MP23AB01DH STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Pin description
  • 2 Acoustic and electrical specifications
  • 2.1 Acoustic and electrical characteristics
  • 2.2 Frequency response
  • 3 Absolute maximum ratings
  • 4 Application recommendations
  • 4.1 MP23AB01DH schematic hints
  • 5 Package information
  • 5.1 Soldering information
  • 5.2 RHLGA 4-lead package information
  • 6 Reliability tests
  • 7 Revision history

Features

  • Single supply voltage operation
  • Fully differential output
  • Omnidirectional sensitivity
  • High signal-to-noise ratio
  • High bandwidth
  • Package compliant with reflow soldering
  • High RF immunity
  • ECOPACK®, RoHS, and “Green” compliant

Description

The MP23AB01DH is a compact, low-power microphone built with a capacitive sensing element and an IC interface. The sensing element, capable of detecting acoustic waves, is manufactured using a specialized silicon micromachining process to produce audio sensors. The MP23AB01DH has sensitivity of 38 dB ±1 dB, an acoustic overload point of 135 dBSPL with minimum 65 dB signal-to-noise ratio. The MP23AB01DH has fully differential output in order to minimize common mode noise. The MP23AB01DH is available in a package compliant with reflow soldering and is guaranteed to operate over an extended temperature range from -40 °C to +85 °C. Table 1: Device summary Order code Temp. range (°C) Package Packing MP23AB01DH -40 to +85 (3.35 x 2.5 x 0.98) mm Tray MP23AB01DHTR -40 to +85 (3.35 x 2.5 x 0.98) mm Tape and reel

MP23AB01DH Pin description

1 Pin description

Figure 1: Pin connections Table 2: Pin description Pin number Pin name Function

1 Vdd Power supply

2 Output– Negative output signal

3 Output+ Positive output signal

4 Ground Ground

Acoustic and electrical specifications MP23AB01DH

2 Acoustic and electrical specifications

2.1 Acoustic and electrical characteristics

The values listed in the table below are specified for Vdd = 2.7 V, No Load, Tamb = 25 °C unless otherwise specified. Table 3: Acoustic and electrical characteristics Symbol Parameter Test condition Min. Typ. (1) Max. Unit Vdd Supply voltage 2.3 2.7 3.6 V Idd Current consumption 250 µA So Sensitivity @1 kHz (0 dB = 1 V/Pa) -39 -38 -37 dBV SNR Signal-to-noise ratio A-weighted (20 Hz - 20 kHz) 65 dB(A) PSR Power supply rejection 100 mVpp sine wave @217 Hz -100 dB AOP Acoustic overload point 135 dBSPL Zout Output impedance 400 Ω Cload Load capacitance 150 pF Rload Load resistance κΩ Top Operating temperature range -40 +85 °C Notes: (1)Typical specifications are not guaranteed. Table 4: Typical distortion specifications at 1 kHz sine wave input Parameter Test condition Typ. value THD+N 94 dBSPL < 0.2% 110 dBSPL < 0.5% 120 dBSPL < 3% 130 dBSPL < 5%

MP23AB01DH Acoustic and electrical specifications

2.2 Frequency response

Figure 2: Typical free-field frequency response normalized at 1 kHz

3 Absolute maximum ratings

Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 5: Absolute maximum ratings Symbol Ratings Maximum value Unit Vdd Supply voltage -0.5 to 4.8 V TSTG Storage temperature range -40 to +105 °C ESD (HBM) ANSI/ESDA/JEDEC JS001 ±2000 V ESD (MM) EIA/JESD22-A115 ±200 V ESD (CDM) JESD22-C101 ±750 V ESD (1) Per IEC61000-4-2, 3 discharges, 150 pF, 330 Ω direct contact to housing. MIC must be at zero potential before each discharge. ±8000 V Notes: (1)Bypass capacitor 200 nF or 1 µF (better), is definitely recommended for ESD main clamp integrity.

