MPMD100B120RH MGCHIP | Alldatasheet

Document overview

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Technical content

Features

 BVCES= 1200V  Low Conduction Loss : VCE(sat) = 2.7V (typ.)  Fast & Soft Anti-Parallel FWD  Short circuit rated : Min. 10us at TC=100℃  Isolation Type Package

Applications

 Induction Heating, Motor Drives, High Power Inverters  Welding Machine, UPS 7DM-3 General Description MagnaChip’s IGBT Module 7DM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are ideally suited for IH, High Power inverters, Motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit E301932

March 2013.Version 2.0 MagnaChip Semiconductor Ltd. 2 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Electrical Characteristics of IGBT @TC =25 o C(unless otherwise specified) Characteristics Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Collector-Emitter Breakdown Voltage BVCES IC = 1mA, VGE = 0V 1200 - - V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 2mA 4.5 - 7.5 Collector Cut-Off Current ICES VCE = 1200V, VGE = 0V - - 1 mA Gate Leakage Current IGES VGE = ±20V, VCE = 0V - - ±250 nA Collector-Emitter saturation voltage VCE(sat) VGE = 15V, IC=100A TC=25℃ - 2.7 3.2 V TC=100℃ - 3.3 - V Dynamic Characteristics Total Gate Charge Qg VCC = 600V, IC = 100A, VGE = ±15V - 400 - nC Gate-Emitter Charge Qge - 44 - Gate-Collector Charge Qgc - 236 - Input Capacitance Cies VCE = 30V, VGE = 0V, f = 1.0MHz - 4760 - pF Output Capacitance Coes - 518 - Reverse Transfer Capacitance Cres - 175 -- Turn-On Delay Time td(on) VCC = 600V, IC =100A, VGE =±15V, RG = 10Ω, Inductive Load - 135 - ns Rise Time tr - 60 - Turn-Off Delay Time td(off) - 450 - Fall Time tf - 70 - Turn on Switching Loss Eon - 6.7 - mJ Turn off Switching Loss Eoff - 6.0 - mJ Total Switching Loss Ets - 12.7 - mJ Short Circuit Withstand Time Tsc Vcc = 600V, VGE = ±15V RG = 10 Ω @ Tc = 100℃ 10 - - us Electrical Characteristics of FRD @Ta =25 o C(unless otherwise specified) Diode Forward Voltage VFM IF=100A TC=25℃ - 2.9 3.5 V TC=100℃ - 2.3 - Diode Reverse Recovery Time trr IF =100A, VR=600V, di/dt = -200A/us TC=25℃ - 100 - ns TC=100℃ 220 Diode Peak Reverse Recovery Current Irr TC=25℃ - 5 - A TC=100℃ - 15 - Diode Reverse Recovery Charge Qrr TC=25℃ - 250 - nC TC=100℃ - 1650 -

March 2013.Version 2.0 MagnaChip Semiconductor Ltd. 3 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Thermal Characteristics and Weight Characteristics Symbol Min. Typ. Max. Unit Junction-to-Case(IGBT Part) RθJC - - 0.16 ℃/W Junction-to-Case(DIODE Part) RθJC - - 0.40 ℃/W Case-to-Sink ( Conductive grease applied) RθCS 0.05 - - ℃/W Weight of Module Weight - - 360 g

March 2013.Version 2.0 MagnaChip Semiconductor Ltd. 4 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Fig.6 Typical turn-off energy = f(RG) VGE = ±15V, IC = 100A, VCE = 600V Fig.5 Typical turn-on energy = f(RG) VGE = ±15V, IC = 100A, VCE = 600V Fig.1 Typical Output Characteristics Fig.2 Typical Output Characteristics Fig.4 Gate Charge Characteristics Fig.3 Typical Saturation Voltage Characteristics 0 1 2 3 4 5 6 100 150 200 250 300 Common Emitter TC=25℃ 12V 15V 20V 10V Collector Current, IC[A] Collector-Emitter Voltage, VCE[V] 0 1 2 3 4 5 6 100 150 200 250 300 10V 12V 15V 20V Common Emitter TC=125℃ Collector Current,IC[A] Collector - Emitter Voltage,VCE[V] 0 1 2 3 4 5 6 100 150 200 250 300 Collector Current,IC[A] TC=25℃ TC=125℃ Collector-Emitter Voltage,VCE[V] 0 100 200 300 400 500 VCE=600V,IC=100A TC=25℃ Gate-Emitter Voltage, VGE[V] Gate Charge, Qg[nC] 0 5 10 15 20 25 30 Eon(TC=25℃) Eon(TC=125℃) Eon[mJ] RG[Ω ] 0 5 10 15 20 25 30 Eoff(TC=25℃) Eoff(TC=125℃) Eoff[mJ] RG[Ω ]

March 2013.Version 2.0 MagnaChip Semiconductor Ltd. 5 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Fig.7 Rated Current vs. Case Temperature Fig.8 Power Dissipation vs. Case Temperature Fig.9 Transient Thermal Impedance Fig.10 Forward Characteristics 0 1 2 3 4 5 100 150 200 250 300 TC=25℃ TC=125℃ Forward Current, IF[A] Forward Drop Voltage, VF[V] 0 20 40 60 80 100 120 140 160 100 120 140 160 180 200 TJ = 150℃ VGE ≥ 15V Collector Current,IC[A] Case Temperatute, Tc[℃] 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 700 800 900 1000 TJ≤ 150℃ PD=f(TC) Power Dissipation[W] TC[℃] 1E-5 1E-4 1E-3 0.01 0.1 1 10 1E-4 1E-3 0.01 0.1 TC=25℃ FRD IGBT Thermal Response Zthjc[℃/W] Rectangular Pulse Duration Time[sec]

March 2013.Version 2.0 MagnaChip Semiconductor Ltd. 6 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module Package Dimension 7DM-3 Dimensions are in millimeters, unless otherwise specified TBD TBD

March 2013.Version 2.0 MagnaChip Semiconductor Ltd. 7 MPMD100B120RH NPT & Rugged Type 1200V IGBT Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry withou t notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.