MMST2907A_14 BILIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

PNP Silicon Epitaxial Planar Transistor MMST2907A F050 www.gmicroelec.com R e v . A 1

FEATURES

z Power dissipation.(P C=200mW) z Epitaxial planar die construction. z Complementary NPN type MMST2222A.

APPLICATIONS

z General purpose application. SOT-323

ORDERING INFORMATION

T y p e N o . M a r k i n g P a c k a g e C o d e MMST2907A K3F SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Dissipation 200 mW RθJA Thermal Resistance,Junction to Ambient 625 ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ Pb Lead-free

PNP Silicon Epitaxial Planar Transistor MMST2907A F050 www.gmicroelec.com R e v . A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C=-10mA,IB=0 -60 V Emitter-base breakdown voltage V (BR)EBO I E=-10μA,IC=0 -5 V Collector cut-off current I CBO VCB=-50V,IE=0 -10 nA Collector cut-off current I CEX VCE=-30V,VEB(OFF)=-0.5V -50 nA Base cut-off current I BL VCE=-30V,VEB(OFF)=-0.5V -50 nA DC current gain h FE VCE=-10V,IC=-0.1mA VCE=-10V,IC=-1.0mA VCE=-10V,IC=-10mA VCE=-10V,IC=-150mA VCE=-10V,IC=-500mA 100 100 100 300 Collector-emitter saturation voltage V CE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA -0.4 -1.6 V Base-emitter saturation voltage V BE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA -1.3 -2.6 V Transition frequency f T VCE=-20V, IC= -50mA f=100MHz 200 MHz Collector output capacitance C obo VCB=-10V,IE=0,f=1MHz 8 pF Collector input capacitance C ibo VEB=-2.0V,IC=0,f=1MHz 30 pF Turn-on time t on VCC=-30V,IC=-150mA, IB1=-15mA 45 nS Delay time t d 10 nS Rise time t r 40 nS Turn-off time t off VCC=-6.0V,IC=-150mA, IB1=IB2=-15mA 100 nS Storage time t s 80 nS Fall time t f 30 nS

PNP Silicon Epitaxial Planar Transistor MMST2907A F050 www.gmicroelec.com R e v . A 3 PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOLDERING FOOTPRINT Unit : mm

PACKAGE INFORMATION

MMST2907A SOT-323 3000/Tape&Reel SOT-323 Dim Min Max A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.30 Typical E 0.25 0.40 G 1.2 1.4 H 0.02 0.10 J 0.10 Typical K 2.20 2.40 All Dimensions in mm 1.90 0.650.65 0.90 0.70 A B K D E J H G C