MPM3002 MOTOROLA | Alldatasheet
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MOTOROLA SC (XSTRS/R F) EAE D MM 6367254 0098454 301 MNOTE MOTOROLA ms SEMICONDUCTOR Saag TECHNICAL DATA Advance Information MPM3002 TMOS ICePAK Power Module P-Channel Power MOSFET and N-Channel SENSEFET™ Product in a ‘MOS POWER MOSFET Full H-Bridge Configuration H-BRIDGE
100 VOLTS
The MPM3002 is a H-Bridge power circuit with lossless current sensing capability. The 8 AMPERES upper legs of the bridge consists of P-Channel power MOSFETs and the lower legs of the bridge consist of two SENSEFET devices. This power circuit packaged in the ICePAK package is ideal for applications such as servo motor drives, stepper motor controls and switching power supplies. Features of this product include: @ P and N-Channe! Power MOSFET Configuration for Ease of Drive 12 © Lossless Current Sensing in Each Lower Leg of the H-Bridge “HZ S) ® Isolated Package with 2 kV Isolation Voltage Rating LZ; © High Power Handling Capability — 62.5 Watts tig @ High Peak Current Handling Capability — 25 Amperes 2 CASE 806-05 MPM3002 Schematic
20 CASEQ 129
[_ or rs rs Gees | | a | as | | | No | l dp-4--4t- | ! 200 pF 200 pF 010 | 08 | | | | | | 4 | | ° tT ! ° EF Laas 59° 60 70 bo KELVIN. SOURCE Ths document contains informabon on a new product. Speatications and information herein are subject to change without notice eee MOTOROLA TMOS POWER MOSFET DATA 3-60
MOTOROLA SC (XSTRS/P F c PF) bee D MM 6367254 0098455 248 MMOTL MPM3002 MAXIMUM RATINGS (T = 25°C unless otherwise noted) Drain-to-Source Voltage (All Types) [Voss | 100 | Volts: Drain-to-Gate Voltage (Rgs — 1MQ) (All Types) Gate-to-Source Voltage {All Types) Drain-to-Mirror Voltage (Q2 and a3) | Vom 100 | Gate-to-Mirror Voltage (2 and 03) 20 Drain Current — Continuous (02 and Q3) 'D ‘Amps —Puised ‘om — Continuous {01 and Q4) ip 8 — Pulsed ‘pM | 26 — Continuous (N/P-Channel Combination) | 8 — Pulsed ibm 6 Sense Current — Continuous (Q2 and 03) — Pulsed RMS Isolation Voltage (Any Pin to Case) [viso__| 2000 | Volts__| Operating and Storage Temperature Range Ty. Tstg THERMAL CHARACTERISTICS Power Dissipation — Tc = 25°C Watts (Any single device) 625 (Q1 and Q3 or 01 and 4 or Q2 and Q3 or Q2 and 04 "On") 625 (Q1 and G2 and/or Q3 and Q4 “On") 31.25 Power Derating — Derate above Tc = 25°C VR@JC wre (Any single device) 08 (Q1 and 3 or Q1 and Q4 or Q2 and Q3 oF Q2 and Q4 On") 05 (Q1 and Q2 and/or O3 and 04 “On”) 0.25 Thermal Resistance — Junction to Case Roc 2 “cw —Junction-to-Ambient Raa 35 Thermal Coupling Coefficient {Qt to Q2 or Q4 to 03) a = See Table 1 {01 to 03, 01 to 44, 02 to 03 or Q2 to 04) 6 Maximum Lead Temperature for Soldering Purposes TL 260 c 4/8" from case for 5 seconds | ELECTRICAL CHARACTERISTICS (T, = 25°C, Vag = 0 unless otherwise noted) Characteristics Symbot_[ Min | Typ | Max | Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage {All Devices) V(BR)DSS Vde (Vg = 9, Ip = 0.25 mA) Drain-to-Mirror Breakdown Voltage (02 and Q3) Vier)OMS Vde (eg = 0. Ip = 0.25 mA) | Zero Gate Voltage Drain Current (Any Single Device} VimAde | (Vpg = 80 V, Vas = 0) 02 (ps = 80 V, Veg = 0, Ty = 125°C) 1 Gate-Body Leakage Current — Forward (Any Single Device) lessF (esr = 20 Vdc, Vos = 0) ee Gate Body Leakage Current — Reverse (Any Single Device) = (esr = 20 Vde, Vg = 0) _ ON CHARACTERISTICS* Gate Threshold Voltage (Any Single Device) Vesith) Vde (ps = Ves: !p = 1 mAdc) {2 3 (Ty = 126°C) 1 - Static Drain-to-Source On-Resistance (02 and 03) Rosion) 0.18 | Ohms (Vgg = 10 Vdc, Ip = 4 Ade) (continued! MOTOROLA TMOS POWER MOSFET DATA 3-61
