MP35005 DSK | Alldatasheet
Document overview
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Technical content
17.7± 0.5 16.1± 0.5 15.7± 0.5 14.3± 0.5 28.6± 0.4 28.6± 0.4 6.4 0.8 8.0± 0.1 15± 0.5 φ 5.2 TYP. METAL HEAT SINK PLASTIC
FEATURES
Surge overload rating to 400 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. MP 3502 MP 3504 MP 3506 MP 3508 MP
3510 UNITS
Max imum r ec ur rent peak r ev ers e v oltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Max imum DC bloc king v oltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T A =25 P eak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 17.5A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Operating junction temperature range T J Storage temperature range T STG MP 35005 MP 3501 50 100 1.1 1.0 400.0 I FSM MP35005 - - - MP3510 A 10.0 plastic technique results in inexpensive product I F(AV) 35.0 SILICON BRIDGE RECTIFIERS Lead solderable per MIL-STD-202 method 208 A - 55 ---- + 150 - 55 ---- + 125 I R 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 35.0 A MP Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
0.1 1.0 1.6.2 100 1.4 1000 05 0 1 0 0 150 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES PERCENT OF RATED PEAK REVERSE VOLTAGE MP35005 - - - MP3510 NUMBER OF CYCLES AT 60H Z AMBIENT T EMPERAT URE, INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, INST ANT ANEOUS FORWARD VOLT AGE, VOLT S INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FIG.2 -- FORWARD DERATING CURVE FIG.1 -- PEAK FORWARD SURGE CURRENT FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTICS AMPERES .01 1.0 0.1 T J =100 T J =25 0 20 40 60 80 100 120 140 100 1 100 500 200 300 400 8.3ms Single Half Sine Wave T J =150 www.diode.kr Diode Semiconductor Korea