, He Pog ee eee s oll TTT TTT tel) 2 LOIN EN vam RR ty se B10 EES EERS ote =20 Sy EH EE Soy PEER ENE et EH = ee a Ge 0 | = ee ae ee 2 5 [ea = 0 — eae = soft Sa ie ay SHH EPR HH SPE sete TTT TTT TT PRN wo LT eee a CS eee COC eT » Hee Coot 20 il COTS ere CIC ICE | Mery 70 10 2 30 ©5070 100 200 300 00 aor) 70 10 20 3050 70 (100 200 300 500 / Ic, COLLECTOR CURRENT (mA) Ic. COLLECTOR CURRENT (mA) (AA) MOTOROLA Semiconductor Products Inc.