MPQ3303

MPQ3303 MOTOROLA | Alldatasheet

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MOTOROLA SC EXSTRS/R FF do DEpeabresy ansesis 3 fj | : 6367254 MOTOROLA SC C(XSTRS/R F) 96D 82498 BD : MPQ2906, 2907 For specitications, see MHQ2906 Data. T-4¥3-aS : MAXIMUM RATINGS: i ee oT MPQ3303 [cotecatanestatage [egg | as wae] |) CASE 640-06, STYLE 1 -[ entorse Vote [Vago | a0 ve | To-ti6 : Four : ara y | Equal Power| Total Device Dissipation A @Ta = 28°C 650 mW 1 Derate above 25°C 52 mwWrc : Total Device Dissipation QuaAD j Te = 26°C Watt: gene. PT ae | ae [me] | swrcnind Atsisron ‘THERMAL CHARACTERISTICS Junction to ; - Ambient Thermal Resistance Each Die. 193" “cw Effective, 4 Die 100* “cw Coupling Factors Q1-04 or 02-03 Q1-Q2 or 03-04 (1) Raja is measured with the device soldered into a typical printed ‘circuit board. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) ee cma [Smet [wn [tp [mm [0] OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Variceo | 12 Vee (ig = 10 mAde, Ip = 0) Collector-Base Breakdown Voltage Vode (ig = 100 Ade, Ig = 0) Emitter Base Breokdown Voltage VIBRIEBO Vee (ig = 100 pAde, Ic = 0) Collector Cutoff Current Ade (ce = 15 Vdo, Vee = 0) a GaanAcTENSTES i DC Current Gain ‘bre . lig = 100 mAdo, Vce = 0.5 Vde) 45 (ig = 300 mAdo, VcE = 0.5 Vdc) 55 a tacaee ot Veen . (ic = 300 mAdo, Ig = 30 mAde) 0.33 {ig = 1.0 Ade, Ip = 0.1 Adc) 07 Base Emitter Saturation Voltage Veetsat) (ig = 300 mAdc, Ip = 30 mAdc) lig = 1.0 Ade, Ip = 0.1 Ade} ‘SMALL-SIGNAL CHARACTERISTICS ‘Current-Gain — Bandwidth Product tr (ig = 100 mAdc, Vce = 5.0 Vie, f = 100 MHz) ‘Output Capacitance (Vcp = 5.0 Vde, le = 0, f = 1 MHz) Gp tania a (pe = 0.6 Vde, ic = 0, f = 1 MHz) SWITCHING CHARACTERISTICS ‘Turn-On Time: ton Wee = 12 Vde, ic = 1.0 Ade, Vee(otf) = 4.0 Vde, Igy = 100 mAde) ‘Turn-Off Time toff * (Vcc = 12 Vde, Ic = 1.0 Ade, Igy = !g2 = 100 mAdc) . MOTOROLA SMALL-SIGNAL SEMICONDUCTORS. : 5-124 ‘ _ ee

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6367254 MOTOROLA SC CXSTRS/R F) 96D 82543 D ;

CASE 20-03, STYLE 5 TO-72 (TO-206AF) 3 rain 4.cose : MAXIMUM RATINGS of) [DreinSourcevetuge | Vos | 28 [ae an *Souce [DroinGateVotuge | Mog =| 28 | vee Roverse Gate-Source Voltage re JFET [Foard Gate Curent | tage | 10 | made SWITCHING “otal Device Dissipation @ Ta = 26°C mW Derate above 25°C mwrc P-CHANNEL — DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) a 1 OFF CHARACTERISTICS Gate-Source Breekdown Voltage ‘Ver)Gss Vae lig = 1.0 #Adc, Vps = 0} ‘Drain Reverse Current WVpa = —18 Vdc, Is = 0) nade (Wpg = —16 Vde, Is = 0, Ta = 150°C) Ade Drain Cutoff Current (ps = —10 Vde, Veg = 10 Vdc} 23993, 2N3999A, 12 nade (ps = ~10 Vde, Veg = 6:0 Vae) 2N3998 12 (Vps = -10 Vde, Vgg = 10 Vde, Ta = 160°) 2N3993, 2N3993A 1.0 Ade (pg = —10 Vde, Veg = 6.0 Vdc, Ta = 180°) 2NN3894' 10 Gate Source Voltage Ves (ps = —10 Vde, Ip = —1.0 wAde) 2N3983, 2N2993A 95 2N2098 55 ON CHARACTERISTICS. Zero-Gate-Voltage Drain Current(1) 1 (os = 10 Vde, Vgg = 0) ‘23993, 2NGOSSA. 2N3994 ‘SMALL-SIGNAL CHARACTERISTICS : Drain-Source “ON” Resistance Tason) Wes = 0, Ip = 0,f = 1.0 kHz) 263983, 2N3993A, 160 2N3994 300, Forward Transfer Admittance(1) (Vps = 10 Vde, Vgg = 0,f = 1.0 kHz) 2N3993 60 2N3993A, 70 2N3904 40 Input Capacitance Ciss Wps = —10 Vde, Vgg = 0, f = 1.0 MHz) 2Na983, 2N3994 2N39934, Reverse Transfer Cepacitance Css ' (ps = 0, Veg = 10 Vde, f = 1.0 MHz) 2N3993 45 | ‘2N3993A 30 | Wp = 0, Veg = 6.0 Vde, f = 1.0 MHz) 2N3084 60 {Ay Pulse Test Pulse Width = 100 me, Duty Gyele = 10%. a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 615

