MMVL2101T1_06 ONSEMI | Alldatasheet

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Technical content

Features

  • High Q
  • Controlled and Uniform Tuning Ratio
  • Standard Capacitance Tolerance − 10%
  • Complete Typical Design Curves
  • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 30 Vdc Peak Forward Current IF 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance, Junction−to−Ambient R/C0113JA 635 °C/W Junction and Storage Temperature TJ, Tstg 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad

30 VOLTS VOLTAGE VARIABLE

Preferred devices are recommended choices for future use and best overall value. http://onsemi.com Device Package Shipping †

ORDERING INFORMATION

MMVL2101T1 SOD−323 3000 / Tape & Reel MMVL2101T1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PLASTIC SOD−323 CASE 477 STYLE 1 4G = Device Code M = Date Code* /C0071= Pb−Free Package *Date Code orientation may vary depending upon manufacturing location. MARKING DIAGRAM (Note: Microdot may be in either location) 4G M /C0071 /C0071

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 /C0109Adc) V(BR)R 30 − − Vdc Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) IR − − 0.1 /C0109Adc Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) TCC − 280 − ppm/°C CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Device Min Nom Max Typ Min Typ Max PARAMETER TEST METHODS 1. C T, DIODE CAPACITANCE (CT = C C + C J). C T is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q /C00432/C0112fC G (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length /C0091 1/16”. 4. TC C, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing C T at V R = 4.0 Vdc, f = 1.0 MHz, T A = −65 °C with C T at V R = 4.0 Vdc, f = 1.0 MHz, T A = +85 °C in the following equation, which defines TCC: TCC /C0043/C0356CT(/C004185°C) – CT(–65°C) 85 /C004165 /C0356· 106 CT(25°C) Accuracy limited by measurement of CT to ±0.1 pF.

http://onsemi.com PACKAGE DIMENSIONS HE SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. NOTE 3 D 1 2b E A C STYLE 1: PIN 1. CATHODE 2. ANODE NOTE 5 L 1.60 0.063 0.63 0.025 0.83 0.033 2.85 0.112 HE DIM MIN NOM MAX MILLIMETERS A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 0.08 2.30 2.50 2.70 L 0.031 0.035 0.040 0.000 0.002 0.004

0.006 REF

0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN NOM MAX INCHES *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 MMVL2101T1/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.