MPF102 FAIRCHILD | Alldatasheet
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1999 Fairchild Semiconductor Corporation MPF102 TO-92G S D N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value Units V DG Drain-Gate Voltage 25 V V GS Gate-Source Voltage -25 V I GF Forward Gate Current 10 mA T J ,T stg Operating and Storage Junction Temperature Range -55 to + 155 degree C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 degrees C unless otherwise noted. Symbol Characteristic UnitsMax P D Total Device Dissipation Derate above 25 degrees C 350 2.8 mW mW/degrees C R θJC Thermal Resistance, Junction to Case 125 degrees C/W R θJA Thermal Resistance, Junction to Ambient 357 degrees C/W * Device mounted on FR-4 PCB 1.5” X 1.6” X 0.06”
1999 Fairchild Semiconductor Corporation N-Channel RF Amplifier ( Continued) Electrical Characteristics TA= 25 degrees C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V (BR)GSS Gate-Source Breakdown Voltage IG =-1.0 µA, V DS =0 -25 V IGSS Gate Reverse Current V GS =-15V,V DS =0 -2.0 nA V GS(off) Gate-Source Cutoff Voltage V DS =15V, ID=2nA -8.0 V V GS Gate-Source Voltage V DS =15V, ID=200 µA -0.5 -7.5 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current V DS =15V,V GS =0 2.0 20 mA gfs Forward Transconductance VGS= 0V,VDS=15V,f=1kHz. 2000 7500 µS Capacitance C iss Common-Source Input Capacitance V GS =15V,V DS =0V f=1 MHz. 7.0 pf C rss Common-Source reverse Transfer Capacitance V GS =15V,V DS =0V f=1 MHz. 3.0 pf
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