MOTOROLA SC {XSTRS/R FF Sb pe uaezesu go&2b03 7? rT

6367254 MOTOROLA SC (XSTRS/R F) 96D 82603 D

i | CASE 20-03, STYLE 2 TO-72 (TO-206AF) 1 rain i MAXIMUM RATINGS: [Rating Simbot_[vetue [unit _ | 3 ‘ [DrainsourceVotues | os =| =98 | woe Gwe Case [Dreincatevotger | Vo | 280 | veo | sll, [Drainurent® | to | 80 mate | 2 seurce Total Device Dissipation @ Ta = 25°C ‘300 mW [Tsuarsaeperersse [fo | a | tee | MOSFET AMPLIFIER AND SWITCHING Storage Channel Temperature Range? | Taig | -0510 +175] *o | P-CHANNEL — ENHANCEMENT JEDEC Registered Limite ELECTRICAL CHARACTERISTICS (Ta = 25°C uniess otherwise noted.) a Drain-Source Greskdown Voltage {ip = ~ 10 wAdo, Vg = Vs = 0) [ vemosx [35 [ — [= J veo | Zero-Gate-Voltage Drain Current (Vpg = —16 Vdc, Vgs = 0) nAde (ps = 35 Vdc, Ves = 0) Ade Gate Reverse Current” (Veg = +25 Vado, Vos = 0) +10 | pAde (veg = +80 Vee, Vos = 0 +10_| nade input Resistance (Weg = - 25 Vée) [aos | = ftxrort2] =| onme | Gate Source Voltage” vae (Wps = —15 Vdc, Ip = —0.5 mAde) ‘3N187, anise Gate Forward Current* (Vgs = —25 Vde, Vps = 0) -10 pAdc (Vgs = —50 Vde, Vps = 0) 10 nAdc (Was = -26 Vde, Vos = 0, Ta = +58°C) -0 nAde (Vgg = —50 Vue, Vps = 0, Ta = +55°C) =10 Ade ON CHARACTERISTICS ! Gato Threshold Voltage* Vasith) : (ps = ~18 Vde, Ip = ~10 Ade) aNi7 aNi6e . On-State Drain Current™ Wos = —18 Vde, Veg = ~10 Vée) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance* Mts! amhos (ps = ~18 Vdc, Ip = -2.0 mAdc, f = 1.0 kHz) Output Admittance* Wos! (ps = 15 Vado, Ip = -2.0 mAdc, f= 1.0 kHz) Input Capacitance* Ciss (ps =. —15 Vee, Vag = 0, f = 140 kHz) Reverso Transfer Capacitance* Wpg = 16 Vie, Vag = 0,f = 140 kHz) Drain-Substrate Capacitance 4.0 (p(sus) = ~ 10 Vde, f = 140 kHz) Noise Voltage NIV ‘Rs = 0, BW = 1.0 Hz, Vps = ~15 Vde, Ip = -2.0 mAde, f = 100 Ha) (Rg = 0, BW = 1.0 Hz, . Vps = —15 Vde, lp = —2.0 mAde, f = 1.0 kHz) *JEDEC Registered Limits Se ! MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-75

