MP4005

MP4005 TOSHIBA | Alldatasheet

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TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4005 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching

• Small package by full molding (SIP 10 pins)
• High collector power dissipation (4-device operation) : P T = 4 W (Ta = 25°C)
• High collector current: IC (DC) = ±4 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Absolute Maximum Ratings (Ta = 25°C) Rating Characteristics Symbol NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 5 −5 V DC I C 4 −4 Collector current Pulse I CP 6 −6 A Continuous base current IB 0.4 −0.4 A Collector power dissipation (1-device operation) PC 2.0 W Collector power dissipation (4-device operation) P T 4.0 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-25A1B Weight: 2.1 g (typ.)

Characteristics Symbol Max Unit Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) ΣRth (j-a) 31.3 °C/W Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 20 μA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 20 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.5 ― 2.5 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE (1) V CE = 2 V, IC = 1 A 2000 ― ― DC current gain hFE (2) V CE = 2 V, IC = 3 A 1000 ― ― Collector-emitter V CE (sat) IC = 3 A, IB = 6 mA ― ― 1.5 Saturation voltage Base-emitter V BE (sat) IC = 3 A, IB = 6 mA ― ― 2.0 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 60 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 30 ― pF Turn-on time ton ― 0.2 ― Storage time tstg ― 1.5 ― Switching time Fall time t f IB1 = −IB2 = 6 mA, duty cycle ≤ 1% ― 0.6 ― μs IB1 20 μs VCC = 30 V Output 10 Ω IB2 IB1Input IB2 R1 R2 1 R1 ≈ 4.5 kΩ R 2 ≈ 300 Ω R1 R2

Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −20 μA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −20 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A −0.5 ― −2.5 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE (1) V CE = −2 V, IC = −1 A 2000 ― ― DC current gain hFE (2) V CE = −2 V, IC = −3 A 1000 ― ― Collector-emitter V CE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 Saturation voltage Base-emitter V BE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 V Transition frequency fT VCE = −2 V, IC = −0.5 A ― 40 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0 A, f = 1 MHz ― 55 ― pF Turn-on time ton ― 0.15 ― Storage time tstg ― 0.80 ― Switching time Fall time t f −IB1 = IB2 = 6 mA, duty cycle ≤ 1% ― 0.40 ― μs Marking IB1 VCC = −30 V Output 10 Ω IB1 IB2Input 20 μs IB2 MP4005 JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

(NPN transistor) Collector current I C (A) hFE – IC DC current gain h FE Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Base-emitter voltage V BE (V) IC – VBE Collector current I C (A) Base current I B ( m A ) VCE – IB Collector-emitter voltage V CE (V) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 300 0.05 0.1 0.3 0.5 1 3 5 10 500 1000 3000 5000 10000 20000 Common emitter VCE = 2 V Ta = 100°C −55 0.1 0.3 1 10 30 100 3 300 2.4 0.4 1.6 2.0 0.8 1.2 0.3 3 4

5 IC = 6 A

Ta = 25°C 0.3 0.5 1 3 5 10 0.1 0.3 0.5 Common emitter IC/IB = 500 Ta = −55°C 100 0.3 0.5 1 3 5 10 0.1 0.3 0.5 Common emitter IC/IB = 500 Ta = −55°C 100 Common emitter VCE = 2 V

25 Ta = 100°C −55

0.5 IB = 0.2 mA 0.23 0.3 1 2 3 4 5 6 7 Common emitter Ta = 25°C

(PNP transistor) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Base-emitter voltage V BE (V) IC – VBE Collector current I C (A) Collector current I C (A) hFE – IC DC current gain h FE Base current I B ( m A ) VCE – IB Collector-emitter voltage V CE (V) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 300 −0.05 500 1000 3000 5000 10000 20000 Common emitter VCE = −2 V Ta = 100°C −55 −0.1 −2.4 −0.4 −1.6 −2.0 −0.8 −1.2 Common emitter Ta = 25°C −0.3 −5 IC = −6 A −10 −10 −0.3 −0.5 Common emitter IC/IB = 500 Ta = −55°C 100 −0.3 −0.5 Common emitter IC/IB = 500 25 Ta = −55°C 100 Common emitter VCE = −2 V Ta = 100°C −55 −0.5 IB = −0.2 mA −0.3 −0.4 −1.0 −0.7 −1.5 Common emitter Ta = 25°C

Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) rth – tw Pulse width t w (s) Transient thermal resistance r th (°C/W) −0.01 −0.5 −0.03 −0.05 −0.1 −0.3 −0.5 −10 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* 10 ms 1 ms 100 μs VCEO max 0.001 0.01 0.1 1 10 100 1000 0.3 -No heat sink/Attached on a circuit board- (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (3) (2) (1) NPN PNP 100 300 (4) 0.01 0.5 0.03 0.05 0.1 0.3 0.5 1 3 10 30 100 300 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* 10 ms 1 ms 100 μs VCEO max

Total power dissipation P T (W) ΔTj – PT Junction temperature increase ΔTj (°C) Ambient temperature Ta (°C) PT – Ta Total power dissipation P T (W) Collector current I C (A) Switching (NPN) Switching time ( μs) Collector current I C (A) Switching (PNP) Switching time ( μs) (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board 0 40 80 120 160 200 (3) (2) (1) (4) Circuit board 1 2 3 4 5 120 (3) (2) (1) (4) Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board IB1 = −IB2 = −6mA Duty cycle ≤ 1% 0.1 0.1 0.3 1 3 10 30 100 0.3 IB1 20 μs IB2 VCC = 30 V OutputRL IB2 IB1 Input tstg tf ton −IB1 = IB2 = 6mA Duty cycle ≤ 1% 0.1 0.3 VCC = −30 V Output RL IB1 IB2 Input IB1 20 μs IB2 tstg tf ton

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.