MMST2907A-HF COMCHIP | Alldatasheet

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  • Power dissipation of 200mW. - High stability and high reliability. Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Value Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - continuous Collector power dissipation VCBO VCEO VEBO IC PC -60 -60 -600 200 V V V mA mW Symbol TJ °C150Junction temperature TSTG °C-55 to +150Storage temperature range

General Purpose Transistor Typical Rating and Characteristic Curves (MMST2907A-HF) Electrical Characteristics (at Ta=25°C unless otherwise noted) SymbolParameter Conditions Min Max Unit Collector-base breakdown voltage IC = -10μA, IE = 0 Collector-emitter breakdown voltage (Note 1) Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain (Note 1) IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IB = 0 VEB = -3V, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -0.1mA V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE(1) hFE(2) V V V nA nA nA VCE = -10V, IC = -1mA hFE(3) VCE = -10V, IC = -10mA hFE(4) VCE = -10V, IC = -500mA hFE(5) Transition frequency Delay time Storage time Rise time Fall time VCE = -20V, IC = -50mA, f = 100MHZ VCC = -30V, VBE(off) = -1.5V IC = -150mA, IB1 = -15mA VCC = -6V, IC = -150mA IB1 = IB2 = -15mA fT td tr ts tf MHZ ns ns Output capacitance CobVCB = -10V, IE = 0, f = 0.1MHZ pF Base-emitter saturation voltage (Note 1) Collector-emitter saturation voltage (Note 1) IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE(sat) VBE(sat) V VIC = -150mA, IB = -15mA IC = -150mA, IB = -15mA Comchip Technology CO., LTD. Page 2 REV:A Typ Note: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. -60 -60 -100 -100 -100 100 300 100 100 -0.4 -1.6 -1.3 -2.6 200 QW-JTR171 pF Input capacitance CibVEB = -2V, IC = 0, f = 0.1MHZ Fig.1 - Static Characteristic Collector Current, IC (A) Collector-Emitter Voltage, VCE (V) -0.05 -0.10 -0.15 -0.20 -0.25 Fig.2 - hFE ― IC DC Current Gain, hFE Collector Current, IC (mA) 100 200 300 400 500 TA=25°C TA=100°C Common emitter VCE= -10V Common emitter TA=25°C IB= -80µA -160µA -240µA -320µA -400µA -480µA -560µA -640µA -720µA -800µA

Typical Rating and Characteristic Curves (MMST2907A-HF) General Purpose Transistor Comchip Technology CO., LTD. Page 3 REV:A Fig.3 - VCEsat ― IC Collector-Emitter Saturation Voltage, VCEsat (V) -1 -10 -100 -600 -0.3 -0.6 -0.9 Fig.4 - VBEsat ― IC Base-Emitter Saturation Voltage, VBEsat (V) Collector Current, IC (mA) -1 -10 -100 -600 -0.4 -0.8 -1.2 Fig.5 - IC ― VBE Collector Current, IC (mA) Base-Emitter Voltage, VBE (V) -0.1 -10 -100 -600 Fig.6 - Cob/Cib ― VCB/VEB Capacitance, C (pF) Reverse Voltage, V (V) -0.1 -1 -10 -20 100 Collector Current, IC (mA) Fig.7 - PC ― Ta Collector Power Dissipation, PC (mW) Ambient Temperature, TA (°C) 0 25 50 75 150 100 200 300 100 125 QW-JTR171 β=10 TA=25°C TA=100°C β=10 TA=100°C TA=25°C f=1MHz IE=0/IC=0 Ta=25°C Cob Cib Common emitter VCE= -10V TA=100°C TA=25°C

General Purpose Transistor Comchip Technology CO., LTD. Page 4 REV:A Reel Taping Specification DD1D2 E A SYMBOL SOT-323 SOT-323 SYMBOL (mm) (mm) (inch) (inch) B C d D D1 D2 F P P0 P1 W W1 − 0.10 − 0.004 0.484 ± 0.039 Components Leader Tape 100±2 Empty Pockets Trailer Tape 50±2 Empty Pockets B CP A P0 P1 d WF E 120° QW-JTR171

General Purpose Transistor Standard Packaging Case Type SOT-323 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK Marking Code Part Number MMST2907A-HF Marking Code K3F B A D C Suggested P.C.B. PAD Layout SIZE (inch) 0.031 (mm) 0.80 0.50 1.30 0.020 0.051 SOT-323 2.20 0.087 A B C D K3F Comchip Technology CO., LTD. Page 5 REV:A QW-JTR171