MOTOROLA SC (XSTRS/P F) BBE D MM 6367254 0098456 144 MENOTL MPM3002 ELECTRICAL CHARACTERISTICS — continued (T) = 25°C, Vs = 0 unless otherwise noted) [charncteraticn OT Symbot min tye | max [unit | ON CHARACTERISTICS* ed (Vg = 10 Vdc, Ip = 4 Ade) Petre, = (Vps = 10 Vdc, Ip = 4 Ade) el (Vps = 10 Vdc, Ip = 4 Ade) CURRENT SENSING CHARACTERISTICS (N-Channel, Q2 and 03) feet tT) (RSENSE = 0. Ip = 8A, Vgs = 10 V) cl (Vgg = 10 Vdc, Ip = 4 Adc) feeteetes eas = | (Gg = 10 Vde, Ip = 4 Adc, Rg = 10 megohm) Mirror Active Resistance tmion) — 112 = Lo | (Vgg = 10 Vde, Ip = 4 Adc) i eee es DYNAMIC CHARACTERISTICS (All Types) as ‘SWITCHING CHARACTERISTICS" (N-Channel, 02 and 03) ia CSS ee nemes Ee ee ‘SWITCHING CHARACTERISTICS* (P-Channel, 01 and Q4) Lew p= ‘SOURCE-DRAIN DIODE CHARACTERISTICS (N-Channel, 02 and 03) oe a ‘SOURCE-DRAIN DIODE CHARACTERISTICS (P-Channel, Q1 and 04) [| vso | - | 4 [ — J vac] a Pet et] "| “Indicates Pulse Test: Pulse Width = 200 us Max, Duty Cycle = 2% Note 1: Handling precautions to protect against electrostatic discharge is mandatory Note 2: Do not use the mirror FET independent of the power FET Note 3: itis recommended thet the mirror terminal (M) be shorted to the source terminal (S) when current sensing 1s not required MOTOROLA TMOS POWER MOSFET DATA 3-62
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Figure 7. On-Resistance Variation with Temperature Figure 8. On-Resistance Variation with Temperature Figure 9. Drain-To-Source Breakdown Figure 10. Drain-To-Source Breakdown
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Figure 11. Gate Threshold Voltage Variation Figure 12. Gate Threshold Voltage Variation
Figure 13. Capacitance Variation Figure 14. Capacitance Variation Figure 15. Stored Charge Variation Figure 16. Stored Charge Variation
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Figure 17. Thermal Response
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Figure 18. Maximum Rated Forward Biased Figure 19. Maximum Rated Forward Biased
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0 Ey 0 60 80 100 [ -20 -4 60 80 — 100
to designers of linear systems. The curves are based on _ switching times less than one microsecond. Its Use” provides detailed instructions.
insulating material isolates the leadframes from the alu- calculate the junction temperature of Q1 and Q4. Figure 22. Internal Construction of the MPM3002 Table 1. Thermal Coupling Coefficients
rent may be calculated from the following sensing power ground will provide faster switching speeds.
- VSENSE = !D fa(on) RSENSE/IRSENSE + Tm(on)] sensing circuitry’s input terminals is often desirable. A
- RSENSE = VSENSE 'm(on/ID ra(on) — VSENSE! 1 psec time constant is generally long enough to pro-
- Ip = VSENSE (RSENSE + Tm(on))/Ta{on) RSENSE vide adequate noise suppression and short enough to
- talon) = fm(ony/" illustration is provided in Figure 26.
compliance ratio, Kc, and defines the upper bound- rom overload stress. 3%. As RSENSE /s increased, sensing accuracy is defined only in the forward-mode operation.
9 DRAN ne ee
Figure 24. SENSEFET Model Figure 25. Sense Voltage versus Drain Current
Figure 26. SENSEFET Device with Noise Suppression Figure 27. Typical Current Sensing with a SENSEFET Device