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WEJ ELECTRONIC CO.,LTD 2. 30¡ À0. 05 1. 25¡ À0. 05 À . 3 0 2 . À R E F MMST2222A TRANSISTOR (NPN)
FEATURES
P CM: 0 . 2 W ( T a m b = 2 5 ℃ ) Collector current I CM: 0 . 6 A Collector-base voltage V (BR)CBO: 7 5 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, I B=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO V CB=70V, IE=0 0. 1 µA Collector cut-off current ICEO V CE=35V, IB=0 0. 1 µA Emitter cut-off current IEBO V EB= 3V, IC=0 0. 1 µA hFE(1) V CE=10V, IC= 150mA 100 300 DC current gain hFE(2) V CE=10V, IC= 1mA 50 Collector-emitter saturation voltage VCE(sat) I C=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) I C=500 mA, IB= 50mA 1.2 V Transition frequency fT VCE=20V, IC= 20mA f=100MHz
300 MHz
VCB=10V, IE= 0 f=1MHz 8 pF Delay time td 10 nS Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V, IB1=15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1= IB2= 15mA 60 nS Marking K3P U n i t : m m SOT-323 1. BASE 2. EMITTER 3. COLLECTOR MMST2222A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS