MP4009 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4009 High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching

  • Small package by full molding (SIP 10 pins)
  • High collector power dissipation (4-device operation) : P T = 4 W (Ta = 25°C)
  • High collector current: IC (DC) = −5 A (max)
  • High DC current gain: hFE = 1000 (min) (VCE = −3 V, IC = −3 A)
  • Complementary to MP4003 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −100 V Collector-emitter voltage V CEO −100 V Emitter-base voltage V EBO −5 V DC I C −5 Collector current Pulse I CP −8 A Continuous base current I B −0.1 A Collector power dissipation (1 device operation) PC 2.0 W Collector power dissipation (4 devices operation) PT 4.0 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Array Configuration Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1A Weight: 2.1 g (typ.) R1 R2 R1 ≈ 5 kΩ, R2 ≈ 120 Ω

Characteristics Symbol Max Unit Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) ΣRth (j-a) 31.3 °C/W Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = −100 V, IE = 0 A ― ― −10 µA Collector cut-off current I CEO VCE = −100 V, IB = 0 A ― ― −10 µA Emitter cut-off current I EBO VEB = −5 V, IC = 0 A −0.3 ― −2.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −30 mA, IB = 0 A −100 ― ― V hFE (1) V CE = −3 V, IC = −0.5 A 1000 ― ― DC current gain hFE (2) V CE = −3 V, IC = −3 A 1000 ― ― Collector-emitter V CE (sat) IC = −3 A, IB = −12 mA ― ― −2.0 Saturation voltage Base-emitter V BE (sat) IC = −3 A, IB = −12 mA ― ― −2.5 V Transition frequency f T VCE = −3 V, IC = −0.5 A 3 ― ― MHz Collector output capacitance C ob VCB = 50 V, IE = 0 A, f = 1MHz ― 40 ― pF Turn-on time t on ― 0.5 ― Storage time t stg ― 3.0 ― Switching time Fall time t f −IB1 = IB2 = 12 mA, duty cycle ≤ 1% ― 2.0 ― µs Marking IB1 20 µs VCC = −30 V Output 10 Ω IB1 IB2Input IB2 MP4009 JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Collector current I C (A) hFE – IC DC current gain h FE Base current I B ( m A ) VCE – IB Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Base-emitter voltage V BE (V) IC – VBE Collector current I C ( A ) Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) ( V ) IB = −0.3 mA Common emitter Ta = 25 °C −100 −15 −30 Common emitter VCE = −3 V 25 −55Ta = 100°C Common emitter VCE = −3 V −0.05 −55 Ta = 100°C 100 300 500 1000 3000 5000 10000 −0.1 −0.3 100 Ta = −55°C Common emitter IC/IB = 250 −0.3 −1 −3 −10 −0.5 −10 −0.1 −0.3 25 100 Ta = −55°C Common emitter IC/IB = 250 −0.3 −1 −3 −10 −0.5 −10 Common emitter Ta = 25°C −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 IC = −0.1 A

Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C ( A ) rth – tw Pulse width t w (s) Transient thermal resistance r th (°C/W) Ambient temperature Ta (°C) PT – Ta Total power dissipation P T (W) Total power dissipation P T (W) ∆Tj – PT Junction temperature increase ∆Tj ( ° C ) 80 120 160 200 0 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board Circuit board (4) (3) (2) (1) 1 2 3 4 160 120 5 0 Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board (1) (2) (3) (4) −0.03 −0.05 −0.1 −0.3 −0.5 −10 −30 *: Single nonrepetitive pulse Ta = 25 °C Curves must be derated linearly with increase in temperature. IC max (pulsed)* 10 ms* 1 ms* 100 µs* VCEO max 0.001 0.01 0.1 1 10 100 1000 0.3 100 300 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. -No heat sink/Attached on a circuit board- (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board (4) (3) (2) (1)

  • The information contained herein is subject to change without notice.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
  • TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619EAARESTRICTIONS ON PRODUCT USE