MMT10B230T3 ONSEMI | Alldatasheet

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 Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 7

1 Publication Order Number:

MMT10B230T3, MMT10B260T3, MMT10B310T3 Preferred Device Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises.

  • Outstanding High Surge Current Capability: 100 Amps 10x1000 µsec Guaranteed at the extended temp range of −20°C to 65°C
  • The MMT10B230T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68.
  • Bidirectional Protection in a Single Device
  • Little Change of V oltage Limit with Transient Amplitude or Rate
  • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices
  • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation.
  • Surface Mount Technology (SMT)
  • Complies with GR1089 Second Level Surge Spec at 500 Amps 2x10 µsec Waveforms
  • Indicates UL Registered − File #E210057
  • Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG; MMT10B310T3: RPDJ, and Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Off−State Voltage − Maximum MMT10B230T3 MMT10B260T3 MMT10B310T3 VDM 170 200 270 Volts Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1. and 2.) (−20°C to +65°C) 2 x 10 µsec 10 x 700 µsec 10 x 1000 µsec IPPS1 IPPS2 IPPS3 500 180 100 A(pk) Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, Ipk = 110A di/dt 100 A/µs 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. BIDIRECTIONAL TSPD

100 AMP SURGE

Preferred devices are recommended choices for future use and best overall value. Device Package Shipping †

ORDERING INFORMATION

MMT10B230T3 SMB 12mm Tape and Reel (2.5K/Reel) MMT10B260T3 SMB 12mm Tape and Reel (2.5K/Reel) MMT10B310T3 SMB 12mm Tape and Reel (2.5K/Reel) MT1 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C RPDx = Specific Device Code x = F, G or J Y = Year WW = Work Week MARKING DIAGRAMS YWW RPDx http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

MMT10B230T3, MMT10B260T3, MMT10B310T3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State TJ1 −40 to +125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 +175 °C Instantaneous Peak Power Dissipation (Ipk = 100 A, 10x1000 µsec @ 25°C) PPK 4000 W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristic Symbol Min Typ Max Unit Breakover Voltage (Both polarities) (dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) MMT10B230T3 MMT10B260T3 MMT10B310T3 (+65°C) MMT10B230T3 MMT10B260T3 MMT10B310T3 V(BO) 265 320 365 290 340 400 Volts Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), MMT10B230T3 R I = 1.0 kΩ , t = 0.5 cycle) (Note 3.) MMT10B260T3 MMT10B310T3 (+65°C) MMT10B230T3 MMT10B260T3 MMT10B310T3 V(BO) 265 320 365 290 340 400 Volts Breakover Voltage Temperature Coefficient dV(BO)/dTJ − 0.08 − %/°C Breakdown Voltage (I(BR) = 1.0 mA) Both polarities MMT10B230T3 MMT10B260T3 MMT10B310T3 V(BR) 190 240 280 Volts Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM ) Both polarities ID1 ID2 2.0 5.0 µA On−State Voltage (IT = 1.0 A) (PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3.) VT − 1.53 5.0 Volts Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ ) Both polarities IBO − 260 − mA Holding Current (Both polarities) (Note 3.) VS = 500 Volts; IT (Initiating Current) = 1.0 A IH 150 270 − mA Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR , TJ = 25°C) dv/dt 2000 − − V/µs Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) C O − 160 200 pF 3. Measured under pulse conditions to reduce heating.

MMT10B230T3, MMT10B260T3, MMT10B310T3 http://onsemi.com + Current + Voltage VTM V(BO) I(BO)ID2ID1 VD1 VD2 V(BR) IH Symbol Parameter ID1 , ID2 Off State Leakage Current VD1 , VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage Voltage Current Characteristic of TSPD (Bidirectional Device)

MMT10B230T3, MMT10B260T3, MMT10B310T3 http://onsemi.com TELECOM EQUIPMENTOUTSIDE PLANT TIP RING GND TELECOM EQUIPMENTOUTSIDE PLANT TIP RING GND TELECOM EQUIPMENTOUTSIDE PLANT TIP RING GND PPTC* PPTC* HEAT COIL HEAT COIL *Polymeric PTC (positive temperature coefficient) overcurrent protection device

MMT10B230T3, MMT10B260T3, MMT10B310T3 http://onsemi.com PACKAGE DIMENSIONS SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C−01 ISSUE A 0.085 2.159 0.108 2.743 0.089 2.261 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* A S D B JPK C H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.160 0.180 4.06 4.57 B 0.130 0.150 3.30 3.81 C 0.075 0.095 1.90 2.41 D 0.077 0.083 1.96 2.11 H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30 K 0.030 0.050 0.76 1.27 P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone : 81−3−5773−3850 MMT10B230T3/D LITERATURE FULFILLMENT : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.