DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
WEJ ELECTRONIC CO.,LTD 2. 30¡ À0. 05 1. 25¡ À0. 05 À . 3 0 2 . À R E F MMST2907A TRANSISTOR (PNP)
FEATURES
P CM: 0 . 2 W ( T a mb = 2 5 ℃ ) Collector current I CM: - 0 . 6 A Collector-base voltage V (BR) CBO: - 6 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= -10µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic= -10mA, I B=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE= -10µA, IC=0 -5 V Collector cut-off current ICBO V CB= -50V, IE=0 -0.01 µA Collector cut-off current ICEO V CE= -35V, IB=0 -0.05 µA Emitter cut-off current IEBO V EB= -3V, IC=0 -0.01 µA hFE(1) V CE=-10V, IC= -150mA 100 300 DC current gain hFE(2) V CE= -10V, IC=-1mA 100 Collector-emitter saturation voltage VCE(sat) I C=-500 mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) I C= -500 mA, IB= -50mA -1.2 V Transition frequency fT VCE= -20V, IC= -50mA f=100MHz
200 MHz
VCB=-10V, IE= 0 f=1MHz 8 pF Delay time td 10 nS Rise time tr VCC=-30V, IC=-150mA VBE(off)=-0.5V, IB1=-15mA 25 nS Storage time tS 80 nS Fall time tf VCC=-30V, IC=-150mA IB1= IB2= -15mA 30 nS Marking: K3F U n i t : m m SOT-323 1. BASE 2. EMITTER 3. COLLECTOR MMST2907A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS