MP4006

MP4006 TOSHIBA | Alldatasheet

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TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. /Gb7/G20Small package by full molding (SIP 10 pin) /Gb7/G20High collector power dissipation (4 devices operation) : I C (DC) = ±2 A (max) /Gb7/G20High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Rating Characteristics Symbol NPN PNP Unit Collector-base voltage V CBO 80 −80 V Collector-emitter voltage V CEO 80 −80 V Emitter-base voltage V EBO 8 −8 V DC I C 2 −2 Collector current Pulse I CP 3 −3 A Continuous base current I B 0.5 −0.5 A Collector power dissipation (1 device operation) PC 2.0 W Collector power dissipation (4 devices operation) PT 4.0 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Array Configuration Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1B Weight: 2.1 g (typ.) R1 R2

1 R1 ≈ 4 kΩ R2 ≈ 800 Ω

Characteristics Symbol Max Unit Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) ΣRth (j-a) 31.3 °C/W Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = 80 V, IE = 0 A ― ― 10 µA Collector cut-off current I CEO VCE = 80 V, IB = 0 A ― ― 10 µA Emitter cut-off current I EBO VEB = 8 V, IC = 0 A 0.8 ― 4.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V DC current gain h FE V CE = 2 V, IC = 1 A 2000 ― ― ― Collector-emitter V CE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 Saturation voltage Base-emitter V BE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 V Transition frequency f T VCE = 2 V, IC = 0.5 A ― 100 ― MHz Collector output capacitance C ob VCB = 10 V, IE = 0 A, f = 1 MHz ― 20 ― pF Turn-on time t on ― 0.4 ― Storage time t stg ― 4.0 ― Switching time Fall time t f IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 0.6 ― µs IB1 20 µs VCC = 30 V Output 30 Ω IB2 IB1Input IB2

Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO VCB = −80 V, IE = 0 A ― ― −10 µA Collector cut-off current I CEO VCE = −80 V, IB = 0 A ― ― −10 µA Emitter cut-off current I EBO VEB = −8 V, IC = 0 A −0.8 ― −4.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V DC current gain h FE V CE = −2 V, IC = −1 A 2000 ― ― ― Collector-emitter V CE (sat) IC = −1 A, IB = −1 mA ― ― −1.5 Saturation voltage Base-emitter V BE (sat) IC = −1 A, IB = −1 mA ― ― −2.0 V Transition frequency f T VCE = −2 V, IC = −0.5 A ― 50 ― MHz Collector output capacitance C ob VCB = −10 V, IE = 0 A, f = 1 MHz ― 30 ― pF Turn-on time t on ― 0.4 ― Storage time t stg ― 2.0 ― Switching time Fall time t f −IB1 = IB2 = 1 mA, duty cycle ≤ 1% ― 0.4 ― µs IB1 VCC = −30 V Output 30 Ω IB1 IB2Input 20 µs IB2

(NPN transistor) VCE – IB Base-emitter voltage V BE (V) Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) IC – VBE Collector current I C (A) Collector current I C (A) hFE – IC DC current gain h FE Base current I B ( m A ) Collector-emitter voltage V CE (V) Common emitter Ta = 25°C 0.1 1 10 100 500 0.4 0.8 1.2 1.6 1.5 IC = 3 A 2.5 2.0 0.5 0.1 2.4 2.0 0.8 1.6 2.4 3.2 Common emitter VCE = 2 V 25 −55Ta = 100°C 0.1 0.3 0.3 0.5 1 3 0.5 Common emitter IC/IB = 500 100 Ta = −55°C 100 0.03 25 −55 Ta = 100°C 0.1 0.3 1 3 10 300 500 1000 3000 5000 10000 Common emitter VCE = 2 V 0.05 0.5 5 0.3 0.3 0.5 1 3 0.5 Common emitter IC/IB = 500 100 Ta = −55°C 0.3 IB = 0.19 mA 0.21 0.23 0.5 2 Common emitter Ta = 25°C 0.8 1.6 2.4 3.2 2 4 6 8 10 0.2

(PNP transistor) VCE – IB Base-emitter voltage V BE (V) Collector current I C (A) VCE (sat) – IC Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) IC – VBE Collector current I C (A) Collector current I C (A) hFE – IC DC current gain h FE Base current I B ( m A ) Collector-emitter voltage V CE (V) −0.8 −1.6 −2.4 −3.2 Common emitter VCE = −2 V 25 −55 Ta = 100°C −0.1 −0.3 −0.3 −0.5 −1 −3 −0.5 Common emitter IC/IB = 500 100 Ta = −55°C −0.1 −0.3 −0.3 −0.5 −1 −3 −0.5 Common emitter IC/IB = 500 100 Ta = −55°C 100 −0.03 −55 Ta = 100°C 300 500 1000 3000 5000 10000 Common emitter VCE = −2 V −0.5 −5 Common emitter Ta = 25°C −0.4 −0.8 −1.2 −1.6 −1.5 IC = −3 A −2.5 −2.0 −1.0 −0.5 −0.1 −2.4 −2.0 Collector-emitter saturation voltage VCE (sat) (V) −0.3 IB = −0.17 mA −0.2 −0.25 −0.4 −1 Common emitter Ta = 25°C −0.8 −1.6 −2.4 −3.2

Collector-emitter voltage V CE (V) Safe Operating Area (NPN Tr) Transient thermal resistance r th (°C/W) rth – tw Pulse width t w (s) Transient thermal resistance rth ( ° C / W ) Ambient temperature Ta (°C) PT – Ta Total power dissipation P T (W) Total power dissipation P T (W) ∆Tj – PT Junction temperature increase ∆Tj ( ° C ) Collector-emitter voltage V CE (V) Safe Operating Area (NPN Tr) Transient thermal resistance r th (°C/W) 80 120 160 200 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board Circuit board (4) (3) (2) (1) 1 2 3 4 160 120 5 0 Attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Circuit board (1) (2) (3) (4) 0.03 3 5 10 30 50 100 300 0.05 0.1 0.3 0.5 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* 10 ms* 1 ms* 100 µs* VCEO max −0.03 −0.05 −0.1 −0.3 −0.5 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* 10 ms* 1 ms* 100 µs* VCEO max 0.001 0.01 0.1 1 10 100 0.5 100 Curves should be applied in thermal limited area (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. -No heat sink and attached on a circuit board- (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Circuit board (3) (2) (1) NPN PNP (4) 1000

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE