MPF256 MOTOROLA | Alldatasheet
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MOTOROLA SC {XSTRS/R FF 96 de Mfe3e7254 oosznas o Of
6367254 MOTOROLA SC (XSTRS/R F) gep 82689 D :
CASE 29-04, STYLE 5 TO-92 (TO-226AA) : MAXIMUM RATINGS 3 | [ating YT Symbot [value [unit] 1 cue [‘DrainSouree votege | vps a0 | vae | *3 1 Source [DrainGetevorege | Vg [ao va Roverse Gate-Source Voltage | Vesa 30 [Vee _| JFET | Forward Gate Current | guy | 10 mace ‘AMPLIFIER Total Device Disipaton @ Ta = 250 sso | mw Pama [ee level * Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) eS OFF CHARACTERISTICS Gate Source Beatdown Votage Vee {ig = 10 wAde, Vos = 0) Gato Reverse Curont (Wes = 18 Vée, Vos = 0) ; Gate Source Cuoff Voliage Vs = 18 Ve lp = 200 wade) ON CHARACTERISTICS Zaro-Gate-Votage Drain Curent vps = 18Vée Vos = 0) fed Groen Violet SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance Wvfel Wos = 18 Vac, Vgg = 0, = 10 ee : Taput Capacitance ise {pg = 15 Vide Ip = 10 mAde,t = 1.0 MMH Favors Transfer Capacitance Cre 3 (pg = 15 Vde, Ip = 10 mAdc, f = 1.0 MHz) Output Capacitance Coss (Vps = 15 Vde, Ip = 10 mAde, f = 1.0 kHz) FUNCTIONAL CHARACTERISTICS Noise Figure (Vps = 15 Vde, Rg = 50 Ohms) 100 MiKz ‘oowie Common Souree Power Gain (ps = 18 Vaz, Rg = 80 Ohms) too mite
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MOTOROLA SC {LXSTRS/R FF I : 9&4 DE fb3b7254 0083282 7 " 6367254 M - | MOTOROLA SC (XSTRS/R F) 98D 83282 D i IRFD220-223 . ELECTRICAL CHARACTERISTICS — Continued (Tc = 25°C unless otherwise noted) . (ON CHARACTERISTICS Gate Threshold Voltage Vesith) (lp = 260 #A, Vos = Vos) ‘Static Drain-Source On-Resistancel") tDSton) (Vgs = 10 Vdc, Ip = 0.4 A) IRFD220, IRFD221 IRFD222, (RFO223 ‘On-Stato Drain Currend(t : (Wes = 10, Vos = VP IRFD220, RFD221 08 tR0222, FD223 07 Forward Transconductance(?? . lp = 04A, Vos = 5V) e ‘CAPACITANCE x Wos = 28V.vgs= 0 [Coss | — | = | 900 | [tw [| = [= | @ | SWITCHING CHARACTERISTICS [Riotime |= Wp ~ 95 Vanipss: fs. | - [= | @ | [tumor devine (| 1 8470-800) [—taom | — [= | 00] ‘SOURCE-DRAIN DIODE CHARACTERISTICS Diode Forward Voltage (Vag = 0) Ig = 0.8 AIRFD220, IRFD221 Vep 2 Vdc . 1S = 07 AIRFD222, InFO223 i ‘Continuous Source Current, Body Diode IRFD220, 1RFD221 os IRFD222, IRF 223 07 Pulsed Source Current, Body Diode 1RFD220, IRFO221 theb222, IRFO223 : Ig = Rated lg, Vas = 0 . ts = Raedis.vos" 1 [ue | = Tse T= i (pulse Test: Pulse Width < 300 xs, Duty Cycle = 2%. OUTLINE DIMENSIONS : ae , 1h foauietactar tae] 'fuc-reemaomanosine Sor . Ferien st ee | + ow om nos ean s ‘=| aser anes a — lt Hebi tis Herel 2 nse aTadiRin Pete Te te Te] 4 CONTROWNG DIMEN ON CH . Bets hi-bertes) {ROOTS Nr ores °. p__t iL ‘CASE 370-01 al mos MOTOROLA TMOS POWER MOSFET DATA 3-144