4 Application recommendations

4.1 MP23AB01DH schematic hints

Figure 3: MP23AB01DH electrical connections and external component values Pin 3 (Ground) Vdd Pin.5 Output - Output + GND Vdd Typical Values C1 = 100 nF C2 = 1 µF C1 C2 MP23AB01DH Pin 2 Pin 4

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

5.1 Soldering information

Figure 4: Recommended soldering profile limits Table 6: Recommended soldering profile limits Description Parameter Pb free Average ramp rate TL to TP 3 °C/sec max Preheat Minimum temperature Maximum temperature Time (TSMIN to TSMAX) TSMIN TSMAX tS 150 °C 200 °C 60 sec to 120 sec Ramp-up rate TSMAX to TL Time maintained above liquidus temperature Liquidus temperature tL TL 60 sec to 150 sec 217 °C Peak temperature TP 260 °C max Time within 5 °C of actual peak temperature 20 sec to 40 sec Ramp-down rate 6 °C/sec max Time 25 °C (t = 25 °C) to peak temperature 8 minutes max RAMP-DOWN RAMP-UP ts PREHEAT tL tp TL to TP TSMAX TSMIN TP TL 30 60 90 120 150 180 210 240 270 300 330 360 390 T25° to PEAK TEMPERATURE CRITICAL ZONE TIME

5.2 RHLGA 4-lead package information

Figure 5: RHLGA metal cap 4-lead (3.35 x 2.5 x 0.98 mm) package outline and mechanical dimensions Dimensions are in millimeter unless otherwise specified General Tolerance is +/-0.15mm unless otherwise specified OUTER DIMENSIONS ITEM DIMENSION [mm] TOLERANCE [mm] 1.0±53.3]L[htgneL 1.0±5.2]W[htdiW 1.0±89.0]H[thgieH 50.0±53.0Ø]PA[tropdnuoS 8573114_2

Reliability tests MP23AB01DH

6 Reliability tests

The device passed all reliability tests on three different assembly lots under the following conditions in the table below. Table 7: Tests and summary of results Test name Description Conditions HTOL: High Temperature Operating Life The device is stressed in dynamic configuration, approaching the operative max. absolute ratings in terms of junction temperature, load current, internal power dissipation. Vdd(max) = 3.6 V; Tamb = 125 °C JESD22a108 HTS: High Temperature Storage The device is stored in an unbiased condition at the maximum temperature allowed by the package materials, sometimes higher than the maximum operative temperature. Ta = 125 °C JESD22a103 PC (JL3): Preconditioning (solder simulation) The device is submitted to a typical temperature profile used for surface mounting, after controlled moisture absorption TC: Temperature Cycling The device is submitted to cycled temperature excursions, between a hot and a cold chamber in air atmosphere Ta Cycling: -40 °C ±125°C JESD22a104 ESD (HBM): Electrostatic Discharge (Human Body Model) The device is submitted to a high voltage peak on all his pins simulating ESD stress according to different simulation models. Voltage ±2000 V JEDEC / JESD22-A114E ESD (MM): Electrostatic Discharge (Machine Model) Voltage +/-200V JEDEC/JESD-A115-A ESD (CDM): Electrostatic Discharge (Charged Device Model) Voltage ±750 V ANSI / ESD STM 5.3.1 ESDA LU (CI): Latch-up (Overvoltage and Current Injection) The device is submitted to a direct current forced/sunk into the input/output pins. Removing the direct current, no change in the supply current must be observed. Current injection ±200 mA Overvoltage 1.5 x Vmax EIA/JESD78 THB: Temperature Humidity Bias The device is biased in static configuration minimizing its internal power dissipation, and stored at controlled conditions for ambient temperature and relative humidity. Vdd(nom) = 2.7 V T = 85 ° C / RH = 85% JESD22a108 LTS: Low Temperature Storage The device is stored in an unbiased condition at the min. temperature allowed by the package materials, sometimes lower than the min. op. temp Ta = -40°C JESD22a119 MS: Mechanical Shock The device is submitted to 10000 g / 0.1 ms 5 shocks for each axis. 10000 g / 0.1 ms 5 shocks for each axis, under bias MIL STD 883MIL

7 Revision history

Table 8: Document revision history Date Revision Changes 17-Nov-2016 1 Initial release