MP7001 TOSHIBA | Alldatasheet

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  1. Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage V RRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) I FSM 220 A Forward current I F 25 A Junction temperature T j 150 °C Storage temperature range T stg /G2d40~125 °C IGBT Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES /Gb120 V DC I C 30 A Collector current 1 ms I CP 60 A Collector power dissipation (Tc /G3d 25°C) PC 37 W Junction temperature T j 150 °C Storage temperature range T stg /G2d40~125 °C All system Characteristics Symbol Condition Rating Unit Isolation voltage V ISO AC 1 minute 2500 V /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibi lity of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o r damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handlin g Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this docume nt shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assume d by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from i ts use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAA1
  1. Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Diode Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage (1) V FM (1) I F /G3d 12.5 A /Gbe 1.0 1.2 V Peak forward voltage (2) V FM (2) I F /G3d 30 A/G20/Gbe 1.20 1.55 V Repetitive peak reverse Current I RRM V RRM /G3d 600 V/G20 10 /G6dA Peak reverse current (D1, D2) I rr I F /G3d 30 A/G20 100 A Thermal resistance R th (j-c) /Gbe /Gbe /Gbe 3.5 °C/W IGBT Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb120 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 600 V, VGE /G3d 0 /Gbe /Gbe 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C /G3d 30 mA, VCE /G3d 5 V 3.0 /Gbe 6.0 V Collector-emitter saturation voltage V CE (sat) I C /G3d 30 A, VGE /G3d 15 V /Gbe 2.0 2.7 V Input capacitance C ies VCE /G3d 10 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 2100 /Gbe pF Rise time t r /Gbe 0.36 /Gbe Turn-on time t on /Gbe 0.59 /Gbe Fall time t f /Gbe 0.27 0.42 Switching time Turn-off Time t off Load resistance VCC /G3d 300 V, IC /G3d 30 A VGE /G3d ±15 V, (RG /G3d 56 /G57) (Note) /Gbe 0.51 /Gbe /G6ds Thermal Resistance R th (j-c) /Gbe /Gbe 3.3 °C/W 3. Mechanical Rating Characteristics Min Typ. Max Unit Fastening torque /Gbe /Gbe 1.5 Nm Note: Switching time test circuit & timing chart Load Resistance Test Circuit Waveform /G2d15 V VCC /G3d 300 V C /G3d 680 /G6dF

15 V 10 /G57

90% 10% 90% 10% 90% ton toff tf 10% tr VGE IC

  1. Package Dimension 5. Image of Chips Mounting
  1. PSC Equivalent Circuit Diagram (including application circuit) 7. Pin Assignment 5 7 8 Fuse PSC IGBT1 From CPU AE G C /G2b ~ /G2d 1. /G2b pin 2. ~ pin 3. /G2d pin 4. ~ pin 5. A pin 6. C pin (TOSHIBA test pin) 7. E pin 8. G pin

Forward voltage V F (V) IF – VF Forward current I F (A) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) IC – VGE Collector current I C (A) 100 0 0.8 0.4 2 1.6 1.2 Common cathode 125 Ta /G3d 25°C 0 1 2 3 4 5 15 9 VGE /G3d 6 V Common emitter Tc /G3d 25°C 0 20 4 8 12 16 Common emitter Tc /G3d /G2d40°C 10 A 0 20 4 8 12 16 Common emitter Tc /G3d 25°C 10 A 0 20 4 8 12 16 Common emitter Tc /G3d 125°C 10 A 0 2 4 6 10 12 8 Common emitter VCE /G3d 0.2 V

125 Tc /G3d 40°C

0.1 0.3 0.5 ton tr : Tc /G3d 25°C : Tc /G3d 125°C Common emitter VCC /G3d 300 V VGE /G3d /Gb115 V RG /G3d 56 /G57 1 10 100 3 30 5 50 0.1 0.3 0.5 toff tf : Tc /G3d 25°C : Tc /G3d 125°C Common emitter VCC /G3d 300 V VGE /G3d /Gb115 V RG /G3d 56 /G57 400 300 200 100 40 80 120 160 200 VCE /G3d 100 V 200 300 Common emitter RL /G3d 10 /G57 Tc /G3d 25°C Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate resistance R G ( /G57) tr, ton – RG Switching time t r, ton ( /G6ds) Gate resistance R G ( /G57) tr, toff – RG Switching time t r, toff ( /G6ds) Collector current I C (A) tr, ton – IC Switching time t r, ton ( /G6ds) Collector current I C (A) tf, toff – IC Switching time t r, toff ( /G6ds) 0.1 100 1000 10000 1 10 100 1000 Common emitter VGE /G3d 0 V f /G3d 1 MHz Tc /G3d 25°C Cies Coes Cres 0.1 0.3 1 10 100 10003 30 300 Common emitter VCC /G3d 300 V VGE /G3d /Gb115 V IC /G3d 30 A : Tc /G3d 25°C : Tc /G3d 125°C toff tr 0.1 0.3 1 10 100 10003 30 300 Common emitter VCC /G3d 300 V VGE /G3d /Gb115 V IC /G3d 30 A : Tc /G3d 25°C : Tc /G3d 125°C ton tr

0 700 500 300 100 400 200 600 Tj /G3c/G3d125°C VGE /G3d /Gb115 V RG /G3d 56 /G57 0.001 0.01 0.1 1 100 100 0.03 0.1 0.3 Tc /G3d 25°C IGBT Diode Diode IGBT 0.1 0.3 100 3 10 30 100 300 1000 * Single nonrepetitive pulsed Tc /G3d 25°C Curves must be derated linearly with increase in temperature. *50 /G6ds *500 /G6ds *1 ms DC operation Tc /G3d 25°C *10 ms DC Rth (t) – tw Pulse width t w (s) Thermal transient resistance R th (t) (°C/W) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) Collector-emitter voltage V CE (V) Reverse Bias SOA Collector current I C (A)