MOTOROLA SC {XSTRS/R Ft 46 DE eae7254 onsenou a ff

6367254 MOTOROLA SC (XSTRS/R F) 96D 82604 D

3N187, 3N158 T-37-as FIGURE 1 — FORWARD TRANSCONDUCTANCE FIGURE 2 — OUTPUT TRANSCONDUCTANCE EEE 0 SSS SS =e SSS eae fom —— er HE ere z eS a OO 8 ny as NO al | Bee Ee ecice o j vot] i pe g cee a 5 oe rt ian) pg ee pe CI PTE Io. ORAIN CURRENT ima} Ip, ORAIN CURRENT (mA) . | FIGURE 3 — FORWARD TRANSCONDUCTANCE FIGURE 4 — BIAS CURVE versus TEMPERATURE ° aS 6 | ‘COPEL 0 == ======SSs=s REESE) epee Pe CCC TTT) iS ee eS Foes Pe ee ee ERA? BREE EER SESS a i FIGURE 6 — “ON” DRAIN-SOURCE VOLTAGE FIGURE 6 — EQUIVALENT INPUT NOISE VOLTAGE 34 4 FA SS ¢ HA Ses CSS COMMS | LUI ITI TTT

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6367254 MOTOROLA SC (XSTRS/R F) 96D 82605 D :

3N187, 3N158 T-37-as . ‘ SWITCHING CHARACTERISTICS | (Ta = 25°C) . FIGURE 7 — TURN-ON DELAY TIME FIGURE 8 — RISE TIME ae reps ya | = aS z HE Hess te z Oy = of LO Pie ee ee Fe ee E A SST : 3 eee Ee Leet j RH OS He | 5 Eb voce ves--1ovine-t9y—— vou Vos: 10v-t=FH4 o-oo tH SEE Oe ce a ee ST) 20 ae “8 “9 20 a) 10, ORAM CURRENT ia 1, DRAW CURRENT fA FIGURE 9 — TURN-OFF DELAY TIME FIGURE 10 — FALL TIME a a Se Ss | So a a eS ee AS ee a EEA eo LH Fo PA tg SN | —— terol || Sd es 20 ‘Sa E gf SS Sd Po RRAR EI ft == So—— HE i LSet 2 == — sf EE 2 Eee Se = 2 — el a ee ee ee . RSPR RS SSH 3 o SERRA SSE CEPR 2 EE SSE ae ee TH t+ SF SSSeky 5 eaSa=s: [verve ESBS pee ee ae ee EPPS 4 === wL LET tT 8 a0 25 0 “0 48 ry 28 ey 70 fo, AIN CURRENT tn) to, RAIN CURRENT fat FIGURE 11 — SWITCHING CIRCUIT and WAVEFORMS: ‘, ‘The switching characteristics shown above were measured bal in a test circuit similar to Figure 11. At the beginning of the om mm switching interval, the gate voltage is at ground and the gate SET Vps=10V 17 cuTPUTTosau@uine source capacitance (Cys * Crss * Cres) has no charge. The drain Osci.Lescore voltage is at Vpp and thus the feedback capacitance (Crss) Is WOW 0 charged to Vpp. Similarly, the drain substrate capacitance (Cajsub)) is charged to Vpp since the substrate and source are connected to ground. During the urn-on interval Cge fs charged to Vas (the input ’ voltage) through Rg (generator impedance) (Figure 12). Crs, 1 = TN 17 vevssna __‘MstBodatharsedo Vs Von) tvoush Rg ad ie a ‘ aces allel combination of the load resistor (Rp) end the channel . aurvovereszo% Tesistance (rds). In addition, Cdjgub) is discharged to a low Velue Vpfon) through Rin paalel with rgg- During turn-off sav wa be this cherge flow is reversed. © ————— Predicting turn-on time proves to be somewhat difficult since 10%. ‘the channel resistance (rds) is @ function of the gate source a voltage (Vgg). As Cys becomes charged Vgs is approaching Vos Vin and rg decreases (see Figure 6) and since Crsg and Cd(sub) fate charged through rae, turn-on time is quite nensinear. we tthe charging time of Cag fs short compared to that of Cras ov ‘and Ca(sub}- then rs (which is in parallel with Rp) will be low \\ \\ Le ‘Compared t6 Rp duting the switching interval and wil largely " " determine the turn-on time. On the other hand, during turn- off rds will be almost an open circuit requiring Crs and Ca(sub) _ it to be charged through fi and resulting In aturn-of time that FIGURE 12 — SWITCHING CIRCUTT with MOSFET is long compared to the turn-on time. This is especially no- va ticeable for the curves where Rg 0 and Cgg is charged through the pulee generator Impedanes ony. fo ‘The switching curves shown with Rg * Rp simulate the J eK ‘switching behavior of cascaded stages where the driving Tt re vs source impedance is normally the same as the load impedance. b: Cys 8 ‘es Cota ‘The set of curves with Rg +0 simulates @ low source impedance Ft --4--FO- rive such es might occur in complementary logic circuits, a ___

4 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS

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